GB778123A - Crystal production - Google Patents

Crystal production

Info

Publication number
GB778123A
GB778123A GB29341/55A GB2934155A GB778123A GB 778123 A GB778123 A GB 778123A GB 29341/55 A GB29341/55 A GB 29341/55A GB 2934155 A GB2934155 A GB 2934155A GB 778123 A GB778123 A GB 778123A
Authority
GB
United Kingdom
Prior art keywords
crystal
block
melted
seed
crystal production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29341/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB778123A publication Critical patent/GB778123A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S164/00—Metal founding
    • Y10S164/04—Dental

Abstract

<PICT:0778123/III/1> In a method of fabricating a crystal a portion in the centre of one surface of a block 10 (Fig. 1), of material from which a crystal is to be made, is melted and a crystal is drawn from the melted portion by means of a seed crystal 11, the unmelted portion of the block 10 serving as a crucible for the melted portion. The block 10, which may be germanium or silicon, is situated under an evacuated bell jar 1, and a portion of the block is melted by high density electron beams 6 from a plurality of electron guns 5. The seed crystal 11 is attached to a reciprocable rod 3, and is slowly withdrawn upwardly to grow a crystal on the seed. U.S.A. Specification 2,491,462 is referred to.
GB29341/55A 1954-10-15 1955-10-14 Crystal production Expired GB778123A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US462427A US2858199A (en) 1954-10-15 1954-10-15 Crystal production

Publications (1)

Publication Number Publication Date
GB778123A true GB778123A (en) 1957-07-03

Family

ID=23836385

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29341/55A Expired GB778123A (en) 1954-10-15 1955-10-14 Crystal production

Country Status (3)

Country Link
US (1) US2858199A (en)
BE (1) BE542056A (en)
GB (1) GB778123A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162766A (en) * 1984-07-20 1986-02-12 Wedtech Corp Methods of and apparatus for the melting of silicon

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2997760A (en) * 1957-06-10 1961-08-29 Stauffer Chemical Co Continous vaccum casting process
NL110575C (en) * 1958-01-17 1965-02-15 Philips Nv
DE1110877B (en) * 1959-04-24 1961-07-13 Heraeus Gmbh W C Process for melting metal blocks using electron beams
US3115469A (en) * 1959-06-22 1963-12-24 Monsanto Chemicals Production of single crystals of ferrites
GB963843A (en) * 1960-08-22 1964-07-15 Ass Elect Ind Improvements relating to zone melting by electron beam furnaces
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
US3237254A (en) * 1962-06-26 1966-03-01 Stauffer Chemical Co Vacuum casting
DE1191054B (en) * 1962-09-08 1965-04-15 Balzers Vakuum G M B H High power electron beam device
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1243641B (en) * 1962-12-12 1967-07-06 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
DE1208739B (en) * 1963-12-17 1966-01-13 Ibm Deutschland Process for pulling single crystal silicon carbide
DE1218412B (en) * 1964-04-29 1966-06-08 Siemens Ag Process for the production of single crystal semiconductor material
GB1227331A (en) * 1967-04-14 1971-04-07
US3494804A (en) * 1968-07-15 1970-02-10 Air Reduction Method for growing crystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4602979A (en) * 1982-10-15 1986-07-29 The United States Of America As Represented By The Secretary Of The Air Force Technique for the growth of compositionally ungraded single crystals of solid solutions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US1580199A (en) * 1924-09-02 1926-04-13 Hering Carl Process of making fibrous material
US2128581A (en) * 1936-05-18 1938-08-30 Farnsworth Television Inc Fine beam electron gun
IT380674A (en) * 1939-02-22
US2472303A (en) * 1946-06-10 1949-06-07 Brush Dev Co Method of growing crystals
US2468761A (en) * 1946-07-05 1949-05-03 Brush Dev Co Method of growing p-type seed crystals
US2647043A (en) * 1948-09-23 1953-07-28 Imber Oscar Crystal growing apparatus
BE500569A (en) * 1950-01-13
US2674520A (en) * 1950-04-11 1954-04-06 Clevite Corp Apparatus for growing single crystals of quartz
DE895474C (en) * 1951-09-08 1953-11-02 Licentia Gmbh Process for melting highly purified substances

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162766A (en) * 1984-07-20 1986-02-12 Wedtech Corp Methods of and apparatus for the melting of silicon

Also Published As

Publication number Publication date
BE542056A (en)
US2858199A (en) 1958-10-28

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