US4886647A - Supporting apparatus for semiconductor crystal rod - Google Patents
Supporting apparatus for semiconductor crystal rod Download PDFInfo
- Publication number
- US4886647A US4886647A US07/133,791 US13379187A US4886647A US 4886647 A US4886647 A US 4886647A US 13379187 A US13379187 A US 13379187A US 4886647 A US4886647 A US 4886647A
- Authority
- US
- United States
- Prior art keywords
- ring
- rod
- movable ring
- lock means
- supporting apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 title description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Definitions
- This invention relates to a supporting apparatus adapted to support a semiconductor monocrystal rod grown by the floating zone (FZ) method.
- the so-called FZ method is often adopted in a process for production of a semiconductor monocrystal rod.
- This method is effective in turning a polycrystal rod (such as a polycrystal silicon rod prepared through vapour-phase growth of silicon based on thermal decomposition or reduction of a substance containing silicon, or by simply casting silicon into a rod) into a highly-purified monocrystal rod.
- the FZ method employs a heating means such as an induction heating coil to heat a vertically held polycrystal rod.
- the heating means heats only a small portion of the rod into a narrow melted zone at a time, but as the vertically held rod is slowly lowered passing the heating means, the molten zone sweeps the whole length of the rod, starting at the joint with a seed, to eventually turn it into a pure monocrystal rod.
- the impurities are more apt to be solved in the melted zone than to stay in the solidifying portions, so that the melted zone collects the impurities as it sweeps the rod upward. Hence, the resultant monocrystal rod is free from impurities.
- the melted portion of the rod forms a so-called floating zone between the unmelted portions of the rod and is held therebetween by its surface tension and the electromagnetic force against gravity.
- the floating zone travels upward in the rod accompanying the downward movement of the rod relative to the heating means, the portion which previously was a part of the floating zone solidifies to form a part of the monocrystal rod.
- the FZ method utilizes a thin seed crystal to provide the starting source for the growth of the monocrystal rod.
- the polycrystal rod is suspended from above and its lower end is melted to merge with the upper tip of the seed crystal.
- the monocrystal starts growing from the seed crystal, it forms a contracted thread-like portion before it begins growing into a conical portion.
- the polycrystal rod is suspended from above, the newly formed monocrystal portion of the rod, i.e. the portion below the floating zone, is supported via the thread-like portion and the thin seed crystal, so that as the monocrystal portion grows longer it becomes so heavy that even a slight vibration may cause the melt to drip and, in an extreme case, cause the thread-like portion or even the seed crystal to break.
- the invention as claimed is intended to remedy these drawbacks of the prior art apparatuses. It discloses a small, compact supporting apparatus for growing semiconductor monocrystals, so small that there is no need of increasing the size of the unit in which the apparatus is installed, and with the aid of the apparatus of the invention the monocrystal rod is held so firmly that it is unshaken by vibration.
- the movable ring is normally unlocked and can freely move horizontally, and as the drive means moves the movable ring upward, at first a point on the inner edge of the ring is touched by the tapered side of the conical portion of the monocrystal rod and then the movable ring is urged at the point to slide horizontally until the ring is touched by the rod at three points in all, that is, until the ring finds its most suitable position to snugly receive the rod. Once the three points are thus determined, the ring does not move horizontally, and soon a lock means works to lock the ring to prevent its horizontal movement.
- the rod is firmly received by the horizontal movable ring such that the rod receives no biasing force from the ring and at the same time has no freedom of horizontal movement. Consequently, no ordinary vibration can shake and break the rod.
- the supporting apparatus of the invention merely requires the vertical movement of its constituting parts, so that the apparatus requires only small installation space and can be a small, compact apparatus itself.
- FIG. 1 is a longitudinal sectional view of a supporting apparatus embodying the invention at resting position
- FIG. 2 is a longitudinal sectional view of the same supporting apparatus shown in FIG. 1 after the first contact;
- FIG. 3 is a longitudinal sectional view of the same supporting apparatus shown in FIG. 1 at locked position;
- FIG. 4 is a section taken on line IV--IV in FIG. 1;
- FIG. 5 is an enlarged view of a portion A in FIG. 2;
- FIG. 6 is a section taken on line VI--VI in FIG. 2;
- FIG. 7 is a section taken on line VII--VII in FIG. 3.
