FR1269376A - Process for preparing a high purity silicon carbide - Google Patents

Process for preparing a high purity silicon carbide

Info

Publication number
FR1269376A
FR1269376A FR833066A FR833066A FR1269376A FR 1269376 A FR1269376 A FR 1269376A FR 833066 A FR833066 A FR 833066A FR 833066 A FR833066 A FR 833066A FR 1269376 A FR1269376 A FR 1269376A
Authority
FR
France
Prior art keywords
preparing
silicon carbide
high purity
purity silicon
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR833066A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DEW26031A external-priority patent/DE1226088B/en
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to FR833066A priority Critical patent/FR1269376A/en
Application granted granted Critical
Publication of FR1269376A publication Critical patent/FR1269376A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
FR833066A 1959-07-17 1960-07-15 Process for preparing a high purity silicon carbide Expired FR1269376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR833066A FR1269376A (en) 1959-07-17 1960-07-15 Process for preparing a high purity silicon carbide

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEW26031A DE1226088B (en) 1959-07-17 1959-07-17 Process for the production of high purity crystalline silicon carbide
FR833066A FR1269376A (en) 1959-07-17 1960-07-15 Process for preparing a high purity silicon carbide

Publications (1)

Publication Number Publication Date
FR1269376A true FR1269376A (en) 1961-08-11

Family

ID=26002297

Family Applications (1)

Application Number Title Priority Date Filing Date
FR833066A Expired FR1269376A (en) 1959-07-17 1960-07-15 Process for preparing a high purity silicon carbide

Country Status (1)

Country Link
FR (1) FR1269376A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1979000178A1 (en) * 1977-10-04 1979-04-05 Carborundum Co Process and installation for producing silicon carbide with a very high purity
JPS56500008A (en) * 1978-12-21 1981-01-08
FR2666799A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Preparation of silicon carbide by a gas route in the presence of an additive
FR2666797A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1979000178A1 (en) * 1977-10-04 1979-04-05 Carborundum Co Process and installation for producing silicon carbide with a very high purity
JPS56500008A (en) * 1978-12-21 1981-01-08
FR2666799A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Preparation of silicon carbide by a gas route in the presence of an additive
FR2666797A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide

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