GB1280649A - Refractory compounds - Google Patents

Refractory compounds

Info

Publication number
GB1280649A
GB1280649A GB43139/69A GB4313969A GB1280649A GB 1280649 A GB1280649 A GB 1280649A GB 43139/69 A GB43139/69 A GB 43139/69A GB 4313969 A GB4313969 A GB 4313969A GB 1280649 A GB1280649 A GB 1280649A
Authority
GB
United Kingdom
Prior art keywords
carbon
sulphur
source
elementary
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43139/69A
Inventor
Stephen Arthur Lee
Charles Frederick Cardy
Keith George Sampson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik LIL Ltd
Original Assignee
Laporte Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laporte Industries Ltd filed Critical Laporte Industries Ltd
Priority to GB43139/69A priority Critical patent/GB1280649A/en
Priority to CH1295170A priority patent/CH520078A/en
Publication of GB1280649A publication Critical patent/GB1280649A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
    • C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
    • C04B35/62277—Fibres based on carbides
    • C04B35/62281—Fibres based on carbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1280649 Silicon carbide LAPORTE INDUSTRIES Ltd 20 Aug 1970 [29 Aug 1969] 43139/69 Heading C1A Silicon carbide is produced by reacting together at 1350-1800‹ C. silica, elementary carbon a source of sulphur, hydrogen and a gaseous source of carbon in a reaction zone, and recovering the SiC from a condensation zone. The gaseous carbon source may be carbon monoxide or a hydrocarbon, e.g. CH 4 , C 2 H 6 , C 3 H 8 , CH 2 = CH 2 , CH#CH, cyclohexane, benzene, toluene or xylene: the hydrogen may be derived in situ by cracking of the hydrocarbons. The elementary carbon may be finely divided carbon or may be constituted by the material of the reaction zone. The sulphur source may be elementary sulphur, H 2 S or silicon sulphides. Alternatively the sulphur and carbon may be derived from the same compound using, e.g. mercaptans, organic sulphides or carbon disulphide. The process may be carried out at reduced or elevated pressure, and the gases preferably have a velocity in the range 15 to 2000 cm/min. which may be conveniently adjusted by the addition of an inert gas such as argon. The condensation zone may have a temperature at least 50‹ C. below the reaction zone suitably one in the range 1000‹ to 1550‹ C. There may be provided a substrate for deposition of the SiC in whisker form in the condensation zone made of a material such as carbon, alumina, mullite or silicon carbide. SiC whiskers produced may have a thickness less than 1 micron and a length up to 5 mm.
GB43139/69A 1969-08-29 1969-08-29 Refractory compounds Expired GB1280649A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB43139/69A GB1280649A (en) 1969-08-29 1969-08-29 Refractory compounds
CH1295170A CH520078A (en) 1969-08-29 1970-08-28 Process for preparing silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB43139/69A GB1280649A (en) 1969-08-29 1969-08-29 Refractory compounds

Publications (1)

Publication Number Publication Date
GB1280649A true GB1280649A (en) 1972-07-05

Family

ID=10427481

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43139/69A Expired GB1280649A (en) 1969-08-29 1969-08-29 Refractory compounds

Country Status (2)

Country Link
CH (1) CH520078A (en)
GB (1) GB1280649A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327066A (en) * 1979-11-14 1982-04-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of preparing silicon carbide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327066A (en) * 1979-11-14 1982-04-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of preparing silicon carbide

Also Published As

Publication number Publication date
CH520078A (en) 1972-03-15

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees