CH516480A - Process for preparing silicon carbide filaments - Google Patents

Process for preparing silicon carbide filaments

Info

Publication number
CH516480A
CH516480A CH1257070A CH1257070A CH516480A CH 516480 A CH516480 A CH 516480A CH 1257070 A CH1257070 A CH 1257070A CH 1257070 A CH1257070 A CH 1257070A CH 516480 A CH516480 A CH 516480A
Authority
CH
Switzerland
Prior art keywords
silicon carbide
preparing silicon
carbide filaments
filaments
preparing
Prior art date
Application number
CH1257070A
Other languages
French (fr)
Inventor
Charles Stephen Robert
Arthur Lee Stephen
Frederick Cardy Charles
Georges Sampson Keith
Original Assignee
Laporte Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laporte Industries Ltd filed Critical Laporte Industries Ltd
Publication of CH516480A publication Critical patent/CH516480A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1257070A 1969-08-29 1970-08-21 Process for preparing silicon carbide filaments CH516480A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB43135/69A GB1280648A (en) 1969-08-29 1969-08-29 Refractory compounds

Publications (1)

Publication Number Publication Date
CH516480A true CH516480A (en) 1971-12-15

Family

ID=10427464

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1257070A CH516480A (en) 1969-08-29 1970-08-21 Process for preparing silicon carbide filaments

Country Status (6)

Country Link
AU (1) AU1903670A (en)
CA (1) CA922484A (en)
CH (1) CH516480A (en)
DE (1) DE2042813A1 (en)
FR (1) FR2059374A5 (en)
GB (1) GB1280648A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1275088A (en) * 1985-12-30 1990-10-09 Peter D. Shalek Prealloyed catalyst for growing silicon carbide whiskers
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
FI82231C (en) * 1988-11-30 1991-02-11 Kemira Oy FOERFARANDE FOER FRAMSTAELLNING AV KERAMRAOMATERIAL.

Also Published As

Publication number Publication date
DE2042813A1 (en) 1971-04-08
AU1903670A (en) 1972-02-24
FR2059374A5 (en) 1971-05-28
GB1280648A (en) 1972-07-05
CA922484A (en) 1973-03-13

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Legal Events

Date Code Title Description
PL Patent ceased