GB931975A - Method of drawing monocrystalline semi-conductor rods - Google Patents

Method of drawing monocrystalline semi-conductor rods

Info

Publication number
GB931975A
GB931975A GB413062A GB413062A GB931975A GB 931975 A GB931975 A GB 931975A GB 413062 A GB413062 A GB 413062A GB 413062 A GB413062 A GB 413062A GB 931975 A GB931975 A GB 931975A
Authority
GB
United Kingdom
Prior art keywords
rod
diameter
rate
thin
induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB413062A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB931975A publication Critical patent/GB931975A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A thin monocrystalline rod 3 of semi-conductor material, e.g silicon, germanium or ferrite is pulled from a thicker rod 1 by zone-melting using an induction heating coil 26, the diameter of rod 3 being maintained constant by controlling the rate of feed of rod 1 to the molten zone. The rate of feed may be controlled so as to maintain constant the electrical conditions in the induction coil (as shown) or an electronic ring just below the induction coil. The electrical conditions in the induction coil are preferably maintained constant at a point on the high frequency coil current/parallel oscillatory circuit resonance frequency curve (Fig. 5, not shown) on the low frequency side of the current maximum. A thin rod having a diameter of 3 mm. may be produced from a thicker rod having a diameter of 15 mm. A finer degree of control of the diameter of rod 3 may be effected by also controlling the rate of pulling of rod 3 from the molten zone. The rate of pulling of rod 3 may be controlled so as to maintain constant the electrical conditions in a second induction coi (Fig. 3, not shown) or an annular electrod <PICT:0931975/III/1> (Fig. 4, not shown) about the boundary of the molten zone and the thin rod. The thin rod may be pulled downwards if a supporting field is employed. Specification 900,545 is referred to.
GB413062A 1961-02-07 1962-02-02 Method of drawing monocrystalline semi-conductor rods Expired GB931975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0072399 DE1259854B (en) 1961-02-07 1961-02-07 Method for crucible-free zone melting of a rod of semiconductor material held at its ends

Publications (1)

Publication Number Publication Date
GB931975A true GB931975A (en) 1963-07-24

Family

ID=7503165

Family Applications (1)

Application Number Title Priority Date Filing Date
GB413062A Expired GB931975A (en) 1961-02-07 1962-02-02 Method of drawing monocrystalline semi-conductor rods

Country Status (5)

Country Link
CH (1) CH409885A (en)
DE (1) DE1259854B (en)
GB (1) GB931975A (en)
NL (2) NL274321A (en)
SE (1) SE316152B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material
US3944640A (en) * 1970-09-02 1976-03-16 Arthur D. Little, Inc. Method for forming refractory fibers by laser energy
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material
US3944640A (en) * 1970-09-02 1976-03-16 Arthur D. Little, Inc. Method for forming refractory fibers by laser energy
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers

Also Published As

Publication number Publication date
CH409885A (en) 1966-03-31
DE1259854B (en) 1968-02-01
SE316152B (en) 1969-10-20
NL129916C (en)
NL274321A (en)

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