GB1146230A - Apparatus for causing a rod of crystalline material to grow - Google Patents

Apparatus for causing a rod of crystalline material to grow

Info

Publication number
GB1146230A
GB1146230A GB59230/67A GB5923067A GB1146230A GB 1146230 A GB1146230 A GB 1146230A GB 59230/67 A GB59230/67 A GB 59230/67A GB 5923067 A GB5923067 A GB 5923067A GB 1146230 A GB1146230 A GB 1146230A
Authority
GB
United Kingdom
Prior art keywords
rod
supply
grown
seed
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB59230/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1146230A publication Critical patent/GB1146230A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,146,230. Zone-melting. SIEMENS A.G. 29 Dec., 1967 [30 Dec., 1966], No. 59230/67. Heading BIS. A rod is grown from a molten zone fed by at least two side-by-side supply rods and heated by induction, the degree of heating being more intense between the axes of the supply rods than outside them and the grown rod being concave at the solid/liquid interface. A molten zone may initially be formed between one supply rod and a thin seed, bridging to the second supply rod being effected as growing proceeds by lateral shifting of the seed. Use of a thick seed obviates need for the lateral shifting. The heating means may comprise two outwardly curving hairpin-like members 7 and 8 between the supply rods, the members being in series (Fig. 3), in parallel, or separate with a pancake coil in between. Alternatively, the heating means may comprise three loops 11, 12 and 13 in series (Fig. 4a) and b; or three separate coils. The rod may be grown downwards (as shown) or upwards.
GB59230/67A 1966-12-30 1967-12-29 Apparatus for causing a rod of crystalline material to grow Expired GB1146230A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0107671 1966-12-30

Publications (1)

Publication Number Publication Date
GB1146230A true GB1146230A (en) 1969-03-19

Family

ID=7528285

Family Applications (1)

Application Number Title Priority Date Filing Date
GB59230/67A Expired GB1146230A (en) 1966-12-30 1967-12-29 Apparatus for causing a rod of crystalline material to grow

Country Status (5)

Country Link
US (1) US3622282A (en)
BE (1) BE708669A (en)
DE (1) DE1519908A1 (en)
GB (1) GB1146230A (en)
NL (1) NL6715502A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
DE2538812A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD OF DOPING SEMICONDUCTOR RODS

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US3014791A (en) * 1958-10-01 1961-12-26 Merck & Co Inc Pyrolysis apparatus
DE1243641B (en) * 1962-12-12 1967-07-06 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
DE1208292B (en) * 1963-03-29 1966-01-05 Siemens Ag Device for crucible-free zone melting of semiconductor material
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
DE1296132B (en) * 1965-03-19 1969-05-29 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material

Also Published As

Publication number Publication date
BE708669A (en) 1968-06-28
NL6715502A (en) 1968-07-01
DE1519908A1 (en) 1970-07-02
US3622282A (en) 1971-11-23

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