BE575837A - Manufacturing process for semiconductor single crystals. - Google Patents

Manufacturing process for semiconductor single crystals.

Info

Publication number
BE575837A
BE575837A BE575837A BE575837A BE575837A BE 575837 A BE575837 A BE 575837A BE 575837 A BE575837 A BE 575837A BE 575837 A BE575837 A BE 575837A BE 575837 A BE575837 A BE 575837A
Authority
BE
Belgium
Prior art keywords
manufacturing process
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Application number
BE575837A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE575837A publication Critical patent/BE575837A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
BE575837A 1958-02-19 1959-02-18 Manufacturing process for semiconductor single crystals. BE575837A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (en) 1958-02-19 1958-02-19 Process for the breeding of single crystals by crucible-free zone melting

Publications (1)

Publication Number Publication Date
BE575837A true BE575837A (en) 1959-08-18

Family

ID=7491503

Family Applications (1)

Application Number Title Priority Date Filing Date
BE575837A BE575837A (en) 1958-02-19 1959-02-18 Manufacturing process for semiconductor single crystals.

Country Status (7)

Country Link
US (1) US3159459A (en)
BE (1) BE575837A (en)
CH (1) CH364244A (en)
DE (1) DE1094710C2 (en)
FR (1) FR1214641A (en)
GB (1) GB888148A (en)
NL (2) NL235481A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (en) * 1961-11-29 1966-05-26 Siemens Ag Method for crucible-free zone melting of semiconductor material
DE1208292B (en) * 1963-03-29 1966-01-05 Siemens Ag Device for crucible-free zone melting of semiconductor material
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (en) * 1964-02-01 1966-06-08 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (en) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for holding a semiconductor crystal rod vertically during crucible-free zone melting
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co Process for producing a crystal from semiconductor material
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
NL89230C (en) * 1952-12-17 1900-01-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (en) * 1954-06-30 1966-05-05 Siemens Ag Process for producing an extremely pure, rod-shaped semiconductor crystal
NL234451A (en) * 1957-12-27

Also Published As

Publication number Publication date
FR1214641A (en) 1960-04-11
NL235481A (en)
NL126240C (en)
DE1094710B (en) 1960-12-15
US3159459A (en) 1964-12-01
DE1094710C2 (en) 1969-02-20
CH364244A (en) 1962-09-15
GB888148A (en) 1962-01-24

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