GB988097A - Process for the manufacture of very pure silicon carbide - Google Patents

Process for the manufacture of very pure silicon carbide

Info

Publication number
GB988097A
GB988097A GB34708/61A GB3470861A GB988097A GB 988097 A GB988097 A GB 988097A GB 34708/61 A GB34708/61 A GB 34708/61A GB 3470861 A GB3470861 A GB 3470861A GB 988097 A GB988097 A GB 988097A
Authority
GB
United Kingdom
Prior art keywords
atms
mixtures
silicon carbide
solid body
diluent gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34708/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB988097A publication Critical patent/GB988097A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon

Abstract

Very pure SiC is deposited on at least one heated solid body from vapour phase reaction of a halogenosilane and a halogenohydrocarbon, wherein the reactants have partial pressures of 0.002-0.02 atms. due to the use of subatmospheric pressure, and/or the presence of a non-oxidizing diluent gas. Halogenosilanes may be SiHCl3, SiCl4, SiBr4, Si2Cl6 or mixtures thereof. Halogenohydrocarbons may be halogenated saturated or unsaturated hydrocarbons, e.g. halogenated benzene or naphthalene, CCl4, C6H5CH2Cl, CHCl3, CBr4, CH3I, trichloroethylene, hexachlorobutadiene, chlorprene or mixtures thereof. The reaction takes place at 800-2500 DEG C. and at 0.001-1 atms. The heated solid body, shaped as a rod, tube, coil or plate, may be made of graphite, carbon, silicon carbide, refractory carbides, borides, silicides, Ta, W, Mo. The non-oxidizing diluent gas may be H2, H2S, a noble gas, or a mixture thereof. A metal or non-metal halide or hydride, a vaporized element, a silane or hydrocarbon containing a nitrogen, phosphorus or aluminium substituent may be added continuously or intermittently to the gaseous starting mixture to influence the electrical conductivity of the product. Specification 899,947 is referred to.
GB34708/61A 1960-09-27 1961-09-27 Process for the manufacture of very pure silicon carbide Expired GB988097A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW28636A DE1184738B (en) 1960-09-27 1960-09-27 Process for the production of high purity silicon carbide crystals

Publications (1)

Publication Number Publication Date
GB988097A true GB988097A (en) 1965-04-07

Family

ID=7598995

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34708/61A Expired GB988097A (en) 1960-09-27 1961-09-27 Process for the manufacture of very pure silicon carbide

Country Status (2)

Country Link
DE (1) DE1184738B (en)
GB (1) GB988097A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485586A (en) * 1968-09-26 1969-12-23 Ppg Industries Inc Preparation of submicron titanium carbide
CN109264693A (en) * 2018-09-25 2019-01-25 温州大学新材料与产业技术研究院 A kind of method of batch synthesis porous carbon materials and the purposes of porous carbon materials
CN109279593A (en) * 2018-09-25 2019-01-29 温州大学新材料与产业技术研究院 A kind of production application method of high specific surface area porous carbon material
WO2022123072A1 (en) * 2020-12-11 2022-06-16 Zadient Technologies SAS Method and device for producing a sic solid material

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009002129A1 (en) 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hard-coated bodies and methods for producing hard-coated bodies
EP4001475A1 (en) 2020-11-19 2022-05-25 Zadient Technologies SAS Improved furnace apparatus for crystal production
WO2022123080A2 (en) 2020-12-11 2022-06-16 Zadient Technologies SAS Method and device for producing a sic solid material
EP4279452A1 (en) 2022-05-18 2023-11-22 Zadient Technologies SAS Sic growth substrate, cvd reactor and method for the production of sic
EP4306688A1 (en) 2022-07-13 2024-01-17 Zadient Technologies SAS Method and device for producing a sic solid material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485586A (en) * 1968-09-26 1969-12-23 Ppg Industries Inc Preparation of submicron titanium carbide
CN109264693A (en) * 2018-09-25 2019-01-25 温州大学新材料与产业技术研究院 A kind of method of batch synthesis porous carbon materials and the purposes of porous carbon materials
CN109279593A (en) * 2018-09-25 2019-01-29 温州大学新材料与产业技术研究院 A kind of production application method of high specific surface area porous carbon material
WO2022123072A1 (en) * 2020-12-11 2022-06-16 Zadient Technologies SAS Method and device for producing a sic solid material

Also Published As

Publication number Publication date
DE1184738B (en) 1965-01-07

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