- FIG. 8 is a longitudinal sectional view of a second supporting apparatus embodying the invenion at resting position.
- FIG. 9 is a longitudinal sectional view of the same supporting apparatus shown in FIG. 8 at locked position.
- FIG. 1 is a cross-sectional view of a supporting device in accordance with the invention, wherein reference numeral 1 designates a vertically standing hollow shaft, which contains a coaxial inner shaft 2 therein.
- the bottoms of these shafts 1, 2 are connected to a motor-driven rotary drive means (not shown) devised such that the shafts 1, 2 are rotated at the same constant slow speed around their common axis.
- the inner shaft 2 alone is held by another drive means also, such as a low-pressure hydraulic cylinder, which displaces the shaft 2 vertically at a constant low speed. Therefore, the two drive means together can cause the two shafts 1, 2 to move such that while they rotatate together at an equal speed, the shaft 2 moves upward or downward relative to the shaft 1.
- the whole system shown in FIG. 1 excluding the fixed heating device 18 is lowered slowly as the single crystal 15 grows.
- the upper end of the shaft 1 is tightly received in a seed holder 3.
- the shaft 1 has three vertical slits 4, which are equiangularly spaced from each other, as seen in FIG. 4.
- Fixed at the upper end of the shaft 2 are three L-shaped rods 5, which are equiangularly arranged such that each rod 5, extending horizontally (radially) from the top of the shaft 2, passes through the respective slit 4 (FIG. 4) and then, bending upwardly, extends vertically.
- the slits 4 extend as high as the lower end of the seed holder 3, and as low as the configuration shown in FIG. 1 is possible, that is, low enough to allow the L-shaped rods 5 to go down until a substantial space is formed between a ring 10 and a ring 6, hereinafter described.
- each pit 6a contains in it a vertically placed spring 7 and a ball 9 seated on a lubricated seat 8, which is fixed on the top of the spring 7, so that the ball 9 has a freedom of vertical movement, by virtue of the spring 7, as well as spinning movement.
- the length of the spring 7 is such that, when it is released (FIG. 1) a small portion of the ball 9 peeps from the pit 6a.
- the upper surface of the support ring 6 is planted with numerous minute needles 6b, shown only in FIG. 5, so that the frictional resistance of the surface is considerably increased.
- the seed holder 3 has a coaxially formed step 3a on which a movable ring 10 can alight (FIG. 1).
- the movable ring 10 is a thin plate with a round cornered triangular vacancy 11 bored in the center (FIG. 6).
- the movable ring 10 is made of a hard material, such as ceramics or a hard metal.
- the ring 10 has its bottom face, excluding the circular zone 12' where the balls 9 are likely to come in contact with the ring 10, coated with soft metal 12, such as silver or copper.
- the seed holder 3 holds the seed crystal 13 in such a manner that the seed crystal 13 is vertically planted in the center of the top of the seed holder 3.
- a monocrystal rod 15 and a polycrystal rod 17 is a melted zone 16 shifting upward as the monocrystal rod grows.
- the upper end of the polycrystal rod 17 is held by a holding device such as a pneumatic clutch, not shown, which imparts to the crystal rod 17 vertical rectilinear motion as well as rotary motion.
- the heating device 18 is a high-frequency heating device connected to a high-frequency generator, not shown.
- FIG. 1 it is seen that the formation of the conical portion 15a of the monocrystal rod 15 has been completed; and until this completion the supporting apparatus of the invention remains resting well below the movable ring 10 lest it should interfere with the growth of the thread-like portion 14 and the conical portion 15a.
- the inner shaft 2 is displaced upward by the drive means, and then as the balls 9 come in contact with the movable ring 10, the support ring 6 lifts the movable ring 10 from the step 3a of the seed holder 3 (FIG. 2).
