CH401634A - Process for the shaping processing of semiconductor crystals - Google Patents
Process for the shaping processing of semiconductor crystalsInfo
- Publication number
- CH401634A CH401634A CH647061A CH647061A CH401634A CH 401634 A CH401634 A CH 401634A CH 647061 A CH647061 A CH 647061A CH 647061 A CH647061 A CH 647061A CH 401634 A CH401634 A CH 401634A
- Authority
- CH
- Switzerland
- Prior art keywords
- shaping processing
- semiconductor crystals
- crystals
- semiconductor
- shaping
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000007493 shaping process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
- B24C1/045—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass for cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/168—Treatment of the complete device, e.g. electroforming, ageing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Forests & Forestry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES69133A DE1151162B (en) | 1960-06-27 | 1960-06-27 | Process for the shaping processing, in particular for cutting, of semiconductor crystals by chemical means |
Publications (1)
Publication Number | Publication Date |
---|---|
CH401634A true CH401634A (en) | 1965-10-31 |
Family
ID=7500749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH647061A CH401634A (en) | 1960-06-27 | 1961-06-02 | Process for the shaping processing of semiconductor crystals |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH401634A (en) |
DE (1) | DE1151162B (en) |
GB (1) | GB935307A (en) |
NL (1) | NL266108A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1283641B (en) * | 1964-12-23 | 1968-11-21 | Siemens Ag | Method for shaping processing, in particular for cutting, of semiconductor crystals |
FR2647049B1 (en) * | 1989-05-18 | 1995-04-14 | Grudzinski Richard | METHOD FOR CUTTING MATERIALS USING A JET OF VOLATILE LIQUID |
DE19808721A1 (en) * | 1998-03-02 | 1999-09-09 | Evertz Egon Kg Gmbh & Co | Process for water cutting metal bodies |
RU2475350C2 (en) * | 2010-12-30 | 2013-02-20 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Московский Государственный Технический Университет Имени Н.Э. Баумана" | Method of hydroabrasive cutting of metal sheets |
-
1960
- 1960-06-27 DE DES69133A patent/DE1151162B/en active Pending
-
1961
- 1961-06-02 CH CH647061A patent/CH401634A/en unknown
- 1961-06-19 NL NL266108D patent/NL266108A/xx unknown
- 1961-06-21 GB GB2243861A patent/GB935307A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL266108A (en) | 1964-07-10 |
DE1151162B (en) | 1963-07-04 |
GB935307A (en) | 1963-08-28 |
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