DE1061527B - Process for zone-wise remelting of rods and other elongated workpieces - Google Patents

Process for zone-wise remelting of rods and other elongated workpieces

Info

Publication number
DE1061527B
DE1061527B DES32193A DES0032193A DE1061527B DE 1061527 B DE1061527 B DE 1061527B DE S32193 A DES32193 A DE S32193A DE S0032193 A DES0032193 A DE S0032193A DE 1061527 B DE1061527 B DE 1061527B
Authority
DE
Germany
Prior art keywords
zone
workpiece
rod
melting
melted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES32193A
Other languages
German (de)
Inventor
Dr Heinz Henker
Dr Karl Siebertz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES32197A priority Critical patent/DE1062431B/en
Priority to DES32193A priority patent/DE1061527B/en
Priority to DES36929A priority patent/DE1154073B/en
Priority claimed from DE1953S0036998 external-priority patent/DE975158C/en
Priority to CH334388D priority patent/CH334388A/en
Priority to US409420A priority patent/US3086856A/en
Priority to US409610A priority patent/US3030194A/en
Priority to FR1107076D priority patent/FR1107076A/en
Priority to GB4447/54A priority patent/GB775986A/en
Priority to DES44099A priority patent/DE1210415B/en
Priority to CH348262D priority patent/CH348262A/en
Priority to US586125A priority patent/US2876147A/en
Priority to GB16312/56A priority patent/GB809163A/en
Priority to FR69746D priority patent/FR69746E/en
Publication of DE1061527B publication Critical patent/DE1061527B/en
Priority to US13309A priority patent/US3234012A/en
Priority to US147799A priority patent/US3216805A/en
Priority to US209016A priority patent/US3234009A/en
Priority to NL291972D priority patent/NL291972A/xx
Priority to NL291970D priority patent/NL291970A/xx
Priority to NL291970A priority patent/NL120780C/xx
Priority to NL291971A priority patent/NL127108C/xx
Priority to NL6601448A priority patent/NL127664C/xx
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26Stirring of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91Downward pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917Magnetic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1036Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Description

.MBL.MBL

Das bekannte Verfahren zum zonenweise sukzessiven Schmelzen und Erstarren eines in Form eines längserstreckten Körpers befindlichen Materials dient hauptsächlich dazu, das Material von unerwünschten Zusätzen zu reinigen. Es beruht auf der Tatsache, daß infolge des Konzentrationssprunges der Verunreinigung zwischen fester und flüssiger Phase eine Anreicherung der Verunreingung — je nach dem Vorzeichen des Konzentrationssprunges bei der jeweiligen Verunreinigung — entweder auf der flüssigen oder der festen Seite dieser Sprungstelle entsteht. Dadurch daß die Schmelzzone allmählich von einem zum anderen Ende des längserstreckten Körpers (im folgenden kurz als »Stab« bezeichnet) verschoben wird, läßt sich die Verunreinigung an das eine bzw. andere Ende des Stabes transportieren. Es ist bekannt, den Vorgang zur Erhöhung des erzielten Reinheitsgrades mehrmals zu wiederholen; es ist ferner bekannt, zur Beschleunigung des Vorganges mehrere Schmelzzonen in gewissen gleichbleibenden Abständen voneinander gleichzeitig zu verwenden. Hierbei kann entweder der Stab relativ zur Wärmequellenanordnung oder diese relativ zu jenem verschoben werden. Bei der praktischen Ausführung des Verfahrens hat sich eine Reihe von Schwierigkeiten ergeben. Es hat sich z. B. herausgestellt, daß bei der bisher angewandten horizontalen Anordnung des Stabes in einem entsprechenden Träger, beispielsweise .Schiffchen, die Schmelzzonen in sich inhomogen waren; dies war einerseits eine Folge der Sedimentionswirkung bzw. Entmischung durch verschiedenes spezifisches Gewicht und rührte andererseits daher, daß die rotationssymmetrisch um den Stab angeordnete Wärmequelle, die beispielsweise aus einem strahlenden Glühring bestand, teilweise durch das Schiffchen abgeschattet wurde, so daß die Erwärmung innerhalb der.Schmelzzone ungleichförmig war. Hierdurch entstand eine Konzentrationsinhomogenität der Verunreinigung längs der Schmelzzone in vertikaler Richtung.The known method for gradually melting and solidifying one zone by zone in the form of a Elongated body located material is mainly used to remove the material from undesired Clean additives. It is based on the fact that as a result of the jump in concentration of the impurity between the solid and liquid phase an accumulation of the impurity - depending on the sign the jump in concentration for the respective contamination - either on the liquid or the solid side of this jump point is created. As a result, the melting zone gradually moves from one to the other The end of the elongated body (hereinafter referred to as "rod" for short) is displaced, can transport the contamination to one or the other end of the rod. It is known the process to repeat several times to increase the degree of purity achieved; it is also known to accelerate the process several melting zones at certain constant distances from each other at the same time to use. Here, either the rod relative to the heat source arrangement or this relative to be moved to that. In the practical implementation of the process, a number of Difficulties arise. It has z. B. found that in the previously used horizontal Arrangement of the rod in a corresponding carrier, for example .Schiffchen, the melting zones in were inhomogeneous; on the one hand, this was a consequence of the sedimentation effect or segregation different specific gravity and, on the other hand, resulted from the fact that the rotationally symmetrical around the rod arranged heat source, which for example consisted of a radiating glow ring, partially through the boat was shaded so that the heating within the melting zone was non-uniform. This resulted in a concentration inhomogeneity of the impurity along the melting zone in a vertical direction Direction.

Durch Vermeidung dieser Inhomogenitäten läßt sich das Verfahren verbessern, insbesondere der Reinigungsvorgang beschleunigen bzw. bis zu noch höheren Reinheitsgraden treiben. Eine andere vorteilhafte Wirkung, die durch die Vermeidung der Inhomogenitäten erzielt wird, besteht darin, daß ein verbessertes Zonenschmelzverfahren zu besonders gleichmäßigen Einkristallen führt, denn durch das relative Verschieben der Schmelzzone längs des Stabes wird auf der erstarrenden Seite aus der Schmelzzone ein Kristall gebildet, wenn vor oder zu Beginn des Schmelzvorganges an der ersten Schmelzzonenstelle ein Impfkristall in bekannter Orientierung angeordnet wird.The method, in particular the cleaning process, can be improved by avoiding these inhomogeneities accelerate or drive up to even higher degrees of purity. Another beneficial one The effect that is achieved by avoiding the inhomogeneities is that an improved Zone melting process leads to particularly uniform single crystals because of the relative displacement the melting zone along the rod becomes a crystal on the solidifying side of the melting zone formed if a seed crystal is formed at the first melting zone location before or at the beginning of the melting process is arranged in a known orientation.

So wird zur Erzielung der geschilderten Vorteile der längserstreckte, zonenweise sukzessive zu schmel-Verfahren
zum zonenweisen Umschmelzen
Thus, in order to achieve the advantages described, the elongated, zone-by-zone successively becomes the melting process
for zone-wise remelting

von Stäben und anderen
langgestreckten Werkstücken
of rods and others
elongated workpieces

Anmelder:
Siemens & Halske Aktiengesellschaft,
Applicant:
Siemens & Halske Aktiengesellschaft,

Berlin und München,
München 2, Witteisbacherplatz 2
Berlin and Munich,
Munich 2, Witteisbacherplatz 2

