GB926497A - A process for producing a monocrystal from a polycrystalline rod of silicon - Google Patents

A process for producing a monocrystal from a polycrystalline rod of silicon

Info

Publication number
GB926497A
GB926497A GB29981/61A GB2998161A GB926497A GB 926497 A GB926497 A GB 926497A GB 29981/61 A GB29981/61 A GB 29981/61A GB 2998161 A GB2998161 A GB 2998161A GB 926497 A GB926497 A GB 926497A
Authority
GB
United Kingdom
Prior art keywords
rod
seed
zone
speed
molten zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29981/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB926497A publication Critical patent/GB926497A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Fuses (AREA)

Abstract

<PICT:0926497/III/1> In the production of a monocrystalline rod of silicon by the upward passage of a molten zone 3 (produced by a pancake coil 4) a plurality of times through a monocrystalline seed 5 and an adjoining polycrystalline rod 2 supported between holders, a rod free from crystal imperfection is produced by a final passage at a speed of 7-15 m.m./min. through seed 5, at a gradually reduced speed through the conical portion 2a of rod 2, and a final speed of less than 7 m.m./min. through the main portion of rod 2, the two holders being moved apart at a speed of at least 25 m.m./min. while the molten zone is at the junction of seed 5 and rod 2 to produce a restriction 6. The diameter of rod 2 may be 12 m.m., that of seed 5 may be 3-5 m.m., and that of the constriction may be 2 m.m. A second similar constriction may be produced a few m.m. above the first. An incandescent zone may initially be formed in rod 2 by conduction from an inductively heated molybdenum holder or by radiation, passed down into seed 5, and converted there into the first molten zone. An incandescent zone may similarly precede each subsequent molten zone. The speed of travel of molten zone through rod 2 may be 4 m.m./min. and that of the incandescent zone may be 200 m.m./min. One of the holders may be rotated during each passage of the molten zone (preferably not the last). The induction coil may be fed at a frequency of 4 megacycles per sec. Specifications 888,148 and 889,160 are referred to.
GB29981/61A 1960-11-25 1961-08-18 A process for producing a monocrystal from a polycrystalline rod of silicon Expired GB926497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (en) 1960-11-25 1960-11-25 Process for the production of decomposition-free single-crystal silicon by crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB926497A true GB926497A (en) 1963-05-22

Family

ID=7502452

Family Applications (2)

Application Number Title Priority Date Filing Date
GB29190/60A Expired GB926487A (en) 1960-11-25 1960-08-24 Improvements in and relating to electrical fuse assemblies
GB29981/61A Expired GB926497A (en) 1960-11-25 1961-08-18 A process for producing a monocrystal from a polycrystalline rod of silicon

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB29190/60A Expired GB926487A (en) 1960-11-25 1960-08-24 Improvements in and relating to electrical fuse assemblies

Country Status (7)

Country Link
US (1) US3175891A (en)
BE (1) BE610603A (en)
CH (1) CH395554A (en)
DE (1) DE1128413B (en)
GB (2) GB926487A (en)
NL (2) NL139006B (en)
SE (1) SE306303B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (en) * 1963-10-15 1965-04-20
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
BE789637A (en) * 1972-10-03 1973-04-03 Elphiac Sa SINGLE CRYSTAL MANUFACTURING PROCESS AND INSTALLATION TO EXECUTE THIS PROCESS.
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION

Also Published As

Publication number Publication date
DE1128413B (en) 1962-04-26
BE610603A (en) 1962-05-22
US3175891A (en) 1965-03-30
SE306303B (en) 1968-11-25
NL266876A (en)
NL139006B (en) 1973-06-15
GB926487A (en) 1963-05-22
CH395554A (en) 1965-07-15

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