GB937190A - Process for the zone melting of rods of semi-conducting or conducting material - Google Patents

Process for the zone melting of rods of semi-conducting or conducting material

Info

Publication number
GB937190A
GB937190A GB10088/62A GB1008862A GB937190A GB 937190 A GB937190 A GB 937190A GB 10088/62 A GB10088/62 A GB 10088/62A GB 1008862 A GB1008862 A GB 1008862A GB 937190 A GB937190 A GB 937190A
Authority
GB
United Kingdom
Prior art keywords
coil
molten zone
conducting
amps
sec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10088/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB937190A publication Critical patent/GB937190A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0937190/III/1> In the production of a molten zone 2 in a rod 1 of silicon by means of an induction coil 3, additional induction coils 4 and 5 are used to support the molten zone, without increasing the heating effect of coil 3, so as to produce only a slight bulge in the molten zone. Coils 4 and 5 have the same frequency but produce fields of opposite directions. The height of molten zone 2 is greater than that of coil 3. The molten zone is preferably passed downwards through the rod. The diameter of the rod may be 18 mm. and the height of the molten zone may be 22 mm. The current in coil 3 may be 100 amps at 4 megacycles/sec., that in coil 4 may be 33 amps at 10 kilocycles/sec., and that in coil 5 may be 200 amps at 10 kilocycles/sec.
GB10088/62A 1961-03-17 1962-03-16 Process for the zone melting of rods of semi-conducting or conducting material Expired GB937190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES73019A DE1212051B (en) 1961-03-17 1961-03-17 Process for crucible zone melting of rods made of silicon

Publications (1)

Publication Number Publication Date
GB937190A true GB937190A (en) 1963-09-18

Family

ID=7503625

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10088/62A Expired GB937190A (en) 1961-03-17 1962-03-16 Process for the zone melting of rods of semi-conducting or conducting material

Country Status (6)

Country Link
US (1) US3179502A (en)
CH (1) CH430664A (en)
DE (1) DE1212051B (en)
FR (1) FR1317786A (en)
GB (1) GB937190A (en)
NL (1) NL274145A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1243642B (en) * 1963-04-27 1967-07-06 Siemens Ag Device for crucible-free zone melting of semiconductor material
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
DE3873173T2 (en) * 1987-05-25 1993-03-04 Shinetsu Handotai Kk DEVICE FOR HF INDUCTION HEATING.
US5427335A (en) * 1992-07-13 1995-06-27 The University Of Tennessee Research Corporation Method for producing extreme microgravity in extended volumes
DE10328859B4 (en) * 2003-06-20 2007-09-27 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Method and apparatus for pulling single crystals by zone pulling

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
NL206424A (en) * 1955-06-17
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus

Also Published As

Publication number Publication date
FR1317786A (en) 1963-05-08
US3179502A (en) 1965-04-20
CH430664A (en) 1967-02-28
NL274145A (en)
DE1212051B (en) 1966-03-10

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