DE1061527B - Process for zone-wise remelting of rods and other elongated workpieces - Google Patents
Process for zone-wise remelting of rods and other elongated workpiecesInfo
- Publication number
- DE1061527B DE1061527B DES32193A DES0032193A DE1061527B DE 1061527 B DE1061527 B DE 1061527B DE S32193 A DES32193 A DE S32193A DE S0032193 A DES0032193 A DE S0032193A DE 1061527 B DE1061527 B DE 1061527B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- workpiece
- rod
- melting
- melted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
Description
.MBL.MBL
Das bekannte Verfahren zum zonenweise sukzessiven Schmelzen und Erstarren eines in Form eines längserstreckten Körpers befindlichen Materials dient hauptsächlich dazu, das Material von unerwünschten Zusätzen zu reinigen. Es beruht auf der Tatsache, daß infolge des Konzentrationssprunges der Verunreinigung zwischen fester und flüssiger Phase eine Anreicherung der Verunreingung — je nach dem Vorzeichen des Konzentrationssprunges bei der jeweiligen Verunreinigung — entweder auf der flüssigen oder der festen Seite dieser Sprungstelle entsteht. Dadurch daß die Schmelzzone allmählich von einem zum anderen Ende des längserstreckten Körpers (im folgenden kurz als »Stab« bezeichnet) verschoben wird, läßt sich die Verunreinigung an das eine bzw. andere Ende des Stabes transportieren. Es ist bekannt, den Vorgang zur Erhöhung des erzielten Reinheitsgrades mehrmals zu wiederholen; es ist ferner bekannt, zur Beschleunigung des Vorganges mehrere Schmelzzonen in gewissen gleichbleibenden Abständen voneinander gleichzeitig zu verwenden. Hierbei kann entweder der Stab relativ zur Wärmequellenanordnung oder diese relativ zu jenem verschoben werden. Bei der praktischen Ausführung des Verfahrens hat sich eine Reihe von Schwierigkeiten ergeben. Es hat sich z. B. herausgestellt, daß bei der bisher angewandten horizontalen Anordnung des Stabes in einem entsprechenden Träger, beispielsweise .Schiffchen, die Schmelzzonen in sich inhomogen waren; dies war einerseits eine Folge der Sedimentionswirkung bzw. Entmischung durch verschiedenes spezifisches Gewicht und rührte andererseits daher, daß die rotationssymmetrisch um den Stab angeordnete Wärmequelle, die beispielsweise aus einem strahlenden Glühring bestand, teilweise durch das Schiffchen abgeschattet wurde, so daß die Erwärmung innerhalb der.Schmelzzone ungleichförmig war. Hierdurch entstand eine Konzentrationsinhomogenität der Verunreinigung längs der Schmelzzone in vertikaler Richtung.The known method for gradually melting and solidifying one zone by zone in the form of a Elongated body located material is mainly used to remove the material from undesired Clean additives. It is based on the fact that as a result of the jump in concentration of the impurity between the solid and liquid phase an accumulation of the impurity - depending on the sign the jump in concentration for the respective contamination - either on the liquid or the solid side of this jump point is created. As a result, the melting zone gradually moves from one to the other The end of the elongated body (hereinafter referred to as "rod" for short) is displaced, can transport the contamination to one or the other end of the rod. It is known the process to repeat several times to increase the degree of purity achieved; it is also known to accelerate the process several melting zones at certain constant distances from each other at the same time to use. Here, either the rod relative to the heat source arrangement or this relative to be moved to that. In the practical implementation of the process, a number of Difficulties arise. It has z. B. found that in the previously used horizontal Arrangement of the rod in a corresponding carrier, for example .Schiffchen, the melting zones in were inhomogeneous; on the one hand, this was a consequence of the sedimentation effect or segregation different specific gravity and, on the other hand, resulted from the fact that the rotationally symmetrical around the rod arranged heat source, which for example consisted of a radiating glow ring, partially through the boat was shaded so that the heating within the melting zone was non-uniform. This resulted in a concentration inhomogeneity of the impurity along the melting zone in a vertical direction Direction.
