GB1084930A - Zone-by-zone melting of a rod of semi-conductor material - Google Patents

Zone-by-zone melting of a rod of semi-conductor material

Info

Publication number
GB1084930A
GB1084930A GB38719/66A GB3871966A GB1084930A GB 1084930 A GB1084930 A GB 1084930A GB 38719/66 A GB38719/66 A GB 38719/66A GB 3871966 A GB3871966 A GB 3871966A GB 1084930 A GB1084930 A GB 1084930A
Authority
GB
United Kingdom
Prior art keywords
zone
rod
semi
thin
molten zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38719/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1084930A publication Critical patent/GB1084930A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Abstract

In the passage of a molten zone upwards through a thick polycrystalline rod (4) from a thin monocrystalline rod (5) with simultaneous stretching, the molten zone (3) being produced by an induction coil (2) having an inner diameter between that of the thick and thin rods, an electrically heated radiation member (7) encircles the thin rod below the molten zone to effect annealing. The ratio of the two rods may be 1.5-7. The induction coil may be of flat or truncated cone form.
GB38719/66A 1963-07-13 1966-08-30 Zone-by-zone melting of a rod of semi-conductor material Expired GB1084930A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0086157 1963-07-13
DES0099116 1965-08-28

Publications (1)

Publication Number Publication Date
GB1084930A true GB1084930A (en) 1967-09-27

Family

ID=25997302

Family Applications (2)

Application Number Title Priority Date Filing Date
GB28882/64A Expired GB1012998A (en) 1963-07-13 1964-07-13 Zone-by-zone melting of a rod of semiconductor material
GB38719/66A Expired GB1084930A (en) 1963-07-13 1966-08-30 Zone-by-zone melting of a rod of semi-conductor material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB28882/64A Expired GB1012998A (en) 1963-07-13 1964-07-13 Zone-by-zone melting of a rod of semiconductor material

Country Status (6)

Country Link
US (1) US3563810A (en)
BE (2) BE650386A (en)
CH (1) CH407959A (en)
DE (2) DE1719021B1 (en)
DK (1) DK112794B (en)
GB (2) GB1012998A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3433458A1 (en) * 1984-09-12 1986-03-20 Leybold-Heraeus GmbH, 5000 Köln METHOD AND DEVICE FOR MELTING ROD-SHAPED MATERIAL BY MEANS OF AN INDUCTION COIL

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
NL252060A (en) * 1959-05-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor

Also Published As

Publication number Publication date
GB1012998A (en) 1965-12-15
DE1519879C3 (en) 1974-05-09
DE1519879A1 (en) 1970-02-26
US3563810A (en) 1971-02-16
BE650386A (en) 1965-01-11
DK112794B (en) 1969-01-20
DE1719021B1 (en) 1969-09-11
BE685925A (en) 1967-02-24
DE1519879B2 (en) 1973-08-16
CH407959A (en) 1966-02-28

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