Dr. Karl Siebertz und Dr. Heinz Henker, München, sind als Erfinder genannt wordenDr. Karl Siebertz and Dr. Heinz Henker, Munich, have been named as the inventor

zende und wieder zum Erstarren zu bringende Körper derart im Raum angeordnet und/oder erwärmt, daß innerhalb der Schmelzzone bzw. der Schmelzzonen senkrecht zu ihrer Fortschreitungsrichtung relativ zum längserstreckten Körper ein Minimum an Temperatur- und/oder Konzentrations- bzw. mechanischen Spannungsinhomogenitäten auftritt. Dies wird z. B. dadurch erzielt, daß die Längserstreckung des zu schmelzenden und wieder zu erstarrenden Körpers und damit die Fortschreitungsrichtung der Schmelzzone bzw. Zonen senkrecht orientiert ist. Die Temperaturhomogenität läßt sich auch bei einer horizontalen Anordnung dadurch erreichen, daß entweder der zu schmelzende und wieder zu erstarrende Körper nicht in einem Schiffchen, sondern in einem allseitig geschlossenen, zweckmäßig zylindrischen Rohr angeordnet ist, welches gegenüber den an sich gleichförmigen radialen Erwärmung, beispielsweise mittels eines strahlenden Glühringes, in allen Richtungen die gleiche Schirmwirkung ausübt; oder es besteht eine andere Möglichkeit darin, die Erwärmung bei Anwendung eines Schiffchens auf der von diesem abgeschatteten Seite entsprechend stärker zu bemessen. Es wurde bereits vorgeschlagen, den zu schmelzenden und wieder zur Erstarrung zu bringenden langgestreckten Körper praktisch aufrecht und nur an den beiden Enden zu haltern, wobei die Schmelzzone derart dünn in Achsrichtung des Stabes bemessen ist, daß die Oberflächenspannung des geschmolzenen Gutes ausreicht, um dieses zwischen den starren Teilen zu beiden Seiten der Schmelzzone zusammenzuhalten. Hierdurch wird erreicht, daß die Schmelzzone keinezende and again to be brought to solidification body so arranged in the room and / or heated that within the melting zone or the melting zones perpendicular to their direction of advance relative to the elongated body a minimum of temperature and / or concentration or mechanical Stress inhomogeneities occurs. This is z. B. achieved in that the longitudinal extension of the to melting and re-solidifying body and thus the direction of progress of the melting zone or zones is oriented vertically. The temperature homogeneity can also be achieved with a horizontal Achieve arrangement in that either the body to be melted and not to be solidified again arranged in a shuttle, but in an expediently cylindrical tube, which is closed on all sides is, which compared to the per se uniform radial heating, for example by means of a radiant glow ring, exerts the same shielding effect in all directions; or there is one Another possibility is the heating when using a boat on the one shaded by it Page to be dimensioned accordingly stronger. It has already been suggested that the one to be melted and again to be solidified elongated body practically upright and only to the to hold both ends, whereby the melting zone is dimensioned so thin in the axial direction of the rod, that the surface tension of the molten material is sufficient to hold it between the rigid parts to hold both sides of the melting zone together. This ensures that the melting zone does not have any

Berührung mit einer Gefäßwand hat und infolgedessen von dieser keine neuen Verunreinigungen aufnimmt.Has contact with a vessel wall and consequently does not absorb any new impurities from it.

Bei diesem sogenannten tiegellosen Zonenschmelzen mit senkrechtem Stab ist auch die vollständige Rotationssymmetrie gewahrt, was für die Bildung von Eirikristallstäben vorteilhaft ist. Beim Durchziehen der Schmelzzone durch den Stab wird gewissermaßen der erstarrende Teil aus der frei tragenden Schmelze gezogen.In this so-called crucible-free zone melting with a vertical rod, there is also complete rotational symmetry preserved, which is advantageous for the formation of egg crystal rods. When pulling through the melting zone through the rod becomes, so to speak, the solidifying part of the cantilevered melt drawn.