Durch Vermeidung dieser Inhomogenitäten läßt sich das Verfahren verbessern, insbesondere der Reinigungsvorgang beschleunigen bzw. bis zu noch höheren Reinheitsgraden treiben. Eine andere vorteilhafte Wirkung, die durch die Vermeidung der Inhomogenitäten erzielt wird, besteht darin, daß ein verbessertes Zonenschmelzverfahren zu besonders gleichmäßigen Einkristallen führt, denn durch das relative Verschieben der Schmelzzone längs des Stabes wird auf der erstarrenden Seite aus der Schmelzzone ein Kristall gebildet, wenn vor oder zu Beginn des Schmelzvorganges an der ersten Schmelzzonenstelle ein Impfkristall in bekannter Orientierung angeordnet wird.The method, in particular the cleaning process, can be improved by avoiding these inhomogeneities accelerate or drive up to even higher degrees of purity. Another beneficial one The effect that is achieved by avoiding the inhomogeneities is that an improved Zone melting process leads to particularly uniform single crystals because of the relative displacement the melting zone along the rod becomes a crystal on the solidifying side of the melting zone formed if a seed crystal is formed at the first melting zone location before or at the beginning of the melting process is arranged in a known orientation.
So wird zur Erzielung der geschilderten Vorteile der längserstreckte, zonenweise sukzessive zu schmel-Verfahren
zum zonenweisen UmschmelzenThus, in order to achieve the advantages described, the elongated, zone-by-zone successively becomes the melting process
for zone-wise remelting
von Stäben und anderen
langgestreckten Werkstückenof rods and others
elongated workpieces
Anmelder:
Siemens & Halske Aktiengesellschaft,Applicant:
Siemens & Halske Aktiengesellschaft,
Berlin und München,
München 2, Witteisbacherplatz 2Berlin and Munich,
Munich 2, Witteisbacherplatz 2
Dr. Karl Siebertz und Dr. Heinz Henker, München, sind als Erfinder genannt wordenDr. Karl Siebertz and Dr. Heinz Henker, Munich, have been named as the inventor
zende und wieder zum Erstarren zu bringende Körper derart im Raum angeordnet und/oder erwärmt, daß innerhalb der Schmelzzone bzw. der Schmelzzonen senkrecht zu ihrer Fortschreitungsrichtung relativ zum längserstreckten Körper ein Minimum an Temperatur- und/oder Konzentrations- bzw. mechanischen Spannungsinhomogenitäten auftritt. Dies wird z. B. dadurch erzielt, daß die Längserstreckung des zu schmelzenden und wieder zu erstarrenden Körpers und damit die Fortschreitungsrichtung der Schmelzzone bzw. Zonen senkrecht orientiert ist. Die Temperaturhomogenität läßt sich auch bei einer horizontalen Anordnung dadurch erreichen, daß entweder der zu schmelzende und wieder zu erstarrende Körper nicht in einem Schiffchen, sondern in einem allseitig geschlossenen, zweckmäßig zylindrischen Rohr angeordnet ist, welches gegenüber den an sich gleichförmigen radialen Erwärmung, beispielsweise mittels eines strahlenden Glühringes, in allen Richtungen die gleiche Schirmwirkung ausübt; oder es besteht eine andere Möglichkeit darin, die Erwärmung bei Anwendung eines Schiffchens auf der von diesem abgeschatteten Seite entsprechend stärker zu bemessen. Es wurde bereits vorgeschlagen, den zu schmelzenden und wieder zur Erstarrung zu bringenden langgestreckten Körper praktisch aufrecht und nur an den beiden Enden zu haltern, wobei die Schmelzzone derart dünn in Achsrichtung des Stabes bemessen ist, daß die Oberflächenspannung des geschmolzenen Gutes ausreicht, um dieses zwischen den starren Teilen zu beiden Seiten der Schmelzzone zusammenzuhalten. Hierdurch wird erreicht, daß die Schmelzzone keinezende and again to be brought to solidification body so arranged in the room and / or heated that within the melting zone or the melting zones perpendicular to their direction of advance relative to the elongated body a minimum of temperature and / or concentration or mechanical Stress inhomogeneities occurs. This is z. B. achieved in that the longitudinal extension of the to melting and re-solidifying body and thus the direction of progress of the melting zone or zones is oriented vertically. The temperature homogeneity can also be achieved with a horizontal Achieve arrangement in that either the body to be melted and not to be solidified again arranged in a shuttle, but in an expediently cylindrical tube, which is closed on all sides is, which compared to the per se uniform radial heating, for example by means of a radiant glow ring, exerts the same shielding effect in all directions; or there is one Another possibility is the heating when using a boat on the one shaded by it Page to be dimensioned accordingly stronger. It has already been suggested that the one to be melted and again to be solidified elongated body practically upright and only to the to hold both ends, whereby the melting zone is dimensioned so thin in the axial direction of the rod, that the surface tension of the molten material is sufficient to hold it between the rigid parts to hold both sides of the melting zone together. This ensures that the melting zone does not have any
Berührung mit einer Gefäßwand hat und infolgedessen von dieser keine neuen Verunreinigungen aufnimmt.Has contact with a vessel wall and consequently does not absorb any new impurities from it.
