GB838770A - Improvements in method of growing semiconductor crystals - Google Patents

Improvements in method of growing semiconductor crystals

Info

Publication number
GB838770A
GB838770A GB41472/58A GB4147258A GB838770A GB 838770 A GB838770 A GB 838770A GB 41472/58 A GB41472/58 A GB 41472/58A GB 4147258 A GB4147258 A GB 4147258A GB 838770 A GB838770 A GB 838770A
Authority
GB
United Kingdom
Prior art keywords
disc
cylinder
globule
crystal
melted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41472/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB838770A publication Critical patent/GB838770A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A semi-conductor single crystal 16 (Fig. 1) is grown on a seed crystal 15 withdrawn from a molten globule 17 of material supported by a cylinder 18 of the same material that is slotted vertically (see Fig. 2) to prevent circumferential circulation of eddy currents. A disc 20 (Fig. 2) of the material is placed on the slotted cylinder 18 in an enclosure 1 (Fig. 1) which is evacuated, and disc 20 is heated by an acetylene torch applied to the outside of container 1 until the disc is sufficiently conductive. The disc 20 is then melted by an induction coil 4, the molten globule 17 being restrained on cylinder 18 by surface tension and/or electromagnetic levitation. As the crystal 16 is grown by raising the seed 15 on a rod 11, the coil 4 is gradually lowered and the globule 17 is replenished with material 18 melted by being in contact with molten mass 17. The material may be silicon or germanium, and may be of high purity or may contain acceptor or donor impurities. Specifications 727,900 and 752,457 are referred to. <PICT:0838770/III/1>
GB41472/58A 1957-12-27 1958-12-23 Improvements in method of growing semiconductor crystals Expired GB838770A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US705685A US2961305A (en) 1957-12-27 1957-12-27 Method of growing semiconductor crystals

Publications (1)

Publication Number Publication Date
GB838770A true GB838770A (en) 1960-06-22

Family

ID=24834518

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41472/58A Expired GB838770A (en) 1957-12-27 1958-12-23 Improvements in method of growing semiconductor crystals

Country Status (4)

Country Link
US (1) US2961305A (en)
DE (1) DE1207920B (en)
GB (1) GB838770A (en)
NL (1) NL234451A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL235481A (en) * 1958-02-19
US3041058A (en) * 1958-11-19 1962-06-26 Straumann Inst Ag Heat treatment apparatus
NL258961A (en) * 1959-12-23
US3279896A (en) * 1960-10-26 1966-10-18 Itt Crucible seal
BE613793A (en) * 1961-04-14
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE1519902C3 (en) * 1966-09-24 1975-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4324610A (en) * 1978-03-20 1982-04-13 Motorola, Inc. Method for the controlled melting of semiconductor bodies
DE4318184A1 (en) * 1993-06-01 1994-12-08 Wacker Chemitronic Method and appliance for pulling single crystals
JP2008156166A (en) * 2006-12-25 2008-07-10 Sumco Solar Corp Method for casting and cutting silicon ingot
US8536491B2 (en) 2009-03-24 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Rotatable and tunable heaters for semiconductor furnace
DK2504470T3 (en) 2009-11-24 2014-03-10 Forschungsverbund Berlin Ev A method and apparatus for producing single crystals of semiconductor material
DE102010040464A1 (en) 2010-09-09 2012-03-15 Wacker Chemie Ag Producing a dislocation-free monocrystalline silicon rod, comprises continuously melting a polycrystalline rod, inoculating the molten material with a monocrystalline seed crystal, and recrystallizing into a single crystal rod
RU182737U1 (en) * 2016-12-29 2018-08-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) Device for producing high-purity single crystal by zone melting
CN111115636B (en) * 2020-01-10 2022-09-30 昆明理工大学 Electromagnetic suspension coil and method for metallurgical-grade silicon electromagnetic suspension treatment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
BE525102A (en) * 1952-12-17 1900-01-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal

Also Published As

Publication number Publication date
DE1207920B (en) 1965-12-30
NL234451A (en)
US2961305A (en) 1960-11-22

Similar Documents

Publication Publication Date Title
GB838770A (en) Improvements in method of growing semiconductor crystals
GB829422A (en) Method and apparatus for producing semi-conductor materials of high purity
GB827465A (en) Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon
GB889058A (en) Improvements in or relating to the production of crystals
GB908951A (en) Production of semiconductors and the like
GB839783A (en) Improvements in growth of uniform composition semi-conductor crystals
GB778123A (en) Crystal production
GB916390A (en) Method of drawing a semi-conductor rod from a melt
GB827466A (en) Improvements in or relating to methods of and apparatus for manufacturing single crystals
GB908033A (en) Improvements in semiconductive wafers and methods of making the same
US3135585A (en) Method of growing dislocation-free semiconductor crystals
GB803830A (en) Semiconductor comprising silicon and method of making it
GB1029804A (en) A process for producing a substantially monocrystalline rod of semiconductor material
GB939102A (en) Improvements in and relating to the production of crystals, and apparatus for use therein
GB727447A (en) Formation of p-n junctions
GB1059960A (en) The production of semi-conductor rods
GB930432A (en) Improvements in or relating to methods of making bodies of semi-conductor material
GB1388286A (en) Monocrystalline materials
GB809486A (en) Method and apparatus for producing single-crystal semiconductor material
GB903412A (en) Improvements in devices for use in crystal-pulling apparatus
GB821663A (en) Improvements in silicon semiconductive devices
GB906485A (en) Improvements in the production of mono-crystalline semiconductor material
GB871156A (en) Improvements in or relating to growing monocrystals of semiconductor material
US3563810A (en) Method for reducing the cross section of semiconductor rods by molten-zone stretching
GB911360A (en) Process for growing crystals