CA546346A - Methods of producing silicon of high purity - Google Patents

Methods of producing silicon of high purity

Info

Publication number
CA546346A
CA546346A CA546346A CA546346DA CA546346A CA 546346 A CA546346 A CA 546346A CA 546346 A CA546346 A CA 546346A CA 546346D A CA546346D A CA 546346DA CA 546346 A CA546346 A CA 546346A
Authority
CA
Canada
Prior art keywords
methods
high purity
producing silicon
silicon
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA546346A
Other languages
French (fr)
Inventor
M. Wilson Jack
A. Radley Jack
D. Kahn Eileen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Publication date
Application granted granted Critical
Publication of CA546346A publication Critical patent/CA546346A/en
Expired legal-status Critical Current

Links

CA546346A Methods of producing silicon of high purity Expired CA546346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA546346T

Publications (1)

Publication Number Publication Date
CA546346A true CA546346A (en) 1957-09-17

Family

ID=35703539

Family Applications (1)

Application Number Title Priority Date Filing Date
CA546346A Expired CA546346A (en) Methods of producing silicon of high purity

Country Status (1)

Country Link
CA (1) CA546346A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3069241A (en) * 1958-03-21 1962-12-18 Int Standard Electric Corp Manufacture of high purity silicon
US3140922A (en) * 1957-03-07 1964-07-14 Int Standard Electric Corp Methods and apparatus for treating reactive materials
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
US4132763A (en) * 1976-08-12 1979-01-02 Wacker-Chemie Gmbh Process for the production of pure, silicon elemental semiconductor material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140922A (en) * 1957-03-07 1964-07-14 Int Standard Electric Corp Methods and apparatus for treating reactive materials
US3069241A (en) * 1958-03-21 1962-12-18 Int Standard Electric Corp Manufacture of high purity silicon
US3147141A (en) * 1959-05-04 1964-09-01 Ishizuka Hiroshi Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
US4132763A (en) * 1976-08-12 1979-01-02 Wacker-Chemie Gmbh Process for the production of pure, silicon elemental semiconductor material

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