Werden zur Einleitung des Prozesses zwei S.täbe, von denen der eine bereits als Keim ein orientierter Einkristall ist, in mäßiger Berührung gegeneinander gehalten, so tritt, wenn das Schmelzen in der Berührungszone eingeleitet und die Schmelzzone von da in Richtung des polykristallinen Teils fortgeführt wird; die Kristallisation in der vom Keim bestimmten Orientierung ein und setzt sich über den ganzen Stab weg monokristallin fort; es wird ein Einkristall aus der frei schwebenden Schmelze gezogen. Die Schmelze hat keine Berührung mit Gefäßwänden, bleibt also beliebig rein, und eine Kristallisations-Keimwirkung durch die Wandung wird verhindert.To initiate the process, there are two bars, one of which is already an orientated germ Single crystal is held in moderate contact with one another, so when melting occurs in the contact zone initiated and the melting zone is continued from there in the direction of the polycrystalline part; the crystallization begins in the orientation determined by the nucleus and spreads over the entire rod monocrystalline fort; a single crystal is pulled from the freely floating melt. The melt has no contact with the walls of the vessel, so remains as pure as desired, and a crystallization germination effect is prevented by the wall.

Die Erfindung bezieht sich auf ein Verfahren zum zonenweisen Umschmelzen von Stäben und anderen langgestreckten Werkstücken, bei dem durch eine Wärmequelle in dem nur stellenweise, vorzugsweise an ■ seinen Enden gehalterten Werkstück eine geschmolzene Zone erzeugt und von den angrenzenden, durch die geschmolzene Zone voneinander getrennten festen Teilen des Werkstückes frei getragen wird, während infolge einer parallel zur Achse des Werkstückes erfolgenden relativen Verschiebung des Werkstückes zur Wärmequelle die geschmolzene Zone das Werkstück sukzessive durchwandet und umschmilzt. Nach der Erfindung wird der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch eine in Achsenrichtung des Werkstückes erfolgende relative Verschiebung der beiden festen, durch die geschmolzene Zone getrennten Teile des Werkstückes geregelt bzw. ausgeglichen. ■ Durch eine solche axiale Verschiebung der die geschmolzene Zone begrenzenden Stabteile, die dabei entweder auseinandergezogen bzw. aneinandergerückt werden, wird eine Verkleinerung oder eine Vergrößerung des Querschnittes der geschmolzenen Zone erreicht. Dementsprechend kristallisiert das Material der geschmolzenen Zone mit einem kleineren bzw. einem größeren Querschnitt aus. Dadurch kann zunächst ein beim Erstarren auftretender Volumsprung ausgeglichen werden. Ferner kann durch eine sinngemäße Betätigung dieser Maßnahmen ein dicker Stab :zü einem dünnen und ein dünner Stab zu einem dicken Stab umgeschmolzen werden. Dabei kann der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch die sich auf Grund einer schnellen und gleichsinnigen Rotation des gesamten Werkstückes einstellende Zentrifugalkraft weiter vergrößert wenden.The invention relates to a method for zone-wise remelting of rods and others elongated workpieces, in which by a heat source in which only in places, preferably a molten zone is created on the workpiece held at its ends and solid parts of the workpiece separated from one another by the molten zone are freely supported, while as a result of a relative displacement of the workpiece taking place parallel to the axis of the workpiece to the heat source, the melted zone gradually traverses and melts the workpiece. According to the invention, the cross section of the material crystallizing out of the molten zone by a relative displacement of the two fixed, Parts of the workpiece separated by the melted zone are regulated or balanced. By such an axial displacement of the rod parts delimiting the melted zone, which are either pulled apart or closer together, becomes a reduction or an enlargement of the cross section of the melted zone. The material crystallizes accordingly the melted zone with a smaller or a larger cross-section. This can initially a jump in volume occurring during solidification can be compensated for. Furthermore, by an analogous Acting on these measures a thick stick: to a thin and a thin stick to a thick one Rod to be remelted. The cross section of the crystallizing from the molten zone can be Material through which due to a rapid and unidirectional rotation of the entire Turn the workpiece adjusting centrifugal force further increased.

Das Verfahren nach der Erfindung läßt sich in mannigfacher Weise ausgestalten. Beispielsweise ist es möglich, statt von vorgeschmolzenem Material, z. B. einem vorgeschmolzenen Stab, von vorgesintertem Material, z. B. gesintertem Pulver, auszugehen und das Schmelzen des gesinterten Materials in der Anordnung nach der Erfindung auszuführen. Man kann-auch lediglich vorgepreßtes und mit einem flüchtigen Binder verbundenes Pulver verwenden.The method according to the invention can be implemented in a variety of ways. For example is it possible, instead of premelted material, e.g. B. a premelted rod, of presintered Material, e.g. B. sintered powder to go out and the melting of the sintered material in the Execute arrangement according to the invention. You can-also just pre-pressed and with a fleeting one Use binder-bound powder.

Um die für eine nur stellenweise Abstützung des Stabes notwendige geringe Achserstreckung der Schmelzzone herstellen zu können, ist es notwendig, die Erwärmung auf eine wohldefinierte Stelle zu konzentrieren. Gemäß einer besonderen Ausbildung des Erfindungsgedankens geschieht dies durch Einstrahlung der Schmelzwärme mittels optischer Hilfsmittel; hierzu dient zweckmäßigerweise ein halbtorusförmiger Hohlspiegel, der beispielsweise einen die Schmelzwärme ausstrahlenden glühenden Ring umgibt, welcher beispielsweise durch Hochfrequenz oder direkten Stromdurchgang geheizt ist.In order to only support the rod in places, the small axial extension of the To be able to create a melting zone, it is necessary to concentrate the heating on a well-defined point. According to a special embodiment of the inventive concept, this is done by irradiation the heat of fusion using optical aids; a semi-toroidal one is expediently used for this purpose Concave mirror, which surrounds, for example, a glowing ring radiating the heat of fusion, which is heated, for example, by high frequency or direct current passage.

ίο In der Zeichnung sind einige Ausführungsformen der Einrichtung nach der Erfindung beispielsweise dargestellt.ίο In the drawing are some embodiments the device according to the invention shown for example.

In Fig. 1 bedeutet 1 einen Wismutstab, der an seinen beiden Enden durch zwei Halterungen 2 und 3 in senkrechter Orientierung gehaltert ist. 4 ist eine ringförmige Wärmequelle, z. B. ein Glühring, der die Zone 5 des Stabes 1 durch Strahlung erhitzt und zum Schmelzen bringt. Der Pfeil 6 deutet die Vorschubrichtung des Glühringes 4 relativ zum Stab 1 an. Das heißt, es wird der Glühring allmählich senkrecht von oben nach unten bzw. die Halterungsanordnung 2, 3 mit dem Stab 1 allmählich von unten nach oben verschoben, wobei sich die Schmelzzone 5 allmählich von oben nach unten durch den Stab hindurchbewegt. Die Schmelzzone 5 ist bauchig gezeichnet, wodurch angedeutet werden soll, daß sie auf Grund der Oberflächenspannung eine gewisse Verformung der Oberfläche erfährt. Die Einrichtung nach Fig. 1 dient vorzugsweise zum Reinigen des Wismuts von Verunreinigungen nach dem an sich bekannten Verfahren. Der Durchmesser des auskristallisierenden Stabes wird dann durch eine entsprechend vorgenommene axiale Verschiebung der beiden durch die geschmolzene Zone voneinander getrennten festen Stabteile in der gewünschten Weise geregelt.In Fig. 1, 1 denotes a bismuth rod which is held at both ends by two brackets 2 and 3 in a vertical orientation. 4 is an annular heat source, e.g. B. a glow ring which heats the zone 5 of the rod 1 by radiation and melts it. The arrow 6 indicates the direction of advance of the glow ring 4 relative to the rod 1. That is, the glow ring is gradually shifted vertically from top to bottom or the holding arrangement 2, 3 with the rod 1 gradually shifted from bottom to top, the melting zone 5 gradually moving through the rod from top to bottom. The melting zone 5 is shown bulbous, which is intended to indicate that it experiences a certain deformation of the surface due to the surface tension. The device according to FIG. 1 is preferably used for cleaning the bismuth of impurities by the method known per se. The diameter of the rod which crystallizes out is then regulated in the desired manner by a corresponding axial displacement of the two solid rod parts separated from one another by the melted zone.

