GB1075558A - The production of monocrystalline semiconductor bodies - Google Patents

The production of monocrystalline semiconductor bodies

Info

Publication number
GB1075558A
GB1075558A GB46867/65A GB4686765A GB1075558A GB 1075558 A GB1075558 A GB 1075558A GB 46867/65 A GB46867/65 A GB 46867/65A GB 4686765 A GB4686765 A GB 4686765A GB 1075558 A GB1075558 A GB 1075558A
Authority
GB
United Kingdom
Prior art keywords
production
monocrystalline semiconductor
semiconductor bodies
rod
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46867/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1075558A publication Critical patent/GB1075558A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A monocrystalline rod of silicon having a 111-crystal axis is produced by zone-melting a monocrystalline rod having a 115-crystal axis in contact with a seed. The charge rod is built up from a core by deposition from the gas phase. The cross-section is changed from dodecagonal to circular during the zone-melting.
GB46867/65A 1964-11-04 1965-11-04 The production of monocrystalline semiconductor bodies Expired GB1075558A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094023 1964-11-04

Publications (1)

Publication Number Publication Date
GB1075558A true GB1075558A (en) 1967-07-12

Family

ID=7518410

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46867/65A Expired GB1075558A (en) 1964-11-04 1965-11-04 The production of monocrystalline semiconductor bodies

Country Status (4)

Country Link
US (1) US3366462A (en)
BE (1) BE671741A (en)
GB (1) GB1075558A (en)
NL (1) NL6514308A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL270516A (en) * 1960-11-30
NL270518A (en) * 1960-11-30

Also Published As

Publication number Publication date
US3366462A (en) 1968-01-30
NL6514308A (en) 1966-05-05
BE671741A (en) 1966-05-03

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