GB915881A - A process for producing a monocrystalline rod of semi-conductor material - Google Patents

A process for producing a monocrystalline rod of semi-conductor material

Info

Publication number
GB915881A
GB915881A GB1054660A GB1054660A GB915881A GB 915881 A GB915881 A GB 915881A GB 1054660 A GB1054660 A GB 1054660A GB 1054660 A GB1054660 A GB 1054660A GB 915881 A GB915881 A GB 915881A
Authority
GB
United Kingdom
Prior art keywords
rod
seed
point
semi
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1054660A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB915881A publication Critical patent/GB915881A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0915881/III/1> In the production of a monocrystalline rod, e.g. of silicon, by the passage of a molten zone a plurality of times through a polycrystalline rod having a monocrystalline rod fused thereto, one of the passes starts from a point in the seed and subsequent passes start from the point of fusion, with the optional exception of the last, which may start from within the rod. The pass starting from within the seed may be in the first four and is preferably the second at a distance of at least 2 cm. from the point of fusion. As shown, a seed 11 is held in a rotatable ceramic cylinder 14 by means of a number of resilient molybdenum strips 13 and a molten zone is formed by a water-cooled pancake coil 18. Specification 915,882 is referred to.
GB1054660A 1959-06-20 1960-03-24 A process for producing a monocrystalline rod of semi-conductor material Expired GB915881A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63538A DE1080973B (en) 1959-06-20 1959-06-20 Process for the production of monocrystalline semiconductor material

Publications (1)

Publication Number Publication Date
GB915881A true GB915881A (en) 1963-01-16

Family

ID=7496450

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1054660A Expired GB915881A (en) 1959-06-20 1960-03-24 A process for producing a monocrystalline rod of semi-conductor material

Country Status (5)

Country Link
CH (1) CH385498A (en)
DE (1) DE1080973B (en)
FR (1) FR1245238A (en)
GB (1) GB915881A (en)
NL (2) NL246700A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182207B (en) * 1962-07-20 1964-11-26 Siemens Ag Method for producing a low-dislocation semiconductor single crystal by crucible-free zone melting
DE3322629A1 (en) * 1983-06-23 1985-01-03 Siemens AG, 1000 Berlin und 8000 München Floating-zone melting apparatus

Also Published As

Publication number Publication date
NL246700A (en)
CH385498A (en) 1964-12-15
FR1245238A (en) 1960-11-04
DE1080973B (en) 1960-05-05
NL108941C (en)

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