GB809486A - Method and apparatus for producing single-crystal semiconductor material - Google Patents

Method and apparatus for producing single-crystal semiconductor material

Info

Publication number
GB809486A
GB809486A GB35318/56A GB3531856A GB809486A GB 809486 A GB809486 A GB 809486A GB 35318/56 A GB35318/56 A GB 35318/56A GB 3531856 A GB3531856 A GB 3531856A GB 809486 A GB809486 A GB 809486A
Authority
GB
United Kingdom
Prior art keywords
boat
zone
seed
single crystals
powdered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35318/56A
Inventor
Boyd Cornelison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to GB35318/56A priority Critical patent/GB809486A/en
Publication of GB809486A publication Critical patent/GB809486A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0809486/III/1> <PICT:0809486/III/2> Thin and flat segments of single crystal semi-conductor material are obtained by placing powdered semi-conductor material in elongated compartments 16a (Fig. 1) in a boat 10, in contact with a seed crystal placed in a space 18, producing a molten zone at the juncture of the powdered material and the seed crystal by means of a zone of heat, and moving the boat and the zone of heat relatively to each other to melt successive portions of the powdered material to grow single crystals from the seed. The compartments are formed by spacers 17 (Fig. 2) fitting into slots 15 in one end of the boat and into slots 16 in the bottom of the boat. The boat is drawn through a quartz tube surrounded by a localized heat source such as an induction coil, and an inert gas is passed through the tube. After cooling the several elongated single crystals are detached from the seed crystal. Impurity material of N or P type may be added to the molten zone at the junction of the powdered material and the seed before the single crystals are grown.
GB35318/56A 1956-11-19 1956-11-19 Method and apparatus for producing single-crystal semiconductor material Expired GB809486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB35318/56A GB809486A (en) 1956-11-19 1956-11-19 Method and apparatus for producing single-crystal semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35318/56A GB809486A (en) 1956-11-19 1956-11-19 Method and apparatus for producing single-crystal semiconductor material

Publications (1)

Publication Number Publication Date
GB809486A true GB809486A (en) 1959-02-25

Family

ID=10376358

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35318/56A Expired GB809486A (en) 1956-11-19 1956-11-19 Method and apparatus for producing single-crystal semiconductor material

Country Status (1)

Country Link
GB (1) GB809486A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1127785B (en) * 1960-05-06 1962-04-12 Schunk & Ebe Gmbh Charcoal and graphite molds for making semiconductors
DE1270471B (en) * 1965-01-05 1968-06-12 Philips Nv Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1127785B (en) * 1960-05-06 1962-04-12 Schunk & Ebe Gmbh Charcoal and graphite molds for making semiconductors
DE1270471B (en) * 1965-01-05 1968-06-12 Philips Nv Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon

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