GB1012998A - Zone-by-zone melting of a rod of semiconductor material - Google Patents

Zone-by-zone melting of a rod of semiconductor material

Info

Publication number
GB1012998A
GB1012998A GB28882/64A GB2888264A GB1012998A GB 1012998 A GB1012998 A GB 1012998A GB 28882/64 A GB28882/64 A GB 28882/64A GB 2888264 A GB2888264 A GB 2888264A GB 1012998 A GB1012998 A GB 1012998A
Authority
GB
United Kingdom
Prior art keywords
zone
rod
melting
polycrystalline
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28882/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1012998A publication Critical patent/GB1012998A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

1,012,998. Zone-melting. SIEMENS-SCHUCKERTWERKE A.G. July 13, 1964 [July 13, 1963], No. 28882/64. Heading BIS. A molten zone is passed upwards through a polycrystalline rod from a thinner monocrystalline rod with simultaneous stretching, the molten zone being produced by an induction coil of smaller internal diameter than the polycrystalline rod. The induction coil may be flat (Fig. 1) or funnel shaped (Fig. 2, not shown). The polycrystalline material may be deposited from the gas phase. The thick and thin rods may have diameters of 40 and 20 mm. respectively. The distance between the lower rod holder and the coil may be increased at a speed of 3-6 mm./min.
GB28882/64A 1963-07-13 1964-07-13 Zone-by-zone melting of a rod of semiconductor material Expired GB1012998A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0086157 1963-07-13
DES0099116 1965-08-28

Publications (1)

Publication Number Publication Date
GB1012998A true GB1012998A (en) 1965-12-15

Family

ID=25997302

Family Applications (2)

Application Number Title Priority Date Filing Date
GB28882/64A Expired GB1012998A (en) 1963-07-13 1964-07-13 Zone-by-zone melting of a rod of semiconductor material
GB38719/66A Expired GB1084930A (en) 1963-07-13 1966-08-30 Zone-by-zone melting of a rod of semi-conductor material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB38719/66A Expired GB1084930A (en) 1963-07-13 1966-08-30 Zone-by-zone melting of a rod of semi-conductor material

Country Status (6)

Country Link
US (1) US3563810A (en)
BE (2) BE650386A (en)
CH (1) CH407959A (en)
DE (2) DE1719021B1 (en)
DK (1) DK112794B (en)
GB (2) GB1012998A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639567A (en) * 1984-09-12 1987-01-27 Leybold-Heraeus Gmbh Method and apparatus for melting rod-shaped material with an induction coil

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (en) * 1983-04-08 1984-10-29 Hitachi Ltd Method and apparatus for production of semiconductor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
NL252060A (en) * 1959-05-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639567A (en) * 1984-09-12 1987-01-27 Leybold-Heraeus Gmbh Method and apparatus for melting rod-shaped material with an induction coil

Also Published As

Publication number Publication date
BE685925A (en) 1967-02-24
BE650386A (en) 1965-01-11
DE1519879B2 (en) 1973-08-16
US3563810A (en) 1971-02-16
CH407959A (en) 1966-02-28
GB1084930A (en) 1967-09-27
DE1519879C3 (en) 1974-05-09
DE1719021B1 (en) 1969-09-11
DE1519879A1 (en) 1970-02-26
DK112794B (en) 1969-01-20

Similar Documents

Publication Publication Date Title
GB1157241A (en) Reel for Rod or Wire
GB908951A (en) Production of semiconductors and the like
GB1102989A (en) Method and apparatus for producing crystalline semiconductor ribbon
GB916390A (en) Method of drawing a semi-conductor rod from a melt
GB1430883A (en) Non-crucible zone melting of crystalline semiconductor rods
GB1157224A (en) Semiconductor Crystal Growing
GB1022427A (en) An apparatus for zone-by-zone melting a rod of crystalline material
GB1216522A (en) Zone-by-zone melting a rod
GB1012998A (en) Zone-by-zone melting of a rod of semiconductor material
GB1029804A (en) A process for producing a substantially monocrystalline rod of semiconductor material
GB1034503A (en) Improvements in or relating to the production of crystalline material
GB995399A (en) Improvements in or relating to the refining of semiconductor materials
GB1175449A (en) Crucible-Free Zone-by-Zone Melting Operations
GB1045664A (en) A process for melting a rod of polycrystalline material zone-by-zone
GB1075706A (en) Production of dislocation-free single crystals of semiconductor material
GB1081827A (en) Improvements in or relating to a floating zone process
GB1081600A (en) A method of melting a rod of crystalline material zone-by-zone
GB1375132A (en)
GB894739A (en) Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting
GB1007909A (en) A process for zone-by-zone melting of a rod of crystalline material
GB906485A (en) Improvements in the production of mono-crystalline semiconductor material
GB926497A (en) A process for producing a monocrystal from a polycrystalline rod of silicon
GB1006034A (en) A method of producing a rod of semi-conductor material
GB1013064A (en) Process for drawing a crystalline semiconductor body from a melt
GB904422A (en) Device for cutting off fixed quantities or lumps from a mass of molten glass