Bei diesem sogenannten tiegellosen Zonenschmelzen mit senkrechtem Stab ist auch die vollständige Rotationssymmetrie gewahrt, was für die Bildung von Eirikristallstäben vorteilhaft ist. Beim Durchziehen der Schmelzzone durch den Stab wird gewissermaßen der erstarrende Teil aus der frei tragenden Schmelze gezogen.In this so-called crucible-free zone melting with a vertical rod, there is also complete rotational symmetry preserved, which is advantageous for the formation of egg crystal rods. When pulling through the melting zone through the rod becomes, so to speak, the solidifying part of the cantilevered melt drawn.
Werden zur Einleitung des Prozesses zwei S.täbe, von denen der eine bereits als Keim ein orientierter Einkristall ist, in mäßiger Berührung gegeneinander gehalten, so tritt, wenn das Schmelzen in der Berührungszone eingeleitet und die Schmelzzone von da in Richtung des polykristallinen Teils fortgeführt wird; die Kristallisation in der vom Keim bestimmten Orientierung ein und setzt sich über den ganzen Stab weg monokristallin fort; es wird ein Einkristall aus der frei schwebenden Schmelze gezogen. Die Schmelze hat keine Berührung mit Gefäßwänden, bleibt also beliebig rein, und eine Kristallisations-Keimwirkung durch die Wandung wird verhindert.To initiate the process, there are two bars, one of which is already an orientated germ Single crystal is held in moderate contact with one another, so when melting occurs in the contact zone initiated and the melting zone is continued from there in the direction of the polycrystalline part; the crystallization begins in the orientation determined by the nucleus and spreads over the entire rod monocrystalline fort; a single crystal is pulled from the freely floating melt. The melt has no contact with the walls of the vessel, so remains as pure as desired, and a crystallization germination effect is prevented by the wall.
Die Erfindung bezieht sich auf ein Verfahren zum zonenweisen Umschmelzen von Stäben und anderen langgestreckten Werkstücken, bei dem durch eine Wärmequelle in dem nur stellenweise, vorzugsweise an ■ seinen Enden gehalterten Werkstück eine geschmolzene Zone erzeugt und von den angrenzenden, durch die geschmolzene Zone voneinander getrennten festen Teilen des Werkstückes frei getragen wird, während infolge einer parallel zur Achse des Werkstückes erfolgenden relativen Verschiebung des Werkstückes zur Wärmequelle die geschmolzene Zone das Werkstück sukzessive durchwandet und umschmilzt. Nach der Erfindung wird der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch eine in Achsenrichtung des Werkstückes erfolgende relative Verschiebung der beiden festen, durch die geschmolzene Zone getrennten Teile des Werkstückes geregelt bzw. ausgeglichen. ■ Durch eine solche axiale Verschiebung der die geschmolzene Zone begrenzenden Stabteile, die dabei entweder auseinandergezogen bzw. aneinandergerückt werden, wird eine Verkleinerung oder eine Vergrößerung des Querschnittes der geschmolzenen Zone erreicht. Dementsprechend kristallisiert das Material der geschmolzenen Zone mit einem kleineren bzw. einem größeren Querschnitt aus. Dadurch kann zunächst ein beim Erstarren auftretender Volumsprung ausgeglichen werden. Ferner kann durch eine sinngemäße Betätigung dieser Maßnahmen ein dicker Stab :zü einem dünnen und ein dünner Stab zu einem dicken Stab umgeschmolzen werden. Dabei kann der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch die sich auf Grund einer schnellen und gleichsinnigen Rotation des gesamten Werkstückes einstellende Zentrifugalkraft weiter vergrößert wenden.The invention relates to a method for zone-wise remelting of rods and others elongated workpieces, in which by a heat source in which only in places, preferably a molten zone is created on the workpiece held at its ends and solid parts of the workpiece separated from one another by the molten zone are freely supported, while as a result of a relative displacement of the workpiece taking place parallel to the axis of the workpiece to the heat source, the melted zone gradually traverses and melts the workpiece. According to the invention, the cross section of the material crystallizing out of the molten zone by a relative displacement of the two fixed, Parts of the workpiece separated by the melted zone are regulated or balanced. By such an axial displacement of the rod parts delimiting the melted zone, which are either pulled apart or closer together, becomes a reduction or an enlargement of the cross section of the melted zone. The material crystallizes accordingly the melted zone with a smaller or a larger cross-section. This can initially a jump in volume occurring during solidification can be compensated for. Furthermore, by an analogous Acting on these measures a thick stick: to a thin and a thin stick to a thick one Rod to be remelted. The cross section of the crystallizing from the molten zone can be Material through which due to a rapid and unidirectional rotation of the entire Turn the workpiece adjusting centrifugal force further increased.
