GB1280506A - Refractory compounds - Google Patents

Refractory compounds

Info

Publication number
GB1280506A
GB1280506A GB43138/69A GB4313869A GB1280506A GB 1280506 A GB1280506 A GB 1280506A GB 43138/69 A GB43138/69 A GB 43138/69A GB 4313869 A GB4313869 A GB 4313869A GB 1280506 A GB1280506 A GB 1280506A
Authority
GB
United Kingdom
Prior art keywords
carbon
halogen
source
silicon
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43138/69A
Inventor
Robert Charles Stephen
Stephen Arthur Lee
Charles Frederick Cardy
Keith George Sampson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik LIL Ltd
Original Assignee
Laporte Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laporte Industries Ltd filed Critical Laporte Industries Ltd
Priority to AU19037/70A priority Critical patent/AU1903770A/en
Priority to CA091567A priority patent/CA922485A/en
Priority to CH1277070A priority patent/CH529069A/en
Priority to DE19702042584 priority patent/DE2042584A1/en
Priority to FR7031503A priority patent/FR2059375A5/en
Publication of GB1280506A publication Critical patent/GB1280506A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)

Abstract

1280506 Silicon carbide whiskers LAPORTE INDUSTRIES Ltd 20 Aug 1970 [29 Aug 1969 (2)] 43136/69 and 43138/69 Heading C1A Silicon carbide whiskers are produced by reacting a gaseous source of halogen other than iodine with a solid silicon compound selected from silicon nitride, phosphide, boride or carbide, at 1380-1900‹ C. and at least 100 mm. of mercury and reacting the products thereof with a gaseous carbon-containing compound. Solid phase carbon may also be present. Specified halogen sources are the halogen itself, HF, HCl, SiF 4 , CCl 4 and SiCl 4 , which may be diluted with hydrogen or argon. The specified gaseous carbon sources are carbon monoxide or hydrocarbons such as CH 4 , C 2 H 6 , C 3 H 8 , CH 2 = CH 2 , CH#CH, cyclohexane, benzene, toluene and xylene. The hydrocarbon may be used to produce solid-phase carbon in situ. The gaseous carbon source may be present in the halogen source or may be added downstream of the silicon source. The carbon and halogen sources may be constituted by carbon halides. The ratio of halogen source to carbon source expressed as molar ratio of halogen to carbon may lie within the range 1 : 10 to 10 : 1. Alumina may be present with the silicon source. The temperature in the silicon carbide forming zone is preferably at least 50‹ C. lower than that in the reaction zone. Reference has been directed by the Comptroller to Specification 1,232,617.
GB43138/69A 1969-08-29 1969-08-29 Refractory compounds Expired GB1280506A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU19037/70A AU1903770A (en) 1969-08-29 1970-08-20 Refractory compounds
CA091567A CA922485A (en) 1969-08-29 1970-08-20 Silicon carbide whiskers
CH1277070A CH529069A (en) 1969-08-29 1970-08-26 Process for preparing silicon carbide filaments
DE19702042584 DE2042584A1 (en) 1969-08-29 1970-08-27 Process for the production of silicon carbide single crystals in whisker form
FR7031503A FR2059375A5 (en) 1969-08-29 1970-08-28 Silicon carbide monocrystal whiskers for - reinforcing plastics and metals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4313669 1969-08-29

Publications (1)

Publication Number Publication Date
GB1280506A true GB1280506A (en) 1972-07-05

Family

ID=10427468

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43138/69A Expired GB1280506A (en) 1969-08-29 1969-08-29 Refractory compounds

Country Status (1)

Country Link
GB (1) GB1280506A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees