AT194444B - Method and device for treating an elongated semiconductor crystal arrangement - Google Patents

Method and device for treating an elongated semiconductor crystal arrangement

Info

Publication number
AT194444B
AT194444B AT194444DA AT194444B AT 194444 B AT194444 B AT 194444B AT 194444D A AT194444D A AT 194444DA AT 194444 B AT194444 B AT 194444B
Authority
AT
Austria
Prior art keywords
treating
semiconductor crystal
crystal arrangement
elongated semiconductor
elongated
Prior art date
Application number
Other languages
German (de)
Inventor
Karl Dr Phil Siebertz
Heinz Dr Ing Henker
Reimer Emeis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT194444B publication Critical patent/AT194444B/en

Links

AT194444D 1953-02-26 1954-01-29 Method and device for treating an elongated semiconductor crystal arrangement AT194444B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE194444T 1953-02-26

Publications (1)

Publication Number Publication Date
AT194444B true AT194444B (en) 1958-01-10

Family

ID=29555680

Family Applications (1)

Application Number Title Priority Date Filing Date
AT194444D AT194444B (en) 1953-02-26 1954-01-29 Method and device for treating an elongated semiconductor crystal arrangement

Country Status (1)

Country Link
AT (1) AT194444B (en)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1088923B (en) * 1958-04-03 1960-09-15 Wacker Chemie Gmbh Process for the production of crystalline bodies
DE1107199B (en) * 1959-02-17 1961-05-25 Philips Nv Method for zone melting a rod-shaped body
DE1108185B (en) * 1958-07-11 1961-06-08 Philips Nv Process for the production of crystalline bodies by drawing from a melt
DE1130414B (en) * 1959-04-10 1962-05-30 Elektronik M B H Method and device for pulling single crystals
DE1138375B (en) * 1959-06-12 1962-10-25 Siemens Ag Device for changing the cross-section of the rod during crucible-free zone drawing
DE1140547B (en) * 1959-04-27 1962-12-06 Siemens Ag Process for the production of crystalline semiconductor bodies with a long service life for the minority carriers
DE1142153B (en) * 1959-05-02 1963-01-10 Wacker Chemie Gmbh Process for cleaning and recrystallizing solid substances without a pan
DE1148525B (en) * 1959-05-29 1963-05-16 Siemens Ag Method for enlarging the cross-section of the rod during crucible-free zone melting of a rod made of crystalline material, in particular semiconductor material
DE1150357B (en) * 1959-04-30 1963-06-20 Ibm Device for cleaning crystals, in particular semiconductor single crystals, by zone melting
DE1162329B (en) * 1960-09-20 1964-02-06 Siemens Ag Method for producing elongated, in particular dendritic semiconductor bodies and device for carrying out this method
DE1180346B (en) * 1958-03-14 1964-10-29 Gustav Weissenberg Dr H C Dr H Process for producing high-purity crystals, in particular from semiconductor materials
DE1190918B (en) * 1960-06-24 1965-04-15 Wacker Chemie Gmbh Process for the targeted doping of rod-shaped bodies during zone melting
DE1194820B (en) * 1960-03-30 1965-06-16 Telefunken Patent Process for pulling single crystals of homogeneous concentration of impurities and device for carrying out the process
DE1203230B (en) * 1958-12-12 1965-10-21 Siemens Ag Process for the production of rods made of semiconductor material that are uniformly doped over their entire length
DE1205949B (en) * 1961-04-11 1965-12-02 Siemens Ag Process for growing single crystals from the melt by pulling or crucible-free zone melting
DE1209551B (en) * 1961-12-07 1966-01-27 Siemens Ag Process for crucible-free zone melting of a rod-shaped semiconductor body with a control of its diameter or cross-sectional profile and device for carrying out this process
US3234012A (en) * 1953-02-14 1966-02-08 Siemens Ag Method for remelting a rod of crystallizable material by crucible-free zonemelting
DE1211592B (en) * 1959-04-20 1966-03-03 Westinghouse Electric Corp Process for the production of silicon rods with close tolerances
DE1211593B (en) * 1960-04-27 1966-03-03 Wacker Chemie Gmbh Process for the crucible-free production of high-purity, electrically semiconducting, crystalline compounds
DE1212496B (en) * 1960-07-20 1966-03-17 Herbert Staats Process for zone melting of rods made of electrically conductive material and device for carrying out the process
DE1231671B (en) * 1962-04-27 1967-01-05 Siemens Ag Device for controlling the diameter of the solidification front of the melting zone during zone melting of a semiconductor rod
DE1238442B (en) * 1959-07-13 1967-04-13 Licentia Gmbh Method for controlling the expansion of the melting zone in one direction in crucible-free zone melting
DE1240816B (en) * 1959-10-13 1967-05-24 Philips Nv Method for producing single crystals and for cleaning and / or doping a solid substance, in particular a semiconductor material
DE1241801B (en) * 1957-06-25 1967-06-08 Western Electric Co Continuous process for zone melting a fusible mixture of a solvent and at least one substance dissolved therein
DE1242578B (en) * 1960-09-29 1967-06-22 Siemens Ag Device for the production of ribbon-shaped, dendritically grown, high-purity semiconductor crystals
DE1244111B (en) * 1964-05-23 1967-07-13 Consortium Elektrochem Ind Process for the production of homogeneous rods from semiconducting multi-component systems
DE1257740B (en) * 1959-10-19 1968-01-04 Philips Nv Method and device for crucible zone melting
DE1259854B (en) * 1961-02-07 1968-02-01 Siemens Ag Method for crucible-free zone melting of a rod of semiconductor material held at its ends
DE1278992B (en) * 1959-07-16 1968-10-03 Siemens Ag Process for crucible zone melting of rod-shaped semiconductor bodies
DE1290117B (en) * 1963-03-22 1969-03-06 Siemens Ag Device for crucible zone melting of a crystalline rod
DE1719021B1 (en) * 1963-07-13 1969-09-11 Siemens Ag Method for reducing the cross section of a vertically arranged rod of semiconductor material