In Fig. 2 ist eine Ausführungsform der Erwärmungsvorrichtung für die Erzeugung der Schmelztemperatur beispielsweise dargestellt. 10 bedeutet einen Glühring, der von einem Hohlspiegel 11 umgeben ist.In Fig. 2 is an embodiment of the heating device for generating the melting temperature for example shown. 10 denotes a glow ring which is surrounded by a concave mirror 11 is.

Aus Fig. 3 ist der Strahlengang ersichtlich, der durch den halbtorusförmigen Hohlspiegel 11 erzeugt wird. Wie man sieht, entsteht kein genau definierter Brennpunkt der Strahlung, sondern ein langes scheibenförmiges Koma, welches auf der Oberfläche des Stabes eine schmale und wohl definierte Ringzone der Strahlung erzeugt.The beam path generated by the semi-torus-shaped concave mirror 11 can be seen from FIG. 3 will. As you can see, there is no precisely defined focus of the radiation, but a long, disk-shaped one Coma, which on the surface of the rod is a narrow and well-defined ring zone of the Generates radiation.

Die Einrichtung zur Durchführung des Zonenschmelzverfahrens, wie sie in den Figuren beispielsweise dargestellt ist, ist gemäß dem an sich bekannten Schmelzverfahren in einer inerten Schutzgasatmosphäre angeordnet. Noch günstiger ist es in vielen Fällen, das Verfahren unter Vakuum vorzunehmen.The facility for carrying out the zone melting process, as shown in the figures, for example, is in accordance with what is known per se Melting process arranged in an inert protective gas atmosphere. It is even cheaper in many Cases to carry out the procedure under vacuum.

Claims (13)

