GB935307A - Improvements in or relating to methods of shaping solid semi-conductor crystals - Google Patents

Improvements in or relating to methods of shaping solid semi-conductor crystals

Info

Publication number
GB935307A
GB935307A GB2243861A GB2243861A GB935307A GB 935307 A GB935307 A GB 935307A GB 2243861 A GB2243861 A GB 2243861A GB 2243861 A GB2243861 A GB 2243861A GB 935307 A GB935307 A GB 935307A
Authority
GB
United Kingdom
Prior art keywords
crystal
gas
temperature
solid semi
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2243861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB935307A publication Critical patent/GB935307A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • B24C1/045—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass for cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/168—Treatment of the complete device, e.g. electroforming, ageing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Forests & Forestry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A solid semi-conductor material (e.g. silicon or germanium) is shaped (cut, perforated or hollowed) by means of a gas jet directed thereon, the gas and/or the crystal being heated to a temperature below the melting point of the crystal, said temperature and the composition and pressure of the gas jet being such that a compound is formed between the gas and the crystal, which compound evaporates at said temperature, and the application zone of the crystal being exposed to visible or infra-red light. The gas may be chlorine, bromine, fluorine, hydrogen chloride, oxygen or ozone. The operation is effected in a vessel which is continuously evacuated. The nozzle width is between 5 and 100m .ALSO:A solid semi-conductor material (e.g. silicon or germanium) is shaped (cut, perforated or hollowed) by means of a gas jet directed thereon, the gas and/or the crystal being heated to a temperature below the melting-point of the crystal, said temperature and the composition and pressure of the gas jet being such that a compound is formed between the gas and the crystal, which compound evaporates at said temperature, and the application zone of the crystal being exposed to visible or infra-red light. The gas may be chlorine, bromine, fluorine, hydrogen chloride, oxygen or ozone. The operation is effected in a vessel which is continuously evacuated. The nozzle width is between 5 and 100m .
GB2243861A 1960-06-27 1961-06-21 Improvements in or relating to methods of shaping solid semi-conductor crystals Expired GB935307A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES69133A DE1151162B (en) 1960-06-27 1960-06-27 Process for the shaping processing, in particular for cutting, of semiconductor crystals by chemical means

Publications (1)

Publication Number Publication Date
GB935307A true GB935307A (en) 1963-08-28

Family

ID=7500749

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2243861A Expired GB935307A (en) 1960-06-27 1961-06-21 Improvements in or relating to methods of shaping solid semi-conductor crystals

Country Status (4)

Country Link
CH (1) CH401634A (en)
DE (1) DE1151162B (en)
GB (1) GB935307A (en)
NL (1) NL266108A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2647049A1 (en) * 1989-05-18 1990-11-23 Grudzinski Richard Method for cutting materials using a jet of volatile liquid
WO2012091616A1 (en) * 2010-12-30 2012-07-05 Государственное Образовательное Учреждение Высшего Профессионального Образования "Московский Государственный Технический Университет Имени Н.Э.Баумана" (Мгту Им. Н.Э.Баумана) Method for the hydro-abrasive cutting of metallic sheet material

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283641B (en) * 1964-12-23 1968-11-21 Siemens Ag Method for shaping processing, in particular for cutting, of semiconductor crystals
DE19808721A1 (en) * 1998-03-02 1999-09-09 Evertz Egon Kg Gmbh & Co Process for water cutting metal bodies

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2647049A1 (en) * 1989-05-18 1990-11-23 Grudzinski Richard Method for cutting materials using a jet of volatile liquid
WO2012091616A1 (en) * 2010-12-30 2012-07-05 Государственное Образовательное Учреждение Высшего Профессионального Образования "Московский Государственный Технический Университет Имени Н.Э.Баумана" (Мгту Им. Н.Э.Баумана) Method for the hydro-abrasive cutting of metallic sheet material
RU2475350C2 (en) * 2010-12-30 2013-02-20 Государственное Образовательное Учреждение Высшего Профессионального Образования "Московский Государственный Технический Университет Имени Н.Э. Баумана" Method of hydroabrasive cutting of metal sheets

Also Published As

Publication number Publication date
CH401634A (en) 1965-10-31
NL266108A (en) 1964-07-10
DE1151162B (en) 1963-07-04

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