CH442246A - Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod - Google Patents

Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Info

Publication number
CH442246A
CH442246A CH837666A CH837666A CH442246A CH 442246 A CH442246 A CH 442246A CH 837666 A CH837666 A CH 837666A CH 837666 A CH837666 A CH 837666A CH 442246 A CH442246 A CH 442246A
Authority
CH
Switzerland
Prior art keywords
rod
crucible
free zone
zone melting
crystalline
Prior art date
Application number
CH837666A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Berger Guenther
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH442246A publication Critical patent/CH442246A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH837666A 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod CH442246A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Publications (1)

Publication Number Publication Date
CH442246A true CH442246A (en) 1967-08-31

Family

ID=27437570

Family Applications (3)

Application Number Title Priority Date Filing Date
CH1115564A CH413785A (en) 1964-02-01 1964-08-26 Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
CH837566A CH442245A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH837666A CH442246A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CH1115564A CH413785A (en) 1964-02-01 1964-08-26 Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
CH837566A CH442245A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Country Status (9)

Country Link
US (3) US3477811A (en)
BE (3) BE664435A (en)
CH (3) CH413785A (en)
DE (3) DE1218404B (en)
DK (2) DK124458B (en)
FR (1) FR1444259A (en)
GB (3) GB1044592A (en)
NL (3) NL138766B (en)
SE (3) SE309965B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) * 1991-06-10 1992-10-20 Impact Selector, Inc. Remotely adjustable fishing jar and method for using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) * 1958-11-19 1962-05-29 Dewrance & Co Butterfly valves
AT223659B (en) * 1960-11-25 1962-10-10 Siemens Ag Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

Also Published As

Publication number Publication date
NL6605968A (en) 1967-01-11
FR1444259A (en) 1966-07-01
SE309965B (en) 1969-04-14
DK124459B (en) 1972-10-23
NL146402B (en) 1975-07-15
SE323654B (en) 1970-05-11
DE1263698B (en) 1968-03-21
GB1044592A (en) 1966-10-05
CH413785A (en) 1966-05-31
DE1275032B (en) 1968-08-14
BE685153A (en) 1967-02-06
CH442245A (en) 1967-08-31
US3414388A (en) 1968-12-03
DK124458B (en) 1972-10-23
BE664435A (en) 1965-11-25
US3658598A (en) 1972-04-25
DE1218404B (en) 1966-06-08
BE683852A (en) 1967-01-09
GB1081600A (en) 1967-08-31
US3477811A (en) 1969-11-11
GB1079870A (en) 1967-08-16
NL138766B (en) 1973-05-15
NL6607827A (en) 1967-02-08
NL6506040A (en) 1966-11-14
SE323655B (en) 1970-05-11

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