NL139006B - PROCESS FOR MANUFACTURE OF SILICON MONOCRYSTALS BY MEANS OF CRISCHLESS ZONE MELTES. - Google Patents

PROCESS FOR MANUFACTURE OF SILICON MONOCRYSTALS BY MEANS OF CRISCHLESS ZONE MELTES.

Info

Publication number
NL139006B
NL139006B NL61266876A NL266876A NL139006B NL 139006 B NL139006 B NL 139006B NL 61266876 A NL61266876 A NL 61266876A NL 266876 A NL266876 A NL 266876A NL 139006 B NL139006 B NL 139006B
Authority
NL
Netherlands
Prior art keywords
meltes
crischless
zone
manufacture
silicon monocrystals
Prior art date
Application number
NL61266876A
Other languages
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL139006B publication Critical patent/NL139006B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/38Means for extinguishing or suppressing arc
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/38Means for extinguishing or suppressing arc
    • H01H2085/386Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Fuses (AREA)
NL61266876A 1960-11-25 1961-07-10 PROCESS FOR MANUFACTURE OF SILICON MONOCRYSTALS BY MEANS OF CRISCHLESS ZONE MELTES. NL139006B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (en) 1960-11-25 1960-11-25 Process for the production of decomposition-free single-crystal silicon by crucible-free zone melting

Publications (1)

Publication Number Publication Date
NL139006B true NL139006B (en) 1973-06-15

Family

ID=7502452

Family Applications (2)

Application Number Title Priority Date Filing Date
NL266876D NL266876A (en) 1960-11-25 1961-07-10
NL61266876A NL139006B (en) 1960-11-25 1961-07-10 PROCESS FOR MANUFACTURE OF SILICON MONOCRYSTALS BY MEANS OF CRISCHLESS ZONE MELTES.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL266876D NL266876A (en) 1960-11-25 1961-07-10

Country Status (7)

Country Link
US (1) US3175891A (en)
BE (1) BE610603A (en)
CH (1) CH395554A (en)
DE (1) DE1128413B (en)
GB (2) GB926487A (en)
NL (2) NL266876A (en)
SE (1) SE306303B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (en) * 1963-10-15 1965-04-20
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
BE789637A (en) * 1972-10-03 1973-04-03 Elphiac Sa SINGLE CRYSTAL MANUFACTURING PROCESS AND INSTALLATION TO EXECUTE THIS PROCESS.
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION

Also Published As

Publication number Publication date
US3175891A (en) 1965-03-30
GB926487A (en) 1963-05-22
NL266876A (en)
BE610603A (en) 1962-05-22
DE1128413B (en) 1962-04-26
GB926497A (en) 1963-05-22
SE306303B (en) 1968-11-25
CH395554A (en) 1965-07-15

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