Das Verfahren nach der Erfindung läßt sich in mannigfacher Weise ausgestalten. Beispielsweise ist es möglich, statt von vorgeschmolzenem Material, z. B. einem vorgeschmolzenen Stab, von vorgesintertem Material, z. B. gesintertem Pulver, auszugehen und das Schmelzen des gesinterten Materials in der Anordnung nach der Erfindung auszuführen. Man kann-auch lediglich vorgepreßtes und mit einem flüchtigen Binder verbundenes Pulver verwenden.The method according to the invention can be implemented in a variety of ways. For example is it possible, instead of premelted material, e.g. B. a premelted rod, of presintered Material, e.g. B. sintered powder to go out and the melting of the sintered material in the Execute arrangement according to the invention. You can-also just pre-pressed and with a fleeting one Use binder-bound powder.
Um die für eine nur stellenweise Abstützung des Stabes notwendige geringe Achserstreckung der Schmelzzone herstellen zu können, ist es notwendig, die Erwärmung auf eine wohldefinierte Stelle zu konzentrieren. Gemäß einer besonderen Ausbildung des Erfindungsgedankens geschieht dies durch Einstrahlung der Schmelzwärme mittels optischer Hilfsmittel; hierzu dient zweckmäßigerweise ein halbtorusförmiger Hohlspiegel, der beispielsweise einen die Schmelzwärme ausstrahlenden glühenden Ring umgibt, welcher beispielsweise durch Hochfrequenz oder direkten Stromdurchgang geheizt ist.In order to only support the rod in places, the small axial extension of the To be able to create a melting zone, it is necessary to concentrate the heating on a well-defined point. According to a special embodiment of the inventive concept, this is done by irradiation the heat of fusion using optical aids; a semi-toroidal one is expediently used for this purpose Concave mirror, which surrounds, for example, a glowing ring radiating the heat of fusion, which is heated, for example, by high frequency or direct current passage.
ίο In der Zeichnung sind einige Ausführungsformen der Einrichtung nach der Erfindung beispielsweise dargestellt.ίο In the drawing are some embodiments the device according to the invention shown for example.
In Fig. 1 bedeutet 1 einen Wismutstab, der an seinen beiden Enden durch zwei Halterungen 2 und 3 in senkrechter Orientierung gehaltert ist. 4 ist eine ringförmige Wärmequelle, z. B. ein Glühring, der die Zone 5 des Stabes 1 durch Strahlung erhitzt und zum Schmelzen bringt. Der Pfeil 6 deutet die Vorschubrichtung des Glühringes 4 relativ zum Stab 1 an. Das heißt, es wird der Glühring allmählich senkrecht von oben nach unten bzw. die Halterungsanordnung 2, 3 mit dem Stab 1 allmählich von unten nach oben verschoben, wobei sich die Schmelzzone 5 allmählich von oben nach unten durch den Stab hindurchbewegt. Die Schmelzzone 5 ist bauchig gezeichnet, wodurch angedeutet werden soll, daß sie auf Grund der Oberflächenspannung eine gewisse Verformung der Oberfläche erfährt. Die Einrichtung nach Fig. 1 dient vorzugsweise zum Reinigen des Wismuts von Verunreinigungen nach dem an sich bekannten Verfahren. Der Durchmesser des auskristallisierenden Stabes wird dann durch eine entsprechend vorgenommene axiale Verschiebung der beiden durch die geschmolzene Zone voneinander getrennten festen Stabteile in der gewünschten Weise geregelt.In Fig. 1, 1 denotes a bismuth rod which is held at both ends by two brackets 2 and 3 in a vertical orientation. 4 is an annular heat source, e.g. B. a glow ring which heats the zone 5 of the rod 1 by radiation and melts it. The arrow 6 indicates the direction of advance of the glow ring 4 relative to the rod 1. That is, the glow ring is gradually shifted vertically from top to bottom or the holding arrangement 2, 3 with the rod 1 gradually shifted from bottom to top, the melting zone 5 gradually moving through the rod from top to bottom. The melting zone 5 is shown bulbous, which is intended to indicate that it experiences a certain deformation of the surface due to the surface tension. The device according to FIG. 1 is preferably used for cleaning the bismuth of impurities by the method known per se. The diameter of the rod which crystallizes out is then regulated in the desired manner by a corresponding axial displacement of the two solid rod parts separated from one another by the melted zone.
In Fig. 2 ist eine Ausführungsform der Erwärmungsvorrichtung für die Erzeugung der Schmelztemperatur beispielsweise dargestellt. 10 bedeutet einen Glühring, der von einem Hohlspiegel 11 umgeben ist.In Fig. 2 is an embodiment of the heating device for generating the melting temperature for example shown. 10 denotes a glow ring which is surrounded by a concave mirror 11 is.
Aus Fig. 3 ist der Strahlengang ersichtlich, der durch den halbtorusförmigen Hohlspiegel 11 erzeugt wird. Wie man sieht, entsteht kein genau definierter Brennpunkt der Strahlung, sondern ein langes scheibenförmiges Koma, welches auf der Oberfläche des Stabes eine schmale und wohl definierte Ringzone der Strahlung erzeugt.The beam path generated by the semi-torus-shaped concave mirror 11 can be seen from FIG. 3 will. As you can see, there is no precisely defined focus of the radiation, but a long, disk-shaped one Coma, which on the surface of the rod is a narrow and well-defined ring zone of the Generates radiation.
Die Einrichtung zur Durchführung des Zonenschmelzverfahrens, wie sie in den Figuren beispielsweise dargestellt ist, ist gemäß dem an sich bekannten Schmelzverfahren in einer inerten Schutzgasatmosphäre angeordnet. Noch günstiger ist es in vielen Fällen, das Verfahren unter Vakuum vorzunehmen.The facility for carrying out the zone melting process, as shown in the figures, for example, is in accordance with what is known per se Melting process arranged in an inert protective gas atmosphere. It is even cheaper in many Cases to carry out the procedure under vacuum.
Claims (13)
Deutsche Patentschrift Nr. 1 014 332.Considered publications:
German patent specification No. 1 014 332.
Priority Applications (21)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32197A DE1062431B (en) | 1953-02-14 | 1953-02-14 | Method and device for remelting elongated bodies by zone melting |
DES32193A DE1061527B (en) | 1953-02-14 | 1953-02-14 | Process for zone-wise remelting of rods and other elongated workpieces |
DES36929A DE1154073B (en) | 1953-02-14 | 1953-12-23 | Method for remelting elongated bodies, in particular rods made of semiconducting material, by zone melting |
CH334388D CH334388A (en) | 1953-02-14 | 1954-01-28 | Method for at least partial remelting of rods and other elongated bodies made of semiconducting material |
US409420A US3086856A (en) | 1953-02-14 | 1954-02-10 | Method and device for the successive zone melting and resolidifying of extremely pure substances |
US409610A US3030194A (en) | 1953-02-14 | 1954-02-11 | Processing of semiconductor devices |
FR1107076D FR1107076A (en) | 1953-02-14 | 1954-02-13 | Method and device for processing a semiconductor crystal assembly |
GB4447/54A GB775986A (en) | 1953-02-14 | 1954-02-15 | Improvements in or relating to processes and apparatus for treating semi-conductor devices |
DES44099A DE1210415B (en) | 1953-02-14 | 1955-05-26 | Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt |
CH348262D CH348262A (en) | 1953-02-14 | 1956-04-24 | Process for at least partial remelting of rods made of semiconducting material |
US586125A US2876147A (en) | 1953-02-14 | 1956-05-21 | Method of and apparatus for producing semiconductor material |
GB16312/56A GB809163A (en) | 1953-02-14 | 1956-05-25 | Improvements in or relating to zone-melting processes and apparatus for carrying outsuch processes |
FR69746D FR69746E (en) | 1953-02-14 | 1956-05-25 | Method and device for processing a semiconductor crystal assembly |
US13309A US3234012A (en) | 1953-02-14 | 1960-03-07 | Method for remelting a rod of crystallizable material by crucible-free zonemelting |
US147799A US3216805A (en) | 1953-02-14 | 1961-10-26 | Device for crucible-free zone melting |
