GB915882A - Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods - Google Patents
Improvements in or relating to processes for the production of mono-crystalline semi-conductor rodsInfo
- Publication number
- GB915882A GB915882A GB11111/60A GB1111160A GB915882A GB 915882 A GB915882 A GB 915882A GB 11111/60 A GB11111/60 A GB 11111/60A GB 1111160 A GB1111160 A GB 1111160A GB 915882 A GB915882 A GB 915882A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- production
- seed
- mono
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
In the production of a monocrystalline rod by the passage of a molten zone through a polycrystalline rod having a monocrystalline seed fused thereto, the molten zone is passed through the rod a number of times, e.g. 9, from the junction with the seed, whereafter the molten zone is passed through the rod from a point therein spaced from the junction with the seed, e.g. a distance equal to the diameter of the rod. The recrystallized rod may be cut from the seed at the said point, the rod stump then being used as seed in the production of a further monocrystalline rod by the method of the invention. The apparatus employed may be the same as described in Specification 915,881.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES62679A DE1109141B (en) | 1959-04-22 | 1959-04-22 | Process for the production of a single-crystal, highly purified semiconductor rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB915882A true GB915882A (en) | 1963-01-16 |
Family
ID=7495799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11111/60A Expired GB915882A (en) | 1959-04-22 | 1960-03-29 | Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE589911A (en) |
| CH (1) | CH382296A (en) |
| DE (1) | DE1109141B (en) |
| FR (1) | FR1254723A (en) |
| GB (1) | GB915882A (en) |
| NL (1) | NL108954C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4886647A (en) * | 1987-04-27 | 1989-12-12 | Shin-Etsu Handotai Co., Ltd. | Supporting apparatus for semiconductor crystal rod |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL285816A (en) * | 1962-01-26 |
-
0
- NL NL108954D patent/NL108954C/xx active
-
1959
- 1959-04-22 DE DES62679A patent/DE1109141B/en active Pending
-
1960
- 1960-01-22 CH CH76060A patent/CH382296A/en unknown
- 1960-03-29 GB GB11111/60A patent/GB915882A/en not_active Expired
- 1960-04-20 BE BE589911A patent/BE589911A/en unknown
- 1960-04-21 FR FR824942A patent/FR1254723A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4886647A (en) * | 1987-04-27 | 1989-12-12 | Shin-Etsu Handotai Co., Ltd. | Supporting apparatus for semiconductor crystal rod |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1109141B (en) | 1961-06-22 |
| NL108954C (en) | |
| CH382296A (en) | 1964-09-30 |
| BE589911A (en) | 1960-10-20 |
| FR1254723A (en) | 1961-02-24 |
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