GB1280648A - Refractory compounds - Google Patents

Refractory compounds

Info

Publication number
GB1280648A
GB1280648A GB43135/69A GB4313569A GB1280648A GB 1280648 A GB1280648 A GB 1280648A GB 43135/69 A GB43135/69 A GB 43135/69A GB 4313569 A GB4313569 A GB 4313569A GB 1280648 A GB1280648 A GB 1280648A
Authority
GB
United Kingdom
Prior art keywords
silicon
source
fluorine
carbon
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43135/69A
Inventor
Robert Charles Stephen
Stephen Arthur Lee
Charles Frederick Cardy
Keith George Sampson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik LIL Ltd
Original Assignee
Laporte Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laporte Industries Ltd filed Critical Laporte Industries Ltd
Priority to GB43135/69A priority Critical patent/GB1280648A/en
Priority to AU19036/70A priority patent/AU1903670A/en
Priority to CH1257070A priority patent/CH516480A/en
Priority to CA091383A priority patent/CA922484A/en
Priority to FR7031502A priority patent/FR2059374A5/fr
Priority to DE19702042813 priority patent/DE2042813A1/en
Publication of GB1280648A publication Critical patent/GB1280648A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1280648 Silicon carbide whiskers LAPORTE INDUSTRIES Ltd 20 Aug 1970 [29 Aug 1969] 43135/69 Heading C1A Silicon carbide whiskers are prepared by reacting silicon or a silicon alloy with a gaseous source of fluorine at above 1050‹ C. and 100 mm. Hg and reacting the product thereof with a gaseous carbon-containing compound. Where a silicon alloy is used it preferably contains at least 50% Si and a refractory oxide e.g. alumina may be present with the silicon or silicon alloy. The fluroine source may be F 2 , HF, SiF 4 , CF 4 or fluorine compounds containing both carbon and silicon and may be diluted with e.g. H 2 or Ar. The gaseous carbon source may be CO or hydrocarbons, e.g. CH 4 , C 2 H 6 , C 3 H 8 , cyclohexane, benzene, toluene, xylene. The gaseous carbon source may be added with the fluorine source or after the silicon-fluorine source reaction, in the former case the carbon source and the fluorine source may provide a F : C ratio of 10 : 1 to 1 : 10. The temperature in the first reaction zone may be up to 1800‹ C. and in the SiC whisker forming zone may be at least 50‹ C. lower than in the first zone, suitably between 1000‹ and 1550‹ C. Deposition of SiC whiskers may be facilitated by provision of suitable substrates such as carbon, silicon carbide, alumina or mullite.
GB43135/69A 1969-08-29 1969-08-29 Refractory compounds Expired GB1280648A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB43135/69A GB1280648A (en) 1969-08-29 1969-08-29 Refractory compounds
AU19036/70A AU1903670A (en) 1969-08-29 1970-08-20 Refractory compounds
CH1257070A CH516480A (en) 1969-08-29 1970-08-21 Process for preparing silicon carbide filaments
CA091383A CA922484A (en) 1969-08-29 1970-08-24 Silicon carbide whiskers
FR7031502A FR2059374A5 (en) 1969-08-29 1970-08-28
DE19702042813 DE2042813A1 (en) 1969-08-29 1970-08-28 Process for the production of silicon carbide single crystals in whisker form

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB43135/69A GB1280648A (en) 1969-08-29 1969-08-29 Refractory compounds

Publications (1)

Publication Number Publication Date
GB1280648A true GB1280648A (en) 1972-07-05

Family

ID=10427464

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43135/69A Expired GB1280648A (en) 1969-08-29 1969-08-29 Refractory compounds

Country Status (6)

Country Link
AU (1) AU1903670A (en)
CA (1) CA922484A (en)
CH (1) CH516480A (en)
DE (1) DE2042813A1 (en)
FR (1) FR2059374A5 (en)
GB (1) GB1280648A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
GB2227240A (en) * 1988-11-30 1990-07-25 Kemira Oy Silicon carbide or nitride

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1275088A (en) * 1985-12-30 1990-10-09 Peter D. Shalek Prealloyed catalyst for growing silicon carbide whiskers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
GB2227240A (en) * 1988-11-30 1990-07-25 Kemira Oy Silicon carbide or nitride
GB2227240B (en) * 1988-11-30 1992-05-20 Kemira Oy A process for producing silicon nitride or silicon carbide

Also Published As

Publication number Publication date
CA922484A (en) 1973-03-13
AU1903670A (en) 1972-02-24
CH516480A (en) 1971-12-15
DE2042813A1 (en) 1971-04-08
FR2059374A5 (en) 1971-05-28

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees