CH364244A - Process for the production of semiconductor single crystals - Google Patents

Process for the production of semiconductor single crystals

Info

Publication number
CH364244A
CH364244A CH6954759A CH6954759A CH364244A CH 364244 A CH364244 A CH 364244A CH 6954759 A CH6954759 A CH 6954759A CH 6954759 A CH6954759 A CH 6954759A CH 364244 A CH364244 A CH 364244A
Authority
CH
Switzerland
Prior art keywords
production
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Application number
CH6954759A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH364244A publication Critical patent/CH364244A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
CH6954759A 1958-02-19 1959-02-13 Process for the production of semiconductor single crystals CH364244A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (en) 1958-02-19 1958-02-19 Process for the breeding of single crystals by crucible-free zone melting

Publications (1)

Publication Number Publication Date
CH364244A true CH364244A (en) 1962-09-15

Family

ID=7491503

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6954759A CH364244A (en) 1958-02-19 1959-02-13 Process for the production of semiconductor single crystals

Country Status (7)

Country Link
US (1) US3159459A (en)
BE (1) BE575837A (en)
CH (1) CH364244A (en)
DE (1) DE1094710C2 (en)
FR (1) FR1214641A (en)
GB (1) GB888148A (en)
NL (2) NL235481A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (en) * 1961-11-29 1966-05-26 Siemens Ag Method for crucible-free zone melting of semiconductor material
DE1208292B (en) * 1963-03-29 1966-01-05 Siemens Ag Device for crucible-free zone melting of semiconductor material
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (en) * 1964-02-01 1966-06-08 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (en) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for holding a semiconductor crystal rod vertically during crucible-free zone melting
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co Process for producing a crystal from semiconductor material
BE510303A (en) * 1951-11-16
NL89230C (en) * 1952-12-17 1900-01-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (en) * 1954-06-30 1966-05-05 Siemens Ag Process for producing an extremely pure, rod-shaped semiconductor crystal
NL234451A (en) * 1957-12-27

Also Published As

Publication number Publication date
DE1094710C2 (en) 1969-02-20
NL235481A (en)
US3159459A (en) 1964-12-01
DE1094710B (en) 1960-12-15
NL126240C (en)
BE575837A (en) 1959-08-18
GB888148A (en) 1962-01-24
FR1214641A (en) 1960-04-11

Similar Documents

Publication Publication Date Title
CH440235A (en) Process for the production of diamond crystals
CH442242A (en) Process for the production of high purity elements
CH425738A (en) Process for the production of crystalline semiconductor material
CH389127A (en) Process for the production of dyes
CH357121A (en) Process for the production of semiconductor devices
CH372423A (en) Process for the production of solid preparations
CH364244A (en) Process for the production of semiconductor single crystals
CH463650A (en) Process for the production of dyes
CH382127A (en) Process for the production of inert calcium oxide
CH411349A (en) Process for the production of polyamides
CH368163A (en) Process for the production of amino steroids
CH409892A (en) Process for the production of peroxo-monosulphates
CH387635A (en) Process for the production of penicillins
CH417799A (en) Process for the production of dyes
CH411353A (en) Process for the production of polyaldehydes
CH382296A (en) Process for the production of monocrystalline semiconductor material
CH390234A (en) Process for the production of Vinylthioäthylthiolphosph3r- or, -phosphonsäureestern
CH368897A (en) Process for the production of dye-rich preparations
CH373404A (en) Process for the production of coccidiostatically active 5-nitrofurfurylidene hydrazines
AT208928B (en) Process for the production of semiconductor single crystals
CH375362A (en) Process for the manufacture of 4-quinazolones
CH420076A (en) Process for the production of boranates
CH348208A (en) Process for the production of semiconductor devices
CH397672A (en) Process for the production of tetraorganodiphosphines
CH378880A (en) Process for the production of Reichsteins substance S