GB1128757A - Vapor deposition process for producing ªß-silicon carbide - Google Patents
Vapor deposition process for producing ªß-silicon carbideInfo
- Publication number
- GB1128757A GB1128757A GB19961/66A GB1996166A GB1128757A GB 1128757 A GB1128757 A GB 1128757A GB 19961/66 A GB19961/66 A GB 19961/66A GB 1996166 A GB1996166 A GB 1996166A GB 1128757 A GB1128757 A GB 1128757A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sicl
- heated
- sic
- substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,128,757. #-Silicon carbide. TEXAS INSTRUMENTS Inc. 5 May, 1966, No. 19961/66. Heading C1A. A layer of #-SiC is produced by introducing a gaseous stream containing Si- and C-bearing compounds and H 2 into a reaction zone containing a heated substrate such that a quiescent zone is established adjacent to the substrate through which the gases diffuse and react to deposit SiC. The product may be stoichiometric, or may have up to 1% excess C or up to 40% excess Si. The substrate, which is heated to 900-1470‹ C., may be a filament of Ta, SiC or graphite, heated by direct passage of electric current using water-cooled electrodes (Fig. 1, not shown), or a graphite crucible, heated by R.F. coils (Fig. 2, not shown). Alternatively, a carbon body with depressions in it may be used, and the carbon subsequently burnt off to give boat-shaped articles. The Si and C source may be in the same compound, e.g. CH 3 SiCl 3 , (CH 3 ) 2 SiCl 2 , (CH 3 ) 3 SiCl or (CH 3 ) 4 Si, or in different compounds, e.g. C from methane, ethane, propane, benzene, toluene, xylene, ethylene, or propylene, and Si from SiCl 4 , SiBr 4 , SiI 4 , mono-, di- or tri-, chloro-, bromo-, or iodo-silane. The mole ratio CH 3 SiCl 3 /H 2 may be 4À2-99.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB19961/66A GB1128757A (en) | 1966-05-05 | 1966-05-05 | Vapor deposition process for producing ªß-silicon carbide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB19961/66A GB1128757A (en) | 1966-05-05 | 1966-05-05 | Vapor deposition process for producing ªß-silicon carbide |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1128757A true GB1128757A (en) | 1968-10-02 |
Family
ID=10138023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19961/66A Expired GB1128757A (en) | 1966-05-05 | 1966-05-05 | Vapor deposition process for producing ªß-silicon carbide |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1128757A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3519472A (en) * | 1967-03-29 | 1970-07-07 | Nat Res Dev | Manufacture of silicon carbide |
EP0028707A1 (en) * | 1979-11-05 | 1981-05-20 | International Business Machines Corporation | Electrostatic clutch |
WO2019133558A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133560A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133556A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133561A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133559A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133557A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2022123078A1 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123072A1 (en) * | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
EP4279452A1 (en) | 2022-05-18 | 2023-11-22 | Zadient Technologies SAS | Sic growth substrate, cvd reactor and method for the production of sic |
EP4306688A1 (en) | 2022-07-13 | 2024-01-17 | Zadient Technologies SAS | Method and device for producing a sic solid material |
-
1966
- 1966-05-05 GB GB19961/66A patent/GB1128757A/en not_active Expired
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3519472A (en) * | 1967-03-29 | 1970-07-07 | Nat Res Dev | Manufacture of silicon carbide |
EP0028707A1 (en) * | 1979-11-05 | 1981-05-20 | International Business Machines Corporation | Electrostatic clutch |
WO2019133558A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133560A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133556A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133561A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133559A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
WO2019133557A1 (en) | 2017-12-27 | 2019-07-04 | Heraeus Gmsi Llc | Process for manufacturing a silicon carbide coated body |
EP3514257A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
EP3514128A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
EP3514259A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
EP3514130A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
EP3514127A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
EP3514129A1 (en) | 2018-01-18 | 2019-07-24 | Heraeus GMSI LLC | Process for manufacturing a silicon carbide coated body |
WO2022123078A1 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123080A2 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123072A1 (en) * | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123083A2 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123084A2 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123079A1 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123077A1 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123083A3 (en) * | 2020-12-11 | 2022-07-28 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2022123080A3 (en) * | 2020-12-11 | 2022-08-11 | Zadient Technologies SAS | Sic solid material, method and device for producing a sic solid material |
EP4279452A1 (en) | 2022-05-18 | 2023-11-22 | Zadient Technologies SAS | Sic growth substrate, cvd reactor and method for the production of sic |
WO2023222785A1 (en) | 2022-05-18 | 2023-11-23 | Zadient Technologies SAS | SiC GROWTH SUBSTRATE, CVD REACTOR AND METHOD FOR THE PRODUCTION OF SiC |
EP4306688A1 (en) | 2022-07-13 | 2024-01-17 | Zadient Technologies SAS | Method and device for producing a sic solid material |
WO2024013049A1 (en) | 2022-07-13 | 2024-01-18 | Zadient Technologies SAS | METHOD AND DEVICE FOR PRODUCING A SiC SOLID MATERIAL |
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