AT309390B - Method for pulling a crystalline body on a seed crystal fastened in a holder from a melt material heated to at least the melting temperature in a cold coil crucible - Google Patents

Method for pulling a crystalline body on a seed crystal fastened in a holder from a melt material heated to at least the melting temperature in a cold coil crucible

Info

Publication number
AT309390B
AT309390B AT855670A AT855670A AT309390B AT 309390 B AT309390 B AT 309390B AT 855670 A AT855670 A AT 855670A AT 855670 A AT855670 A AT 855670A AT 309390 B AT309390 B AT 309390B
Authority
AT
Austria
Prior art keywords
pulling
holder
melting temperature
seed crystal
melt material
Prior art date
Application number
AT855670A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT309390B publication Critical patent/AT309390B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT855670A 1969-09-24 1970-09-22 Method for pulling a crystalline body on a seed crystal fastened in a holder from a melt material heated to at least the melting temperature in a cold coil crucible AT309390B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948194 DE1948194A1 (en) 1969-09-24 1969-09-24 Process for drawing a crystalline body from a melt material heated to at least the melting temperature and apparatus for carrying out this process

Publications (1)

Publication Number Publication Date
AT309390B true AT309390B (en) 1973-08-10

Family

ID=5746317

Family Applications (1)

Application Number Title Priority Date Filing Date
AT855670A AT309390B (en) 1969-09-24 1970-09-22 Method for pulling a crystalline body on a seed crystal fastened in a holder from a melt material heated to at least the melting temperature in a cold coil crucible

Country Status (10)

Country Link
US (1) US3759670A (en)
AT (1) AT309390B (en)
BE (1) BE756590A (en)
CH (1) CH534541A (en)
DE (1) DE1948194A1 (en)
DK (1) DK124175B (en)
FR (1) FR2062437A5 (en)
GB (1) GB1284068A (en)
NL (1) NL7010531A (en)
SE (1) SE368663B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT385059B (en) * 1983-05-31 1988-02-10 Avl Verbrennungskraft Messtech METHOD FOR GROWING CRYSTALS, ESPECIALLY SINGLE CRYSTALS, AND DEVICE FOR CARRYING OUT THE METHOD

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
DE3316547C2 (en) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Cold crucible for melting non-metallic inorganic compounds
CA1309755C (en) * 1987-03-30 1992-11-03 Hiroyoshi Nozaki Method of and apparatus for baking coating layer
JPH04331792A (en) * 1991-04-30 1992-11-19 Osaka Titanium Co Ltd Production of silicon single crystal
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT385059B (en) * 1983-05-31 1988-02-10 Avl Verbrennungskraft Messtech METHOD FOR GROWING CRYSTALS, ESPECIALLY SINGLE CRYSTALS, AND DEVICE FOR CARRYING OUT THE METHOD

Also Published As

Publication number Publication date
US3759670A (en) 1973-09-18
DE1948194A1 (en) 1971-04-01
BE756590A (en) 1971-03-24
SE368663B (en) 1974-07-15
FR2062437A5 (en) 1971-06-25
DK124175B (en) 1972-09-25
NL7010531A (en) 1971-03-26
CH534541A (en) 1973-03-15
GB1284068A (en) 1972-08-02

Similar Documents

Publication Publication Date Title
CH475014A (en) Process for pulling crystals from the melt
AT290751B (en) Process for continuously melting glass and apparatus for carrying out the process
AT296388B (en) Process for pulling crystals from a melt present in a crucible
AT309390B (en) Method for pulling a crystalline body on a seed crystal fastened in a holder from a melt material heated to at least the melting temperature in a cold coil crucible
AT249898B (en) Method and device for the continuous melting of a metal mass
CH365545A (en) Process for producing crystals from highly pure semiconductor material from a melt in a crucible
BE868915A (en) PROCESS FOR PREPARING PROTECTIVE COATINGS FOR METALS AND METALLIC ALLOYS INTENDED TO BE USED AT HIGH TEMPERATURES
CH461716A (en) Process for starting and maintaining the metal feed to a continuous casting mold and device for carrying out the process
AT288042B (en) Method and apparatus for melting and casting a titanium-nickel-based alloy
AT285847B (en) Method for cooling the mold halves of a casting machine with crawler mold and device for carrying out the method
AT321993B (en) PROCESS FOR PRODUCING AN INSULATING LAYER COMPOSED OF AT LEAST ONE METAL OXYDE ON THE SURFACE OF A SEMICONDUCTOR CRYSTAL
CH442245A (en) Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
AT299129B (en) Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
AT300526B (en) PROCESS FOR AUTOMATICALLY REGULATING A TUBE MILL AND ARRANGEMENT FOR CARRYING OUT THE PROCESS
CH421902A (en) Method for crucible-free zone melting and device for carrying out the method
CH557199A (en) DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.
AT283405B (en) Process for regulating the thermal state of the molten metal in a continuous refining process
DE2126487B2 (en) METHOD AND DEVICE FOR GROWING CRYSTALLINE MATERIAL FROM A SOLUTION
CH493366A (en) Method and device for applying a quality mark to welding rods
AT282847B (en) Device for applying a hard material forming the cutting edge of a cutting tool to a carrier made of softer metal
CH433190A (en) Method and device for pulling up crystals from a melt
AT245044B (en) Apparatus for producing crystals by pulling them from the melt
ATA814273A (en) DEVICE FOR REMOVING LIQUID METAL FROM A CRUCIBLE
CH534540A (en) Method for crucible-free zone melting of a crystalline rod
SU486780A1 (en) The crucible for drawing crystals from the melt by the Czochralski method

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee