GB1284068A - Improvements in or relating to the drawing of crystalline bodies - Google Patents

Improvements in or relating to the drawing of crystalline bodies

Info

Publication number
GB1284068A
GB1284068A GB45193/70A GB4519370A GB1284068A GB 1284068 A GB1284068 A GB 1284068A GB 45193/70 A GB45193/70 A GB 45193/70A GB 4519370 A GB4519370 A GB 4519370A GB 1284068 A GB1284068 A GB 1284068A
Authority
GB
United Kingdom
Prior art keywords
crystal
coil
heated
pulling
induction coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45193/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1284068A publication Critical patent/GB1284068A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Abstract

1284068 Crystal-pulling SIEMENS AG 23 Sept 1970 [24 Sept 1969] 45193/70 Heading B1S In a crystal-pulling process where a sealcrystal is used, the material from which the crystal is to be pulled is, prior to melting, heated to a temperature such that it becomes a good enough conductor of electricity for induction heating to occur. This is accomplished by heating the seed-crystal so that its free end at least is heated and presenting the heated crystal to the material when the conductivity has risen high enough as a result of this treatment, the material is melted by an induction coil and conventional crystal-pulling occurs. In the illustrated embodiment, crucible 2 is kept in a shielding gas and cooled by water passing along tubes and rings 6, 3a, 4a, 5, 4b, 3b and 7. Induction coil 8 is wound around the crucible 2. Seed crystal 11 is mounted in holder 10 and shaft 19. Induction coil 13 is mounted on movable shaft 12. Holder 10 is made of highly conductive steel and at the start of the operation is coupled electrically to the field of coil 13. This heats crystal 11 so that its conductivity rises to the point where it may be heated by coil 13. By moving the coil 13 relative to crystal 11, the tip of the crystal may be melted. The crystal is then moved down so that the melt touches the material 9 and heats it. Conventional crystal-pulling may then occur. The coil of the process to obtain a crystal of silicon, which does not couple satisfactorily until at a temperature above 600‹C is described.
GB45193/70A 1969-09-24 1970-09-23 Improvements in or relating to the drawing of crystalline bodies Expired GB1284068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948194 DE1948194A1 (en) 1969-09-24 1969-09-24 Process for drawing a crystalline body from a melt material heated to at least the melting temperature and apparatus for carrying out this process

Publications (1)

Publication Number Publication Date
GB1284068A true GB1284068A (en) 1972-08-02

Family

ID=5746317

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45193/70A Expired GB1284068A (en) 1969-09-24 1970-09-23 Improvements in or relating to the drawing of crystalline bodies

Country Status (10)

Country Link
US (1) US3759670A (en)
AT (1) AT309390B (en)
BE (1) BE756590A (en)
CH (1) CH534541A (en)
DE (1) DE1948194A1 (en)
DK (1) DK124175B (en)
FR (1) FR2062437A5 (en)
GB (1) GB1284068A (en)
NL (1) NL7010531A (en)
SE (1) SE368663B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
DE3316547C2 (en) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Cold crucible for melting non-metallic inorganic compounds
AT385059B (en) * 1983-05-31 1988-02-10 Avl Verbrennungskraft Messtech METHOD FOR GROWING CRYSTALS, ESPECIALLY SINGLE CRYSTALS, AND DEVICE FOR CARRYING OUT THE METHOD
CA1309755C (en) * 1987-03-30 1992-11-03 Hiroyoshi Nozaki Method of and apparatus for baking coating layer
JPH04331792A (en) * 1991-04-30 1992-11-19 Osaka Titanium Co Ltd Production of silicon single crystal
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth

Also Published As

Publication number Publication date
CH534541A (en) 1973-03-15
DE1948194A1 (en) 1971-04-01
NL7010531A (en) 1971-03-26
BE756590A (en) 1971-03-24
US3759670A (en) 1973-09-18
FR2062437A5 (en) 1971-06-25
AT309390B (en) 1973-08-10
DK124175B (en) 1972-09-25
SE368663B (en) 1974-07-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees