GB986748A - Zone-by-zone melting of a rod of semi-conductor material - Google Patents

Zone-by-zone melting of a rod of semi-conductor material

Info

Publication number
GB986748A
GB986748A GB10592/64A GB1059264A GB986748A GB 986748 A GB986748 A GB 986748A GB 10592/64 A GB10592/64 A GB 10592/64A GB 1059264 A GB1059264 A GB 1059264A GB 986748 A GB986748 A GB 986748A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
melting
coil
induction coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10592/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB986748A publication Critical patent/GB986748A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • General Induction Heating (AREA)

Abstract

986,748. Zone - melting. SIEMENSSCHUCKERTWERKE A.G. March 12, 1964 [March 29, 1963], No. 10592/64. -Heading BIS. In the floating zone-melting of a rod 2 of silicon by means of an induction coil 5, a small temperature gradient across the molten zone is produced by means of a second induction coil 7 comprising two turns of elongated shape, one each side of rod 2. The second coil may heat the rod each side of the molten zone to 1100- 1200 ‹C. The rod may be preheated by radiation. Passage of the molten zone may be effected by moving rod 2 or coil 5 only. The lower end of rod 2 may be rotated. The process may be carried out in a vacuum or protective atmosphere. Afterwards, the whole rod may be rotated and cooled to 600 ‹C. over 20 minutes by reducing the heating energy of the second induction coil.
GB10592/64A 1963-03-29 1964-03-12 Zone-by-zone melting of a rod of semi-conductor material Expired GB986748A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES84442A DE1208292B (en) 1963-03-29 1963-03-29 Device for crucible-free zone melting of semiconductor material
DES91638A DE1230763B (en) 1963-03-29 1964-06-20 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB986748A true GB986748A (en) 1965-03-24

Family

ID=25997180

Family Applications (2)

Application Number Title Priority Date Filing Date
GB10592/64A Expired GB986748A (en) 1963-03-29 1964-03-12 Zone-by-zone melting of a rod of semi-conductor material
GB24064/65A Expired GB1035090A (en) 1963-03-29 1965-06-04 Zone-by-zone melting of semi-conductor material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB24064/65A Expired GB1035090A (en) 1963-03-29 1965-06-04 Zone-by-zone melting of semi-conductor material

Country Status (6)

Country Link
US (1) US3271115A (en)
BE (2) BE645736A (en)
CH (1) CH416558A (en)
DE (2) DE1208292B (en)
FR (2) FR1431669A (en)
GB (2) GB986748A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1275996B (en) * 1965-07-10 1968-08-29 Siemens Ag Device for crucible-free zone melting
US3432753A (en) * 1966-09-30 1969-03-11 Gen Electric Method of analyzing materials to determine the impurity content thereof
DE1519908A1 (en) * 1966-12-30 1970-07-02 Siemens Ag Device for producing a crystalline rod by zone melting without a crucible
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
US3848107A (en) * 1973-12-26 1974-11-12 Park Ohio Industries Inc Inductor for heating elongated metal workpieces
DE2538854B2 (en) * 1975-09-01 1979-02-15 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Single-turn induction heating coil for crucible-free zone melting
US4501943A (en) * 1983-09-19 1985-02-26 Gnb Batteries Inc. Apparatus and method for fusing battery terminals with improved induction heating power control
EP0292920B1 (en) * 1987-05-25 1992-07-29 Shin-Etsu Handotai Company Limited Rf induction heating apparatus
ATE185464T1 (en) * 1993-08-26 1999-10-15 Inductotherm Corp INDUCTION MELTING FURNACE WITH MAGNETIC SUSPENSION

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419116A (en) * 1944-04-20 1947-04-15 Westinghouse Electric Corp Apparatus for high-frequency induction heating of strips
US2708704A (en) * 1952-04-23 1955-05-17 Lindberg Eng Co Electric heating coil structure
DE1062847B (en) * 1955-08-04 1959-08-06 Friedrich Kocks Dr Ing Inductor for heating the edges of flat sheets or strips
US2935386A (en) * 1956-01-03 1960-05-03 Clevite Corp Method of producing small semiconductor silicon crystals
DE1045011B (en) * 1956-03-15 1958-11-27 Asea Ab Single-phase cross-field furnace for inductive heating of workpieces
NL126240C (en) * 1958-02-19
US2990259A (en) * 1959-09-03 1961-06-27 Paul L Moody Syringe-type single-crystal furnace
US3101400A (en) * 1961-02-23 1963-08-20 Induction Heating Corp Hardening coil and method of heat treatment of toothed metal strips

Also Published As

Publication number Publication date
DE1208292B (en) 1966-01-05
BE645736A (en) 1964-09-28
US3271115A (en) 1966-09-06
DE1230763B (en) 1966-12-22
GB1035090A (en) 1966-07-06
FR88198E (en) 1966-12-23
CH416558A (en) 1966-07-15
FR1431669A (en) 1966-03-18
BE665626A (en) 1965-12-20

Similar Documents

Publication Publication Date Title
GB986748A (en) Zone-by-zone melting of a rod of semi-conductor material
GB692094A (en) Methods of heat treating germanium material
SE8004717L (en) SET TO MAKE AN AMORPH, MAGNETIC ALLOY
GB904100A (en) A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
ES333345A1 (en) A method of fabrication of flat glass. (Machine-translation by Google Translate, not legally binding)
GB1034503A (en) Improvements in or relating to the production of crystalline material
GB876466A (en) A method of heat-treating a rod of semi-conductor material
CH421911A (en) Process for crucible-free melt zone treatment of a rod made of crystalline semiconductor material, induction heating coil arrangement for carrying out the process and silicon rod produced by this process
GB1081600A (en) A method of melting a rod of crystalline material zone-by-zone
GB973754A (en) Improvements in or relating to moving-zone heat treatment of materials
GB1045526A (en) A method of zone-by-zone melting a rod of semiconductor material
GB1032071A (en) Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material
GB1358817A (en) None-crucible zone melting of rods of crystalline material
GB937190A (en) Process for the zone melting of rods of semi-conducting or conducting material
GB1084930A (en) Zone-by-zone melting of a rod of semi-conductor material
GB978539A (en) Improvements in and relating to the heat treatment of sintered metal permanent magnets
ES355118A1 (en) Method and apparatus for controlling temporary stresses during the formation of a glass ribbon from a molten pool
GB1214679A (en) Furnace for obtaining crystals by pulling from a melt
FR1026192A (en) Process for manufacturing heat exchangers and heat exchangers otenus in accordance with said process
GB989992A (en) The forming of crystalline structures in alnico alloy workpieces
GB876467A (en) Improvements in or relating to apparatus for use in melting a zone of a rod of semi-conductor material
GB903412A (en) Improvements in devices for use in crystal-pulling apparatus
GB1191166A (en) Zone Melting
GB1003974A (en) Improvements in or relating to methods of manufacturing objects of quartz glass
AT246353B (en) Method and apparatus for improving the thermal uniformity of molten glass