CH409884A - Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon - Google Patents

Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon

Info

Publication number
CH409884A
CH409884A CH1113261A CH1113261A CH409884A CH 409884 A CH409884 A CH 409884A CH 1113261 A CH1113261 A CH 1113261A CH 1113261 A CH1113261 A CH 1113261A CH 409884 A CH409884 A CH 409884A
Authority
CH
Switzerland
Prior art keywords
crucible
silicon
particular made
free zone
zone melting
Prior art date
Application number
CH1113261A
Other languages
German (de)
Inventor
Arnulf Dr Hoffmann
Konrad Dr Reuschel
Schmidt Otto
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH409884A publication Critical patent/CH409884A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CH1113261A 1960-11-30 1961-09-25 Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon CH409884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71478A DE1205955B (en) 1960-11-30 1960-11-30 Process for crucible-free zone melting of a silicon rod doped with phosphorus in a vacuum

Publications (1)

Publication Number Publication Date
CH409884A true CH409884A (en) 1966-03-31

Family

ID=7502504

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1113261A CH409884A (en) 1960-11-30 1961-09-25 Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon

Country Status (4)

Country Link
BE (1) BE609336A (en)
CH (1) CH409884A (en)
DE (1) DE1205955B (en)
GB (1) GB948289A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029500A (en) * 1975-03-11 1977-06-14 Nasa Method of growing composites of the type exhibiting the Soret effect

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (en) * 1951-11-16

Also Published As

Publication number Publication date
DE1205955B (en) 1965-12-02
BE609336A (en) 1962-02-15
GB948289A (en) 1964-01-29

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