US209016A US3234009A (en) | 1953-02-14 | 1962-07-11 | Method and device for the successive zone melting and resolidifying of extremely pure substances |
NL291972D NL291972A (en) | 1953-02-14 | 1963-04-25 | |
NL291970D NL291970A (en) | 1953-02-14 | 1963-04-25 | |
NL291970A NL120780C (en) | 1953-02-14 | 1963-04-25 | |
NL291971A NL127108C (en) | 1953-02-14 | 1963-04-25 | |
NL6601448A NL127664C (en) | 1953-02-14 | 1966-02-04 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32193A DE1061527B (en) | 1953-02-14 | 1953-02-14 | Process for zone-wise remelting of rods and other elongated workpieces |
DE1953S0036998 DE975158C (en) | 1953-12-30 | 1953-12-30 | Method and device for crucible-free zone melting of an elongated rod-shaped body |
DES44099A DE1210415B (en) | 1953-02-14 | 1955-05-26 | Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1061527B true DE1061527B (en) | 1959-07-16 |
Family
ID=27212565
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES32193A Pending DE1061527B (en) | 1953-02-14 | 1953-02-14 | Process for zone-wise remelting of rods and other elongated workpieces |
DES44099A Pending DE1210415B (en) | 1953-02-14 | 1955-05-26 | Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES44099A Pending DE1210415B (en) | 1953-02-14 | 1955-05-26 | Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt |
Country Status (6)
Country | Link |
---|---|
US (5) | US3086856A (en) |
CH (2) | CH334388A (en) |
DE (2) | DE1061527B (en) |
FR (2) | FR1107076A (en) |
GB (2) | GB775986A (en) |
NL (5) | NL127108C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE975158C (en) * | 1953-12-30 | 1961-09-14 | Siemens Ag | Method and device for crucible-free zone melting of an elongated rod-shaped body |
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-
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-
1954
- 1954-01-28 CH CH334388D patent/CH334388A/en unknown
- 1954-02-10 US US409420A patent/US3086856A/en not_active Expired - Lifetime
- 1954-02-11 US US409610A patent/US3030194A/en not_active Expired - Lifetime
- 1954-02-13 FR FR1107076D patent/FR1107076A/en not_active Expired
- 1954-02-15 GB GB4447/54A patent/GB775986A/en not_active Expired
-
1955
- 1955-05-26 DE DES44099A patent/DE1210415B/en active Pending
-
1956
- 1956-04-24 CH CH348262D patent/CH348262A/en unknown
- 1956-05-21 US US586125A patent/US2876147A/en not_active Expired - Lifetime
- 1956-05-25 FR FR69746D patent/FR69746E/en not_active Expired
- 1956-05-25 GB GB16312/56A patent/GB809163A/en not_active Expired
-
1960
- 1960-03-07 US US13309A patent/US3234012A/en not_active Expired - Lifetime
-
1961
- 1961-10-26 US US147799A patent/US3216805A/en not_active Expired - Lifetime
-
1963
- 1963-04-25 NL NL291971A patent/NL127108C/xx active
- 1963-04-25 NL NL291970A patent/NL120780C/xx active
- 1963-04-25 NL NL291972D patent/NL291972A/xx unknown
- 1963-04-25 NL NL291970D patent/NL291970A/xx unknown
-
1966
- 1966-02-04 NL NL6601448A patent/NL127664C/xx active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE975158C (en) * | 1953-12-30 | 1961-09-14 | Siemens Ag | Method and device for crucible-free zone melting of an elongated rod-shaped body |
Also Published As
Publication number | Publication date |
---|---|
NL291970A (en) | 1965-07-12 |
CH348262A (en) | 1960-08-15 |
NL127108C (en) | 1969-09-15 |
US3030194A (en) | 1962-04-17 |
FR1107076A (en) | 1955-12-28 |
US3234012A (en) | 1966-02-08 |
US3086856A (en) | 1963-04-23 |
NL291972A (en) | 1965-07-12 |
DE1210415B (en) | 1966-02-10 |
US3216805A (en) | 1965-11-09 |
FR69746E (en) | 1958-11-19 |
GB775986A (en) | 1957-05-29 |
CH334388A (en) | 1958-11-30 |
US2876147A (en) | 1959-03-03 |
NL127664C (en) | 1969-12-15 |
NL120780C (en) | 1966-05-16 |
GB809163A (en) | 1959-02-18 |
NL6601448A (en) | 1966-05-25 |
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