GB1146230A - Apparatus for causing a rod of crystalline material to grow - Google Patents
Apparatus for causing a rod of crystalline material to growInfo
- Publication number
- GB1146230A GB1146230A GB59230/67A GB5923067A GB1146230A GB 1146230 A GB1146230 A GB 1146230A GB 59230/67 A GB59230/67 A GB 59230/67A GB 5923067 A GB5923067 A GB 5923067A GB 1146230 A GB1146230 A GB 1146230A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- supply
- grown
- seed
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- General Induction Heating (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,146,230. Zone-melting. SIEMENS A.G. 29 Dec., 1967 [30 Dec., 1966], No. 59230/67. Heading BIS. A rod is grown from a molten zone fed by at least two side-by-side supply rods and heated by induction, the degree of heating being more intense between the axes of the supply rods than outside them and the grown rod being concave at the solid/liquid interface. A molten zone may initially be formed between one supply rod and a thin seed, bridging to the second supply rod being effected as growing proceeds by lateral shifting of the seed. Use of a thick seed obviates need for the lateral shifting. The heating means may comprise two outwardly curving hairpin-like members 7 and 8 between the supply rods, the members being in series (Fig. 3), in parallel, or separate with a pancake coil in between. Alternatively, the heating means may comprise three loops 11, 12 and 13 in series (Fig. 4a) and b; or three separate coils. The rod may be grown downwards (as shown) or upwards.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0107671 | 1966-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1146230A true GB1146230A (en) | 1969-03-19 |
Family
ID=7528285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB59230/67A Expired GB1146230A (en) | 1966-12-30 | 1967-12-29 | Apparatus for causing a rod of crystalline material to grow |
Country Status (5)
Country | Link |
---|---|
US (1) | US3622282A (en) |
BE (1) | BE708669A (en) |
DE (1) | DE1519908A1 (en) |
GB (1) | GB1146230A (en) |
NL (1) | NL6715502A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4072556A (en) * | 1969-11-29 | 1978-02-07 | Siemens Aktiengesellschaft | Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same |
DE2538812A1 (en) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | METHOD OF DOPING SEMICONDUCTOR RODS |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
US3014791A (en) * | 1958-10-01 | 1961-12-26 | Merck & Co Inc | Pyrolysis apparatus |
DE1243641B (en) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
DE1208292B (en) * | 1963-03-29 | 1966-01-05 | Siemens Ag | Device for crucible-free zone melting of semiconductor material |
DE1224273B (en) * | 1964-06-23 | 1966-09-08 | Siemens Ag | Device for crucible-free zone melting |
DE1296132B (en) * | 1965-03-19 | 1969-05-29 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
DE1619996A1 (en) * | 1967-03-18 | 1971-07-08 | Siemens Ag | Method for producing a single-crystal rod, in particular from semiconductor material |
-
1966
- 1966-12-30 DE DE19661519908 patent/DE1519908A1/en active Pending
-
1967
- 1967-11-15 NL NL6715502A patent/NL6715502A/xx unknown
- 1967-12-19 US US691778A patent/US3622282A/en not_active Expired - Lifetime
- 1967-12-28 BE BE708669D patent/BE708669A/xx unknown
- 1967-12-29 GB GB59230/67A patent/GB1146230A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1519908A1 (en) | 1970-07-02 |
NL6715502A (en) | 1968-07-01 |
US3622282A (en) | 1971-11-23 |
BE708669A (en) | 1968-06-28 |
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