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3234012A (en) * 1953-02-14 1966-02-08 Siemens Ag Method for remelting a rod of crystallizable material by crucible-free zonemelting
DE1241801B (en) * 1957-06-25 1967-06-08 Western Electric Co Continuous process for zone melting a fusible mixture of a solvent and at least one substance dissolved therein
DE1180346B (en) * 1958-03-14 1964-10-29 Gustav Weissenberg Dr H C Dr H Process for producing high-purity crystals, in particular from semiconductor materials
DE1088923B (en) * 1958-04-03 1960-09-15 Wacker Chemie Gmbh Process for the production of crystalline bodies
DE1108185B (en) * 1958-07-11 1961-06-08 Philips Nv Process for the production of crystalline bodies by drawing from a melt
DE1203230B (en) * 1958-12-12 1965-10-21 Siemens Ag Process for the production of rods made of semiconductor material that are uniformly doped over their entire length
DE1107199B (en) * 1959-02-17 1961-05-25 Philips Nv Method for zone melting a rod-shaped body
DE1130414B (en) * 1959-04-10 1962-05-30 Elektronik M B H Method and device for pulling single crystals
DE1211592B (en) * 1959-04-20 1966-03-03 Westinghouse Electric Corp Process for the production of silicon rods with close tolerances
DE1140547B (en) * 1959-04-27 1962-12-06 Siemens Ag Process for the production of crystalline semiconductor bodies with a long service life for the minority carriers
DE1150357B (en) * 1959-04-30 1963-06-20 Ibm Device for cleaning crystals, in particular semiconductor single crystals, by zone melting
DE1142153B (en) * 1959-05-02 1963-01-10 Wacker Chemie Gmbh Process for cleaning and recrystallizing solid substances without a pan
DE1148525B (en) * 1959-05-29 1963-05-16 Siemens Ag Method for enlarging the cross-section of the rod during crucible-free zone melting of a rod made of crystalline material, in particular semiconductor material
DE1138375B (en) * 1959-06-12 1962-10-25 Siemens Ag Device for changing the cross-section of the rod during crucible-free zone drawing
DE1238442B (en) * 1959-07-13 1967-04-13 Licentia Gmbh Method for controlling the expansion of the melting zone in one direction in crucible-free zone melting
DE1278992B (en) * 1959-07-16 1968-10-03 Siemens Ag Process for crucible zone melting of rod-shaped semiconductor bodies
DE1240816B (en) * 1959-10-13 1967-05-24 Philips Nv Method for producing single crystals and for cleaning and / or doping a solid substance, in particular a semiconductor material
DE1257740B (en) * 1959-10-19 1968-01-04 Philips Nv Method and device for crucible zone melting
DE1194820B (en) * 1960-03-30 1965-06-16 Telefunken Patent Process for pulling single crystals of homogeneous concentration of impurities and device for carrying out the process
DE1211593B (en) * 1960-04-27 1966-03-03 Wacker Chemie Gmbh Process for the crucible-free production of high-purity, electrically semiconducting, crystalline compounds
DE1190918B (en) * 1960-06-24 1965-04-15 Wacker Chemie Gmbh Process for the targeted doping of rod-shaped bodies during zone melting
DE1212496B (en) * 1960-07-20 1966-03-17 Herbert Staats Process for zone melting of rods made of electrically conductive material and device for carrying out the process
DE1162329B (en) * 1960-09-20 1964-02-06 Siemens Ag Method for producing elongated, in particular dendritic semiconductor bodies and device for carrying out this method
DE1242578B (en) * 1960-09-29 1967-06-22 Siemens Ag Device for the production of ribbon-shaped, dendritically grown, high-purity semiconductor crystals
DE1259854B (en) * 1961-02-07 1968-02-01 Siemens Ag Method for crucible-free zone melting of a rod of semiconductor material held at its ends
DE1205949B (en) * 1961-04-11 1965-12-02 Siemens Ag Process for growing single crystals from the melt by pulling or crucible-free zone melting
DE1209551B (en) * 1961-12-07 1966-01-27 Siemens Ag Process for crucible-free zone melting of a rod-shaped semiconductor body with a control of its diameter or cross-sectional profile and device for carrying out this process
DE1231671B (en) * 1962-04-27 1967-01-05 Siemens Ag Device for controlling the diameter of the solidification front of the melting zone during zone melting of a semiconductor rod
DE1290117B (en) * 1963-03-22 1969-03-06 Siemens Ag Device for crucible zone melting of a crystalline rod
DE1719021B1 (en) * 1963-07-13 1969-09-11 Siemens Ag Method for reducing the cross section of a vertically arranged rod of semiconductor material
DE1244111B (en) * 1964-05-23 1967-07-13 Consortium Elektrochem Ind Process for the production of homogeneous rods from semiconducting multi-component systems

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