GB1081600A - A method of melting a rod of crystalline material zone-by-zone - Google Patents
A method of melting a rod of crystalline material zone-by-zoneInfo
- Publication number
- GB1081600A GB1081600A GB31122/66A GB3112266A GB1081600A GB 1081600 A GB1081600 A GB 1081600A GB 31122/66 A GB31122/66 A GB 31122/66A GB 3112266 A GB3112266 A GB 3112266A GB 1081600 A GB1081600 A GB 1081600A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- thin
- thick
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Abstract
In the zone-melting of a thick silicon rod fused to a thin seed rod (or having a corresponding thin rod portion formed by lapping, sand-blasting or etching) while rotating the thin rod and using an induction coil which has a diameter between that of the thin and thick rods, the thin rod is shifted laterally relatively to the coil and thick rod during passage of the molten zone from the thin to thick rod so as to produce a narrow neck between offset supply and recrystallized portions of the thick rod and the offset relationship is maintained during subsequent zone-melting. The thick rod may also be rotated. The molten zone may be passed upwards or downwards. The induction coil may have a frequency of 500 kc/sec to 4 mc/sec. Pre- and afterheating may be employed.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES89317A DE1218404B (en) | 1964-02-01 | 1964-02-01 | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
NL656506040A NL138766B (en) | 1964-02-01 | 1965-05-12 | METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING. |
DES98115A DE1275032B (en) | 1964-02-01 | 1965-07-10 | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
DES98712A DE1263698B (en) | 1964-02-01 | 1965-08-07 | Process for crucible-free zone melting |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1081600A true GB1081600A (en) | 1967-08-31 |
Family
ID=27437570
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3442/65A Expired GB1044592A (en) | 1964-02-01 | 1965-01-26 | A method of melting a rod of crystalline material zone by zone |
GB30903/66A Expired GB1079870A (en) | 1964-02-01 | 1966-07-08 | A method of melting a rod of crystalline material zone-by-zone |
GB31122/66A Expired GB1081600A (en) | 1964-02-01 | 1966-07-11 | A method of melting a rod of crystalline material zone-by-zone |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3442/65A Expired GB1044592A (en) | 1964-02-01 | 1965-01-26 | A method of melting a rod of crystalline material zone by zone |
GB30903/66A Expired GB1079870A (en) | 1964-02-01 | 1966-07-08 | A method of melting a rod of crystalline material zone-by-zone |
Country Status (9)
Country | Link |
---|---|
US (3) | US3477811A (en) |
BE (3) | BE664435A (en) |
CH (3) | CH413785A (en) |
DE (3) | DE1218404B (en) |
DK (2) | DK124458B (en) |
FR (1) | FR1444259A (en) |
GB (3) | GB1044592A (en) |
NL (3) | NL138766B (en) |
SE (3) | SE309965B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1272886B (en) * | 1966-09-24 | 1968-07-18 | Siemens Ag | Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
DE1544301A1 (en) * | 1966-09-28 | 1970-05-27 | Siemens Ag | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
DE1619996A1 (en) * | 1967-03-18 | 1971-07-08 | Siemens Ag | Method for producing a single-crystal rod, in particular from semiconductor material |
US3607109A (en) * | 1968-01-09 | 1971-09-21 | Emil R Capita | Method and means of producing a large diameter single-crystal rod from a polycrystal bar |
DE1960088C3 (en) * | 1969-11-29 | 1974-07-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for crucible-free zone melting of a crystalline rod |
DE2234512C3 (en) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod |
US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
US5156211A (en) * | 1991-06-10 | 1992-10-20 | Impact Selector, Inc. | Remotely adjustable fishing jar and method for using same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
NL126240C (en) * | 1958-02-19 | |||
US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
US3036812A (en) * | 1958-11-19 | 1962-05-29 | Dewrance & Co | Butterfly valves |
AT223659B (en) * | 1960-11-25 | 1962-10-10 | Siemens Ag | Process for the production of dislocation-free single crystal silicon by crucible-free zone melting |
-
1964
- 1964-02-01 DE DES89317A patent/DE1218404B/en active Pending
- 1964-08-26 CH CH1115564A patent/CH413785A/en unknown
- 1964-11-23 SE SE14136/64A patent/SE309965B/xx unknown
-
1965
- 1965-01-26 GB GB3442/65A patent/GB1044592A/en not_active Expired
- 1965-05-12 NL NL656506040A patent/NL138766B/en not_active IP Right Cessation
- 1965-05-21 FR FR17994A patent/FR1444259A/en not_active Expired
- 1965-05-25 BE BE664435D patent/BE664435A/xx unknown
- 1965-07-10 DE DES98115A patent/DE1275032B/en active Pending
- 1965-08-07 DE DES98712A patent/DE1263698B/en active Pending
-
1966
- 1966-05-03 NL NL6605968A patent/NL6605968A/xx unknown
- 1966-05-17 DK DK251066AA patent/DK124458B/en unknown
- 1966-05-21 DK DK260666AA patent/DK124459B/en unknown
- 1966-06-06 NL NL666607827A patent/NL146402B/en unknown
- 1966-06-09 CH CH837666A patent/CH442246A/en unknown
- 1966-06-09 CH CH837566A patent/CH442245A/en unknown
- 1966-07-08 GB GB30903/66A patent/GB1079870A/en not_active Expired
- 1966-07-08 SE SE9375/66A patent/SE323654B/xx unknown
- 1966-07-08 BE BE683852D patent/BE683852A/xx unknown
- 1966-07-11 US US564118A patent/US3477811A/en not_active Expired - Lifetime
- 1966-07-11 GB GB31122/66A patent/GB1081600A/en not_active Expired
- 1966-07-26 SE SE10177/66A patent/SE323655B/xx unknown
- 1966-08-05 BE BE685153D patent/BE685153A/xx unknown
-
1967
- 1967-08-29 US US664211A patent/US3414388A/en not_active Expired - Lifetime
-
1969
- 1969-08-19 US US853596A patent/US3658598A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DK124458B (en) | 1972-10-23 |
CH442245A (en) | 1967-08-31 |
DK124459B (en) | 1972-10-23 |
BE685153A (en) | 1967-02-06 |
NL6605968A (en) | 1967-01-11 |
BE683852A (en) | 1967-01-09 |
GB1044592A (en) | 1966-10-05 |
FR1444259A (en) | 1966-07-01 |
NL138766B (en) | 1973-05-15 |
US3477811A (en) | 1969-11-11 |
SE323655B (en) | 1970-05-11 |
US3658598A (en) | 1972-04-25 |
US3414388A (en) | 1968-12-03 |
DE1275032B (en) | 1968-08-14 |
NL146402B (en) | 1975-07-15 |
SE309965B (en) | 1969-04-14 |
NL6607827A (en) | 1967-02-08 |
DE1218404B (en) | 1966-06-08 |
DE1263698B (en) | 1968-03-21 |
BE664435A (en) | 1965-11-25 |
GB1079870A (en) | 1967-08-16 |
NL6506040A (en) | 1966-11-14 |
CH413785A (en) | 1966-05-31 |
SE323654B (en) | 1970-05-11 |
CH442246A (en) | 1967-08-31 |
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