FR1374962A - Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method - Google Patents

Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method

Info

Publication number
FR1374962A
FR1374962A FR880041A FR880041A FR1374962A FR 1374962 A FR1374962 A FR 1374962A FR 880041 A FR880041 A FR 880041A FR 880041 A FR880041 A FR 880041A FR 1374962 A FR1374962 A FR 1374962A
Authority
FR
France
Prior art keywords
free
dislocation
crucible
manufacturing
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR880041A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES71415A external-priority patent/DE1128413B/en
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR880041A priority Critical patent/FR1374962A/en
Application granted granted Critical
Publication of FR1374962A publication Critical patent/FR1374962A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR880041A 1960-11-25 1961-11-24 Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method Expired FR1374962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR880041A FR1374962A (en) 1960-11-25 1961-11-24 Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (en) 1960-11-25 1960-11-25 Process for the production of decomposition-free single-crystal silicon by crucible-free zone melting
FR880041A FR1374962A (en) 1960-11-25 1961-11-24 Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method

Publications (1)

Publication Number Publication Date
FR1374962A true FR1374962A (en) 1964-10-16

Family

ID=25996281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR880041A Expired FR1374962A (en) 1960-11-25 1961-11-24 Process for manufacturing a dislocation-free silicon single crystal by the crucible-free zone melting method

Country Status (1)

Country Link
FR (1) FR1374962A (en)

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