- the resiliency of the springs 7 and the weight of the movable ring 10 are such that, on this occasion, the horizontally borne movable ring 10 is touched only by the balls 9. Therefore, in the state of FIG. 2, the movable ring 10 can freely move horizontally.
- a point a on the inner edge of the support ring 6 comes in contact with the tapered side of the conical portion 15a of the monocrystal rod 15 (FIGS. 2 and 6). Then, a further ascent of the supporting ring 6 causes the conical portion 15a to move the movable ring 10 in the direction indicated by the arrow x in FIG. 2, to thereby allow further smooth ascending of the support ring 6. Then another point b comes in contact with the conical portion 15a, whereupon the movable ring 10 is pushed in a horizontal direction of diminishing the clearance between the conical portion 15a and the remaining untouched side of the round cornered triangular vacancy 11. Thus, a third point c comes in contact with the conical portion 15a (FIG. 7), and as a result, the conical portion 15a is fittedly received in the movable ring 10.
- the conical portion 15a prevents the movable ring 10 not only from moving horizontally but also from ascending further.
- the ring 10 depresses the balls 9 into their respective pits, whereupon the ring 10 lies on the support ring 6. Since the bottom face of the ring 10 is coated with a soft metal and the top face of the ring 6 is planted with numerous minute needles, the ring 10 is frictionally locked by the ring 6 so that it cannot slide on the ring 6 to change its position; thus the monocrystal rod 15 is stably supported by the ring 6 via the ring 10.
- the position of the movable ring 10 thus determined is such that the weight of the monocrystal rod 15 is nearly equally distributed among the three supporting points a, b, c, which is tantamount to say that the monocrystal rod 15 receives little biasing stress from the movable ring 10.
- the drive means to vertically drive the inner rod 2 is so devised that when, during its upward drive, it receives a load greater than a predetermined amount, it automatically stops driving the rod 2.
- the support ring 6 no longer ascends.
- FIGS. 8 and 9 Those elements in the second embodiment that have their counterparts in the first are designated by the same reference numerals as their counterparts, and their explanation is omitted.
- a ball holder 18 which is a ring carrying many balls 19 in it is placed on a support ring 6.
- An annular electromagnet 20 is provided on the bottom face of the support ring 6.
- the movable ring 10, the balls 19, and the ball holder 18 are made of magnetic substance so as to be attracted by the electromagnet 20.
- the inner rod 2 receives an increased load via the L-shaped rods 5, whereupon the inner rod 2 automatically ceases to rise, and at the same time the electromagnet 20 is automatically energized to fasten the movable ring 10, the balls 19 and the ring 18, so that they are kept where they are and unshaken by vibration.
- the monocrystal rod is firmly received by the horizontal movable ring such that the rod receives no biasing force from the ring and at the same time has no freedom of horizontal movement. Consequently, no ordinary vibration can shake and break the rod.
- the supporting apparatus of the invention merely requires the vertical movement of its constituting parts, so that the apparatus requires only small installation space and can be a small, compact apparatus itself.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62103820A JPS63270383A (en) | 1987-04-27 | 1987-04-27 | Device for supporting semiconductor crystal rod |
JP62-103820 | 1987-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4886647A true US4886647A (en) | 1989-12-12 |
Family
ID=14364046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/133,791 Expired - Fee Related US4886647A (en) | 1987-04-27 | 1987-12-16 | Supporting apparatus for semiconductor crystal rod |
Country Status (4)
Country | Link |
---|---|
US (1) | US4886647A (en) |
EP (1) | EP0288639B1 (en) |
JP (1) | JPS63270383A (en) |
DE (1) | DE3771493D1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5582642A (en) * | 1995-06-20 | 1996-12-10 | Memc Electronic Materials, Inc. | Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine |
US5904981A (en) * | 1998-05-27 | 1999-05-18 | Tokuyama Corporation | Polycrystal silicon rod having an improved morphyology |
TWI563132B (en) * | 2014-09-03 | 2016-12-21 | Siltronic Ag | Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method |
CN109563637A (en) * | 2016-08-10 | 2019-04-02 | 胜高股份有限公司 | The manufacturing method and apparatus of monocrystalline |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US29824A (en) * | 1860-08-28 | Improvement in cheese-hoops | ||
GB915882A (en) * | 1959-04-22 | 1963-01-16 | Siemens Ag | Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods |
US3961906A (en) * | 1973-11-22 | 1976-06-08 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
DE2515850A1 (en) * | 1975-04-11 | 1976-10-21 | Leybold Heraeus Gmbh & Co Kg | DEVICE FOR THE PRODUCTION OF SINGLE CRYSTALS |
JPS526310A (en) * | 1975-07-01 | 1977-01-18 | Wacker Chemitronic | Device to support crystal rod |
US4045183A (en) * | 1974-11-21 | 1977-08-30 | Siemens Aktiengesellschaft | Support device for use in a crucible-free floating zone melting apparatus |
DE2626377A1 (en) * | 1976-06-11 | 1977-12-22 | Siemens Ag | Crucible free zone melting support for crystal - comprising rotated and axially displaced bars with independent drives |
DE2626311A1 (en) * | 1976-06-11 | 1977-12-22 | Siemens Ag | Crucibleless zone melting support for crystal rod - by three eccentric semiconductor discs on parallel bars |
US4186173A (en) * | 1975-04-11 | 1980-01-29 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
DE2853414A1 (en) * | 1978-12-11 | 1980-06-19 | Siemens Ag | Crucibleless zone melting device - with adjustable swivelling support arms for pulled single crystal |
DE2853415A1 (en) * | 1978-12-11 | 1980-06-19 | Siemens Ag | Crucibleless zone melting device - with crystal rod support by discs rolling on inclined grooves in support arms around rod |
US4257841A (en) * | 1978-01-06 | 1981-03-24 | Monsanto Company | Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod |
JPS5750754A (en) * | 1980-09-11 | 1982-03-25 | Toshiba Corp | X-ray image multiplier tube and its manufacture |
DD159088A1 (en) * | 1981-05-22 | 1983-02-16 | Karlheinz Trompa | DEVICE FOR REMOVING THE CRYSTAL IN THE MIRROR-FREE ZONES MELTING |
DD233595A1 (en) * | 1984-12-29 | 1986-03-05 | Akad Wissenschaften Ddr | DEVICE FOR THE RADIAL SUPPORT OF A CRYSTAL FOR LOCK-FREE ZONES |
DD235679A1 (en) * | 1985-03-21 | 1986-05-14 | Akad Wissenschaften Ddr | DEVICE FOR SUPPORTING THE CRYSTAL IN TIEGELLOSZ ZONENSCHMELZEN |
JPS62153185A (en) * | 1985-12-25 | 1987-07-08 | Komatsu Denshi Kinzoku Kk | Floating zone melting process and single crystal supporting device therefor |
JPH0648479A (en) * | 1992-07-21 | 1994-02-22 | Toshiba Corp | Device for packing combined washer-dryer |
-
1987
- 1987-04-27 JP JP62103820A patent/JPS63270383A/en active Granted
- 1987-10-02 EP EP87308760A patent/EP0288639B1/en not_active Expired - Lifetime
- 1987-10-02 DE DE8787308760T patent/DE3771493D1/en not_active Expired - Fee Related
- 1987-12-16 US US07/133,791 patent/US4886647A/en not_active Expired - Fee Related
Patent Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US29824A (en) * | 1860-08-28 | Improvement in cheese-hoops | ||
GB915882A (en) * | 1959-04-22 | 1963-01-16 | Siemens Ag | Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods |
US3961906A (en) * | 1973-11-22 | 1976-06-08 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
US4045183A (en) * | 1974-11-21 | 1977-08-30 | Siemens Aktiengesellschaft | Support device for use in a crucible-free floating zone melting apparatus |
DE2515850A1 (en) * | 1975-04-11 | 1976-10-21 | Leybold Heraeus Gmbh & Co Kg | DEVICE FOR THE PRODUCTION OF SINGLE CRYSTALS |
FR2306736A1 (en) * | 1975-04-11 | 1976-11-05 | Leybold Heraeus Gmbh & Co Kg | APPARATUS FOR PRODUCING SINGLE CRYSTALS |
JPS51133106A (en) * | 1975-04-11 | 1976-11-18 | Leybold Heraeus Verwaltung | Apparatus for production of single crystals |
US4186173A (en) * | 1975-04-11 | 1980-01-29 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
GB1478006A (en) * | 1975-04-11 | 1977-06-29 | Leybold Heraeus Verwaltung | Apparatus for growing monocrystals |
US4060392A (en) * | 1975-07-01 | 1977-11-29 | Wacker-Chemitronic Gesellshaft Fur Elektronik Grundstoffe Mbh | Device for the support of a crystalline rod |
DE2529366A1 (en) * | 1975-07-01 | 1977-01-20 | Wacker Chemitronic | DEVICE FOR SUPPORTING A CRYSTALLINE ROD |
JPS526310A (en) * | 1975-07-01 | 1977-01-18 | Wacker Chemitronic | Device to support crystal rod |
DE2626377A1 (en) * | 1976-06-11 | 1977-12-22 | Siemens Ag | Crucible free zone melting support for crystal - comprising rotated and axially displaced bars with independent drives |
DE2626311A1 (en) * | 1976-06-11 | 1977-12-22 | Siemens Ag | Crucibleless zone melting support for crystal rod - by three eccentric semiconductor discs on parallel bars |
US4257841A (en) * | 1978-01-06 | 1981-03-24 | Monsanto Company | Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod |
DE2853415A1 (en) * | 1978-12-11 | 1980-06-19 | Siemens Ag | Crucibleless zone melting device - with crystal rod support by discs rolling on inclined grooves in support arms around rod |
DE2853414A1 (en) * | 1978-12-11 | 1980-06-19 | Siemens Ag | Crucibleless zone melting device - with adjustable swivelling support arms for pulled single crystal |
JPS5750754A (en) * | 1980-09-11 | 1982-03-25 | Toshiba Corp | X-ray image multiplier tube and its manufacture |
DD159088A1 (en) * | 1981-05-22 | 1983-02-16 | Karlheinz Trompa | DEVICE FOR REMOVING THE CRYSTAL IN THE MIRROR-FREE ZONES MELTING |
DD233595A1 (en) * | 1984-12-29 | 1986-03-05 | Akad Wissenschaften Ddr | DEVICE FOR THE RADIAL SUPPORT OF A CRYSTAL FOR LOCK-FREE ZONES |
DD235679A1 (en) * | 1985-03-21 | 1986-05-14 | Akad Wissenschaften Ddr | DEVICE FOR SUPPORTING THE CRYSTAL IN TIEGELLOSZ ZONENSCHMELZEN |
JPS62153185A (en) * | 1985-12-25 | 1987-07-08 | Komatsu Denshi Kinzoku Kk | Floating zone melting process and single crystal supporting device therefor |
JPH0648479A (en) * | 1992-07-21 | 1994-02-22 | Toshiba Corp | Device for packing combined washer-dryer |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5582642A (en) * | 1995-06-20 | 1996-12-10 | Memc Electronic Materials, Inc. | Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine |
US5904981A (en) * | 1998-05-27 | 1999-05-18 | Tokuyama Corporation | Polycrystal silicon rod having an improved morphyology |
TWI563132B (en) * | 2014-09-03 | 2016-12-21 | Siltronic Ag | Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method |
CN109563637A (en) * | 2016-08-10 | 2019-04-02 | 胜高股份有限公司 | The manufacturing method and apparatus of monocrystalline |
CN109563637B (en) * | 2016-08-10 | 2021-01-22 | 胜高股份有限公司 | Method and apparatus for producing single crystal |
DE112017004008B4 (en) | 2016-08-10 | 2021-08-26 | Sumco Corporation | Single crystal manufacturing method and apparatus |
Also Published As
Publication number | Publication date |
---|---|
EP0288639A1 (en) | 1988-11-02 |
EP0288639B1 (en) | 1991-07-17 |
DE3771493D1 (en) | 1991-08-22 |
JPS63270383A (en) | 1988-11-08 |
JPH0479995B2 (en) | 1992-12-17 |
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