GB1187625A - Crucible-Free Zone-by-Zone Melting of Crystalline Rods - Google Patents

Crucible-Free Zone-by-Zone Melting of Crystalline Rods

Info

Publication number
GB1187625A
GB1187625A GB43595/67A GB4359567A GB1187625A GB 1187625 A GB1187625 A GB 1187625A GB 43595/67 A GB43595/67 A GB 43595/67A GB 4359567 A GB4359567 A GB 4359567A GB 1187625 A GB1187625 A GB 1187625A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
supply
rods
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43595/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1187625A publication Critical patent/GB1187625A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,187,625. Zone-melting. SIEMENS A.G. 25 Sept., 1967 [28 Sept, 1966], No. 43595/67. Heading B1S. A monocrystalline rod 6 of silicon is formed on a seed 2 from a molten zone 5 heated by an induction coil 3 and fed by an offset supply rod 1, rods 1 and 6 both being rotated, preferably in the same direction. The supply rod is moved to the offset position when, at the beginning of the process, the diameter of the recrystallizing rod reaches the desired value. The distance between the axes of the supply and product rods may equal the radius of the product rod. The rotation of the supply rod may be reciprocatory. The supply rod may be periodically reciprocated or eccentrically rotated at an amplitude equal to half the radius of the product rod.
GB43595/67A 1966-09-28 1967-09-25 Crucible-Free Zone-by-Zone Melting of Crystalline Rods Expired GB1187625A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106159 1966-09-28

Publications (1)

Publication Number Publication Date
GB1187625A true GB1187625A (en) 1970-04-08

Family

ID=7527178

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43595/67A Expired GB1187625A (en) 1966-09-28 1967-09-25 Crucible-Free Zone-by-Zone Melting of Crystalline Rods

Country Status (6)

Country Link
US (1) US3594132A (en)
BE (1) BE704264A (en)
DE (1) DE1544302C3 (en)
DK (1) DK135153B (en)
GB (1) GB1187625A (en)
NL (1) NL6710203A (en)

Also Published As

Publication number Publication date
DK135153C (en) 1977-08-22
DE1544302A1 (en) 1970-03-19
DE1544302C3 (en) 1973-10-18
BE704264A (en) 1968-03-25
DK135153B (en) 1977-03-14
NL6710203A (en) 1968-03-29
US3594132A (en) 1971-07-20
DE1544302B2 (en) 1973-03-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee