GB751126A - Improvements in or relating to methods of producing semi-conductive monocrystals - Google Patents

Improvements in or relating to methods of producing semi-conductive monocrystals

Info

Publication number
GB751126A
GB751126A GB6236/54A GB623654A GB751126A GB 751126 A GB751126 A GB 751126A GB 6236/54 A GB6236/54 A GB 6236/54A GB 623654 A GB623654 A GB 623654A GB 751126 A GB751126 A GB 751126A
Authority
GB
United Kingdom
Prior art keywords
zone
semi
monocrystals
relating
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6236/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB751126A publication Critical patent/GB751126A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Furnace Details (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

751,126. Zone-melting process. PHILIPS ELECTRICAL INDUSTRIES, Ltd. March 3, 1954 [March 6, 1953], No. 6236/54. Class 82(1). [Also in Group XXXVI] A monocrystal semi-conductor having portions of different resistivities and/or different conductivity types is produced by placing the semi-conductor material 5 in an elongated vessel 1, producing a molten zone 3 which travels along the body so that a monocrystal is formed behind the zone, and adding acceptor or donor materials locally to the molten zone. The acceptor or donor impurity may be placed on the semiconductor as at 6 and 7. Germanium or silicon may be used, and heating may be effected by a high frequency coil 4.
GB6236/54A 1953-03-06 1954-03-03 Improvements in or relating to methods of producing semi-conductive monocrystals Expired GB751126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL751126X 1953-03-06

Publications (1)

Publication Number Publication Date
GB751126A true GB751126A (en) 1956-06-27

Family

ID=19824526

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6236/54A Expired GB751126A (en) 1953-03-06 1954-03-03 Improvements in or relating to methods of producing semi-conductive monocrystals

Country Status (2)

Country Link
FR (1) FR1094267A (en)
GB (1) GB751126A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20110323A1 (en) * 2011-12-19 2013-06-20 Pvd Technologies Snc Di Vidani A E A FORCED DRIVING METHOD OF A SEMICONDUCTOR MATERIAL LINE AND PLANT THAT MAKES THIS METHOD

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238448B (en) * 1957-07-26 1967-04-13 Siemens Ag Method for doping a rod-shaped semiconductor body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20110323A1 (en) * 2011-12-19 2013-06-20 Pvd Technologies Snc Di Vidani A E A FORCED DRIVING METHOD OF A SEMICONDUCTOR MATERIAL LINE AND PLANT THAT MAKES THIS METHOD
WO2013093747A1 (en) * 2011-12-19 2013-06-27 Pvd Technologies Snc Di Vidani A. E A. A method for the forced doping of a doped silicon ingot and system for exploiting the method

Also Published As

Publication number Publication date
FR1094267A (en) 1955-05-16

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