GB967844A - A process for treating material which crystallises - Google Patents

A process for treating material which crystallises

Info

Publication number
GB967844A
GB967844A GB1346362A GB1346362A GB967844A GB 967844 A GB967844 A GB 967844A GB 1346362 A GB1346362 A GB 1346362A GB 1346362 A GB1346362 A GB 1346362A GB 967844 A GB967844 A GB 967844A
Authority
GB
United Kingdom
Prior art keywords
axis
symmetry
deformation
cross
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1346362A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB967844A publication Critical patent/GB967844A/en
Expired legal-status Critical Current

Links

Classifications

    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47GHOUSEHOLD OR TABLE EQUIPMENT
    • A47G9/00Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
    • A47G9/02Bed linen; Blankets; Counterpanes
    • A47G9/0207Blankets; Duvets

Abstract

967,844. Zone-melting. SIEMENS-SCHUCKERTWERKE A.G. April 6, 1962 [April 11, 1961], No. 13463/62. Heading B1S. [Also in Division H5] In the formation of a single crystal rod by zone-melting or crystal-pulling, the crosssection of the melt being crystallized is deformed to correspond to the natural crosssectional shape of the crystal. In the case of silicon or germanium, the cross-section is an equilateral triangle when the axis of symmetry is the (111)-axis, a square when the axis of symmetry is the (100)-axis, and a rhomb when the axis of symmetry is the (110)-axis. In the case of zinc or cadmium, the cross-section is a hexagon when the axis of symmetry is the (0001)-axis. In the case of potassium chloride or tungsten, the cross-section is a triangle or rectangle. Deformation may be by the use of heated argon or helium (Fig. 1), an electrostatic field (Fig. 3), or an electromagnetic field (Fig. 4). The electrostatic field may be formed by the application of a potential difference of 10 kV. in a vacuum or protective gas atmosphere. The electromagnetic field may be formed by feeding a current of 10 kc./s. into an induction coil fed with a heating current of 4 mc/s., the coil having the shape shown in Figs. 5 or 6. The coil may be of silver-plated copper tubing internally cooled by liquid or gas. Different methods of deformation may be combined. Deformation may be effected in the last passage only of a molten zone. Specifications 888,148 and 889,160 are referred to.
GB1346362A 1961-04-11 1962-04-06 A process for treating material which crystallises Expired GB967844A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES73418A DE1205949B (en) 1961-04-11 1961-04-11 Process for growing single crystals from the melt by pulling or crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB967844A true GB967844A (en) 1964-08-26

Family

ID=51691331

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1346362A Expired GB967844A (en) 1961-04-11 1962-04-06 A process for treating material which crystallises

Country Status (5)

Country Link
CH (1) CH396838A (en)
DE (1) DE1205949B (en)
FR (1) FR1375672A (en)
GB (1) GB967844A (en)
NL (1) NL274893A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3960511A (en) * 1971-07-15 1976-06-01 Preussag Aktiengesellschaft Zone melting process
DE2538854A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD FOR ZONING AND DEVICE FOR ITS IMPLEMENTATION
US8337615B2 (en) 2005-04-06 2012-12-25 Pv Silicon Forschungs Und Produktions Gmbh Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3960511A (en) * 1971-07-15 1976-06-01 Preussag Aktiengesellschaft Zone melting process
DE2538854A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD FOR ZONING AND DEVICE FOR ITS IMPLEMENTATION
US8337615B2 (en) 2005-04-06 2012-12-25 Pv Silicon Forschungs Und Produktions Gmbh Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer

Also Published As

Publication number Publication date
DE1205949B (en) 1965-12-02
NL274893A (en)
FR1375672A (en) 1964-10-23
CH396838A (en) 1965-08-15

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