FR1495043A - Process for the preparation of silicon carbide single crystals usable as semiconductors - Google Patents

Process for the preparation of silicon carbide single crystals usable as semiconductors

Info

Publication number
FR1495043A
FR1495043A FR74395A FR74395A FR1495043A FR 1495043 A FR1495043 A FR 1495043A FR 74395 A FR74395 A FR 74395A FR 74395 A FR74395 A FR 74395A FR 1495043 A FR1495043 A FR 1495043A
Authority
FR
France
Prior art keywords
semiconductors
preparation
silicon carbide
single crystals
carbide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR74395A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to FR74395A priority Critical patent/FR1495043A/en
Application granted granted Critical
Publication of FR1495043A publication Critical patent/FR1495043A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR74395A 1966-08-26 1966-08-26 Process for the preparation of silicon carbide single crystals usable as semiconductors Expired FR1495043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR74395A FR1495043A (en) 1966-08-26 1966-08-26 Process for the preparation of silicon carbide single crystals usable as semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR74395A FR1495043A (en) 1966-08-26 1966-08-26 Process for the preparation of silicon carbide single crystals usable as semiconductors

Publications (1)

Publication Number Publication Date
FR1495043A true FR1495043A (en) 1967-09-15

Family

ID=8616065

Family Applications (1)

Application Number Title Priority Date Filing Date
FR74395A Expired FR1495043A (en) 1966-08-26 1966-08-26 Process for the preparation of silicon carbide single crystals usable as semiconductors

Country Status (1)

Country Link
FR (1) FR1495043A (en)

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