GB967844A - A process for treating material which crystallises - Google Patents
A process for treating material which crystallisesInfo
- Publication number
- GB967844A GB967844A GB1346362A GB1346362A GB967844A GB 967844 A GB967844 A GB 967844A GB 1346362 A GB1346362 A GB 1346362A GB 1346362 A GB1346362 A GB 1346362A GB 967844 A GB967844 A GB 967844A
- Authority
- GB
- United Kingdom
- Prior art keywords
- axis
- symmetry
- deformation
- cross
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
- A47G9/02—Bed linen; Blankets; Counterpanes
- A47G9/0207—Blankets; Duvets
Abstract
967,844. Zone-melting. SIEMENS-SCHUCKERTWERKE A.G. April 6, 1962 [April 11, 1961], No. 13463/62. Heading B1S. [Also in Division H5] In the formation of a single crystal rod by zone-melting or crystal-pulling, the crosssection of the melt being crystallized is deformed to correspond to the natural crosssectional shape of the crystal. In the case of silicon or germanium, the cross-section is an equilateral triangle when the axis of symmetry is the (111)-axis, a square when the axis of symmetry is the (100)-axis, and a rhomb when the axis of symmetry is the (110)-axis. In the case of zinc or cadmium, the cross-section is a hexagon when the axis of symmetry is the (0001)-axis. In the case of potassium chloride or tungsten, the cross-section is a triangle or rectangle. Deformation may be by the use of heated argon or helium (Fig. 1), an electrostatic field (Fig. 3), or an electromagnetic field (Fig. 4). The electrostatic field may be formed by the application of a potential difference of 10 kV. in a vacuum or protective gas atmosphere. The electromagnetic field may be formed by feeding a current of 10 kc./s. into an induction coil fed with a heating current of 4 mc/s., the coil having the shape shown in Figs. 5 or 6. The coil may be of silver-plated copper tubing internally cooled by liquid or gas. Different methods of deformation may be combined. Deformation may be effected in the last passage only of a molten zone. Specifications 888,148 and 889,160 are referred to.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES73418A DE1205949B (en) | 1961-04-11 | 1961-04-11 | Process for growing single crystals from the melt by pulling or crucible-free zone melting |
Publications (1)
Publication Number | Publication Date |
---|---|
GB967844A true GB967844A (en) | 1964-08-26 |
Family
ID=51691331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1346362A Expired GB967844A (en) | 1961-04-11 | 1962-04-06 | A process for treating material which crystallises |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH396838A (en) |
DE (1) | DE1205949B (en) |
FR (1) | FR1375672A (en) |
GB (1) | GB967844A (en) |
NL (1) | NL274893A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3960511A (en) * | 1971-07-15 | 1976-06-01 | Preussag Aktiengesellschaft | Zone melting process |
DE2538854A1 (en) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | METHOD FOR ZONING AND DEVICE FOR ITS IMPLEMENTATION |
US8337615B2 (en) | 2005-04-06 | 2012-12-25 | Pv Silicon Forschungs Und Produktions Gmbh | Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT194444B (en) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Method and device for treating an elongated semiconductor crystal arrangement |
-
0
- NL NL274893D patent/NL274893A/xx unknown
-
1961
- 1961-04-11 DE DES73418A patent/DE1205949B/en active Pending
-
1962
- 1962-01-30 CH CH113262A patent/CH396838A/en unknown
- 1962-04-06 GB GB1346362A patent/GB967844A/en not_active Expired
- 1962-04-10 FR FR893988A patent/FR1375672A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3960511A (en) * | 1971-07-15 | 1976-06-01 | Preussag Aktiengesellschaft | Zone melting process |
DE2538854A1 (en) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | METHOD FOR ZONING AND DEVICE FOR ITS IMPLEMENTATION |
US8337615B2 (en) | 2005-04-06 | 2012-12-25 | Pv Silicon Forschungs Und Produktions Gmbh | Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer |
Also Published As
Publication number | Publication date |
---|---|
DE1205949B (en) | 1965-12-02 |
NL274893A (en) | |
FR1375672A (en) | 1964-10-23 |
CH396838A (en) | 1965-08-15 |
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