GB944192A - Improvements in or relating to methods of making bodies of semi-conductor material - Google Patents

Improvements in or relating to methods of making bodies of semi-conductor material

Info

Publication number
GB944192A
GB944192A GB13919/62A GB1391962A GB944192A GB 944192 A GB944192 A GB 944192A GB 13919/62 A GB13919/62 A GB 13919/62A GB 1391962 A GB1391962 A GB 1391962A GB 944192 A GB944192 A GB 944192A
Authority
GB
United Kingdom
Prior art keywords
side faces
relating
semi
methods
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13919/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB944192A publication Critical patent/GB944192A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth

Abstract

944,192. Dendritic crystal-pulling. SIEMENS & HALSKE A.G. April 11, 1962 [April 11, 1961], No. 13919/62. Addition to 930,432. Heading B1S. In the pulling of a dendritic crystal 25 from the supercooled portion of the molten tip 18 of a rod 17 maintained molten by an induction heating coil 28, the melt adjacent the narrow side faces of the emerging crystal is cooled more intensively than that adjacent the broad side faces. Cooling may be effected by inert gas from a plurality of annular nozzles 26, those facing the narrow side faces having a larger orifice than those facing the broad side faces (Fig. 9); by hydrogen from two nozzles 33 together with a cooling coil 31 (Figs. 10 and 12); or by means of an oval-shaped shortcircuiting metal ring 32 which may be watercooled (Fig. 11). Specification 898,096 also is referred to.
GB13919/62A 1960-09-20 1962-04-11 Improvements in or relating to methods of making bodies of semi-conductor material Expired GB944192A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES70427A DE1162329B (en) 1960-09-20 1960-09-20 Method for producing elongated, in particular dendritic semiconductor bodies and device for carrying out this method
DES73416A DE1202248B (en) 1960-09-20 1961-04-11 Process for the production of ribbon-shaped semiconductor crystals

Publications (1)

Publication Number Publication Date
GB944192A true GB944192A (en) 1963-12-11

Family

ID=25996215

Family Applications (2)

Application Number Title Priority Date Filing Date
GB33494/61A Expired GB930432A (en) 1960-09-20 1961-09-19 Improvements in or relating to methods of making bodies of semi-conductor material
GB13919/62A Expired GB944192A (en) 1960-09-20 1962-04-11 Improvements in or relating to methods of making bodies of semi-conductor material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB33494/61A Expired GB930432A (en) 1960-09-20 1961-09-19 Improvements in or relating to methods of making bodies of semi-conductor material

Country Status (5)

Country Link
US (1) US3293001A (en)
CH (2) CH386395A (en)
DE (2) DE1162329B (en)
GB (2) GB930432A (en)
NL (1) NL269311A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
NL6411697A (en) * 1963-10-15 1965-04-20
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
CN105002556A (en) * 2014-04-21 2015-10-28 洛阳金诺机械工程有限公司 Device for raising crystallization velocity of silicon core during drawing of silicone core

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500569A (en) * 1950-01-13
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
FR1235341A (en) * 1958-03-05 1960-07-08 Siemens Ag Method and apparatus for continuously manufacturing thin mono-crystalline rods
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt

Also Published As

Publication number Publication date
GB930432A (en) 1963-07-03
US3293001A (en) 1966-12-20
CH401919A (en) 1965-11-15
CH386395A (en) 1965-01-15
NL269311A (en)
DE1202248B (en) 1965-10-07
DE1162329B (en) 1964-02-06

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