GB882570A - Improvements in or relating to the manufacture of semi-conductive bodies from a melt - Google Patents

Improvements in or relating to the manufacture of semi-conductive bodies from a melt

Info

Publication number
GB882570A
GB882570A GB23486/59A GB2348659A GB882570A GB 882570 A GB882570 A GB 882570A GB 23486/59 A GB23486/59 A GB 23486/59A GB 2348659 A GB2348659 A GB 2348659A GB 882570 A GB882570 A GB 882570A
Authority
GB
United Kingdom
Prior art keywords
melt
crystal
vertical axis
relating
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23486/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB882570A publication Critical patent/GB882570A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

In growing a monocrystalline body from a seed crystal by upwardly withdrawing the crystal from a melt, the crystal is rotated about a <PICT:0882570/III/1> <PICT:0882570/III/2> vertical axis thereof and is also rotated relatively with respect to the melt about a second vertical axis. The melt may be rotated while the vertical axis of the crystal is maintained stationary (Fig. 1), or vice versa (Fig. 2). The relative rotation is preferably at least ten times that of the rotation of the crystal about its vertical axis. The relative rotation may be 30 rev./min. and the crystal rotation 1 rev./min. A plurality of bodies may be withdrawn.
GB23486/59A 1958-07-11 1959-07-08 Improvements in or relating to the manufacture of semi-conductive bodies from a melt Expired GB882570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL882570X 1958-07-11

Publications (1)

Publication Number Publication Date
GB882570A true GB882570A (en) 1961-11-15

Family

ID=19853574

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23486/59A Expired GB882570A (en) 1958-07-11 1959-07-08 Improvements in or relating to the manufacture of semi-conductive bodies from a melt

Country Status (4)

Country Link
DE (1) DE1152827B (en)
FR (1) FR1229486A (en)
GB (1) GB882570A (en)
NL (1) NL103463C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1256626B (en) * 1963-03-13 1967-12-21 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
US3413098A (en) * 1966-08-10 1968-11-26 Westinghouse Electric Corp Process for varying the width of sheets of web material

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244111B (en) * 1964-05-23 1967-07-13 Consortium Elektrochem Ind Process for the production of homogeneous rods from semiconducting multi-component systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh Process for the production of single crystals by pulling from a melt

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1256626B (en) * 1963-03-13 1967-12-21 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
US3413098A (en) * 1966-08-10 1968-11-26 Westinghouse Electric Corp Process for varying the width of sheets of web material

Also Published As

Publication number Publication date
NL103463C (en)
FR1229486A (en) 1960-09-07
DE1152827B (en) 1963-08-14

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