GB809486A - Method and apparatus for producing single-crystal semiconductor material - Google Patents
Method and apparatus for producing single-crystal semiconductor materialInfo
- Publication number
- GB809486A GB809486A GB35318/56A GB3531856A GB809486A GB 809486 A GB809486 A GB 809486A GB 35318/56 A GB35318/56 A GB 35318/56A GB 3531856 A GB3531856 A GB 3531856A GB 809486 A GB809486 A GB 809486A
- Authority
- GB
- United Kingdom
- Prior art keywords
- boat
- zone
- seed
- single crystals
- powdered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0809486/III/1> <PICT:0809486/III/2> Thin and flat segments of single crystal semi-conductor material are obtained by placing powdered semi-conductor material in elongated compartments 16a (Fig. 1) in a boat 10, in contact with a seed crystal placed in a space 18, producing a molten zone at the juncture of the powdered material and the seed crystal by means of a zone of heat, and moving the boat and the zone of heat relatively to each other to melt successive portions of the powdered material to grow single crystals from the seed. The compartments are formed by spacers 17 (Fig. 2) fitting into slots 15 in one end of the boat and into slots 16 in the bottom of the boat. The boat is drawn through a quartz tube surrounded by a localized heat source such as an induction coil, and an inert gas is passed through the tube. After cooling the several elongated single crystals are detached from the seed crystal. Impurity material of N or P type may be added to the molten zone at the junction of the powdered material and the seed before the single crystals are grown.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB35318/56A GB809486A (en) | 1956-11-19 | 1956-11-19 | Method and apparatus for producing single-crystal semiconductor material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB35318/56A GB809486A (en) | 1956-11-19 | 1956-11-19 | Method and apparatus for producing single-crystal semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB809486A true GB809486A (en) | 1959-02-25 |
Family
ID=10376358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB35318/56A Expired GB809486A (en) | 1956-11-19 | 1956-11-19 | Method and apparatus for producing single-crystal semiconductor material |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB809486A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1127785B (en) * | 1960-05-06 | 1962-04-12 | Schunk & Ebe Gmbh | Charcoal and graphite molds for making semiconductors |
DE1270471B (en) * | 1965-01-05 | 1968-06-12 | Philips Nv | Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon |
-
1956
- 1956-11-19 GB GB35318/56A patent/GB809486A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1127785B (en) * | 1960-05-06 | 1962-04-12 | Schunk & Ebe Gmbh | Charcoal and graphite molds for making semiconductors |
DE1270471B (en) * | 1965-01-05 | 1968-06-12 | Philips Nv | Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon |
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