FR1282688A - Process for preparing silicon carbide crystals - Google Patents

Process for preparing silicon carbide crystals

Info

Publication number
FR1282688A
FR1282688A FR847057A FR847057A FR1282688A FR 1282688 A FR1282688 A FR 1282688A FR 847057 A FR847057 A FR 847057A FR 847057 A FR847057 A FR 847057A FR 1282688 A FR1282688 A FR 1282688A
Authority
FR
France
Prior art keywords
silicon carbide
preparing silicon
carbide crystals
crystals
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR847057A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR847057A priority Critical patent/FR1282688A/en
Application granted granted Critical
Publication of FR1282688A publication Critical patent/FR1282688A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
FR847057A 1960-12-15 1960-12-15 Process for preparing silicon carbide crystals Expired FR1282688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR847057A FR1282688A (en) 1960-12-15 1960-12-15 Process for preparing silicon carbide crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR847057A FR1282688A (en) 1960-12-15 1960-12-15 Process for preparing silicon carbide crystals

Publications (1)

Publication Number Publication Date
FR1282688A true FR1282688A (en) 1962-01-27

Family

ID=8744846

Family Applications (1)

Application Number Title Priority Date Filing Date
FR847057A Expired FR1282688A (en) 1960-12-15 1960-12-15 Process for preparing silicon carbide crystals

Country Status (1)

Country Link
FR (1) FR1282688A (en)

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