GB1216522A - Zone-by-zone melting a rod - Google Patents

Zone-by-zone melting a rod

Info

Publication number
GB1216522A
GB1216522A GB00485/68A GB1048568A GB1216522A GB 1216522 A GB1216522 A GB 1216522A GB 00485/68 A GB00485/68 A GB 00485/68A GB 1048568 A GB1048568 A GB 1048568A GB 1216522 A GB1216522 A GB 1216522A
Authority
GB
United Kingdom
Prior art keywords
zone
melting
seed
diameter
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00485/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1216522A publication Critical patent/GB1216522A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

1,216,522. Zone-melting. SIEMENS A.G. 4 March, 1968 [3 March, 1967], No. 10485/68. Heading B1S. A polycrystalline rod 1 of silicon having a diameter of up to 30 mm. or more is converted into monocrystalline form by zone-melting using a seed 4 having a diameter of down to 4 mm., the end of the rod attached to the seed being tapered. Tapering may be effected by melting or by mechanical or chemical erosion. The tapered end may have a frustoconical portion 2 having an apex angle of no more than 90‹ and a terminal cylindrical portion 3 having a diameter of 6-9 mm. and a length of 6-9 mm. The terminal cylindrical portion may be fused to the frustoconical portion. The seed may be fused on by means of a concentric or eccentric induction coil. The seed may be rotated during zone-melting. In the initial stage of zone-melting, a constriction 7 having a diameter of 2 mm. and a length of 20 mm. may be formed in the terminal cylindrical portion.
GB00485/68A 1967-03-03 1968-03-04 Zone-by-zone melting a rod Expired GB1216522A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0108625 1967-03-03

Publications (1)

Publication Number Publication Date
GB1216522A true GB1216522A (en) 1970-12-23

Family

ID=7528925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00485/68A Expired GB1216522A (en) 1967-03-03 1968-03-04 Zone-by-zone melting a rod

Country Status (3)

Country Link
US (1) US3498846A (en)
DE (1) DE1619993A1 (en)
GB (1) GB1216522A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
DE2314971C3 (en) * 1973-03-26 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting
DE2358300C3 (en) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for holding a semiconductor crystal rod vertically during crucible-free zone melting
US3996096A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Method for crucible-free zone melting of semiconductor crystal rods
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3961906A (en) * 1973-11-22 1976-06-08 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
DE2438852C3 (en) * 1974-08-13 1980-02-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of homogeneously doped semiconductor single crystal rods
DE3433458A1 (en) * 1984-09-12 1986-03-20 Leybold-Heraeus GmbH, 5000 Köln METHOD AND DEVICE FOR MELTING ROD-SHAPED MATERIAL BY MEANS OF AN INDUCTION COIL
CN114808110B (en) * 2022-05-20 2024-06-14 江苏鑫华半导体科技股份有限公司 Device for detecting massive polysilicon impurities, application thereof and detection method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation

Also Published As

Publication number Publication date
DE1619993A1 (en) 1971-07-01
US3498846A (en) 1970-03-03

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