BE610603A - Process for manufacturing a single crystal of silicon, free from dislocations, by the crucible-free zone melting method - Google Patents
Process for manufacturing a single crystal of silicon, free from dislocations, by the crucible-free zone melting methodInfo
- Publication number
- BE610603A BE610603A BE610603A BE610603A BE610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A
- Authority
- BE
- Belgium
- Prior art keywords
- free
- dislocations
- crucible
- silicon
- manufacturing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/38—Means for extinguishing or suppressing arc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/38—Means for extinguishing or suppressing arc
- H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Fuses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES71415A DE1128413B (en) | 1960-11-25 | 1960-11-25 | Process for the production of decomposition-free single-crystal silicon by crucible-free zone melting |
Publications (1)
Publication Number | Publication Date |
---|---|
BE610603A true BE610603A (en) | 1962-05-22 |
Family
ID=7502452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE610603A BE610603A (en) | 1960-11-25 | 1961-11-22 | Process for manufacturing a single crystal of silicon, free from dislocations, by the crucible-free zone melting method |
Country Status (7)
Country | Link |
---|---|
US (1) | US3175891A (en) |
BE (1) | BE610603A (en) |
CH (1) | CH395554A (en) |
DE (1) | DE1128413B (en) |
GB (2) | GB926487A (en) |
NL (2) | NL266876A (en) |
SE (1) | SE306303B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6411697A (en) * | 1963-10-15 | 1965-04-20 | ||
DE1224273B (en) * | 1964-06-23 | 1966-09-08 | Siemens Ag | Device for crucible-free zone melting |
BE789637A (en) * | 1972-10-03 | 1973-04-03 | Elphiac Sa | SINGLE CRYSTAL MANUFACTURING PROCESS AND INSTALLATION TO EXECUTE THIS PROCESS. |
DE2356376A1 (en) * | 1973-11-12 | 1975-05-15 | Siemens Ag | PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION |
-
1960
- 1960-08-24 GB GB29190/60A patent/GB926487A/en not_active Expired
- 1960-11-25 DE DES71415A patent/DE1128413B/en active Pending
-
1961
- 1961-06-20 CH CH721561A patent/CH395554A/en unknown
- 1961-07-10 NL NL266876D patent/NL266876A/xx unknown
- 1961-07-10 NL NL61266876A patent/NL139006B/en unknown
- 1961-08-18 GB GB29981/61A patent/GB926497A/en not_active Expired
- 1961-11-22 BE BE610603A patent/BE610603A/en unknown
- 1961-11-24 US US157033A patent/US3175891A/en not_active Expired - Lifetime
- 1961-11-25 SE SE11762/61A patent/SE306303B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB926487A (en) | 1963-05-22 |
CH395554A (en) | 1965-07-15 |
SE306303B (en) | 1968-11-25 |
NL139006B (en) | 1973-06-15 |
DE1128413B (en) | 1962-04-26 |
US3175891A (en) | 1965-03-30 |
NL266876A (en) | |
GB926497A (en) | 1963-05-22 |
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