Patentansprüche:Patent claims: 1. Verfahren zum zonenweisen Umschmelzen von Stallen und anderen langgestreckten Werkstücken, bei dem durch eine Wärmequelle in dem nur stellenweise, vorzugsweise an seinen Enden gehalterten Werkstück eine geschmolzene Zone erzeugt und von den angrenzenden, durch die geschmolzene Zone voneinander getrennten festen Teilen des Werkstückes frei geträgen wird, während infolge einer parallel zur Achse des Werkstückes erfolgenden relativen Verschiebung des Werkstückes zur Wärmequelle die geschmolzene Zone das Werkstück sukzessive durchwandert und umschmilzt, dadurch gekennzeichnet, daß der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch eine in Achsen-1. Process for the zone-wise remelting of stalls and other elongated workpieces, in the one held by a heat source in the only in places, preferably at its ends Workpiece creates a melted zone and from the adjacent, through the melted Zone separate solid parts of the workpiece is freely carried while as a result of a relative displacement of the parallel to the axis of the workpiece Workpiece to the heat source the melted zone gradually migrates through the workpiece and remelted, characterized in that the cross section of the crystallizing from the melted zone Material through an in-axis richtung des Werkstückes erfolgende relative Verschiebung der beiden festen, durch die geschmolzene Zone getrennten Teile des Werkstückes geregelt bzw. ausgeglichen wird.direction of the workpiece, relative displacement of the two fixed, through the melted Zone separate parts of the workpiece is regulated or compensated. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Querschnitt des aus der geschmolzenen Zone auskristallisierenden Materials durch die sich auf Grund einer schnellen und gleichsinnigen Rotation des gesamten Werkstückes einstellende Zentrifugalkraft beeinflußt wird.2. The method according to claim 1, characterized in that the cross section of the melted Zone of crystallizing material through which due to a rapid and co-rotating rotation of the entire workpiece adjusting centrifugal force is influenced. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die geschmolzene Zone durch eine das Werkstück ringförmig umgebende Wärmequelle erzeugt wird.3. The method according to claim 1 or 2, characterized in that the molten zone through a heat source surrounding the workpiece in a ring shape is generated. 4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß es im Vakuum oder in einer inerten Schutzgasatmosphäre durchgeführt wird.4. The method according to any one of claims 1 to 3, characterized in that it is in a vacuum or is carried out in an inert protective gas atmosphere. 5. Verfahren nach einem der Ansprüche 1 bis.4, dadurch gekennzeichnet, daß es an einem gesinterten und/oder gepreßten, mit einem flüchtigen Bindemittel hergestellten stabförmigen Körper vorgenommen wird.5. The method according to any one of claims 1 to.4, characterized in that it is on a sintered and / or pressed rod-shaped body made with a volatile binder is made. 6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß ein Einkristall hergestellt wird.6. The method according to any one of claims 1 to 5, characterized in that a single crystal is produced will. 7. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß zur Festlegung der Kristallisation in bestimmter Orientierung Impfkristalle in den umzuschmelzenden Körper eingelagert werden.7. The method according to claim 6, characterized in that that to establish the crystallization in a certain orientation seed crystals in the bodies to be remelted are stored. 8. Verfahren nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß der zu behandelnde Körper senkrecht bzw. nahezu senkrecht angeordnet wird.8. The method according to any one of claims 1 to 7, characterized in that the to be treated Body is arranged vertically or almost vertically. 9. Verfahren nach einem der Ansprüche I,bis8, dadurch gekennzeichnet, daß der Körper in Rotation gehalten wird.9. The method according to any one of claims 1 to 8, characterized in that the body is kept rotating. 10. Verfahren nach einem der Ansprüche 1 bis 9, gekennzeichnet durch eine innerhalb der Schmelzzone ein Maximum an Temperatursymmetrie und/oder Konzentrations- bzw. mechanischer Spannungshomogenität bewirkende Anordnung bzw. Ausgestaltung der Schmelzzone bewirkende Wärmequelle.10. The method according to any one of claims 1 to 9, characterized by one within the Melting zone a maximum of temperature symmetry and / or concentration or mechanical Arrangement or configuration of the melting zone causing tension homogeneity Heat source. 11. Verfahren nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß die Erzeugung der Schmelzzone mit optischen Mitteln, beispielsweise einer die Strahlung auf eine schmale Zone des zu behandelnden Körpers konzentrierenden Hohlspiegelanordnung, vorgenommen wird.11. The method according to any one of claims 1 to 10, characterized in that the creation of the melting zone by optical means, for example one that concentrates the radiation on a narrow area of the body to be treated Concave mirror arrangement, is made. 12. Verfahren nach Anspruch 11, dadurch gekennzeichnet, daß eine ringförmige Strahlungsquelle, beispielsweise ein direkt- oder indirektgeheizter Glühring verwendet wird, der derart innerhalb eines halbtorusförmigen Reflektors angeordnet ist, daß ein scheibenförmiges Koma der Strahlung entsteht.12. The method according to claim 11, characterized in that an annular radiation source, For example, a directly or indirectly heated glow ring is used, the so is arranged within a semi-torus-shaped reflector that a disc-shaped coma of the Radiation is created. 13. Verfahren nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, daß bei senkrecht gehaltertem Stab die geschmolzene Zone von oben nach unten durch den Stab hindurchbewegt wird.13. The method according to any one of claims 1 to 12, characterized in that when held vertically Rod the melted zone is moved through the rod from top to bottom. In Betracht gezogene Druckschriften:
Deutsche Patentschrift Nr. 1 014 332.
Considered publications:
German patent specification No. 1 014 332.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
DES32193A 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces Pending DE1061527B (en)

Priority Applications (21)

Application Number Priority Date Filing Date Title
DES32197A DE1062431B (en) 1953-02-14 1953-02-14 Method and device for remelting elongated bodies by zone melting
DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DES36929A DE1154073B (en) 1953-02-14 1953-12-23 Method for remelting elongated bodies, in particular rods made of semiconducting material, by zone melting
CH334388D CH334388A (en) 1953-02-14 1954-01-28 Method for at least partial remelting of rods and other elongated bodies made of semiconducting material
US409420A US3086856A (en) 1953-02-14 1954-02-10 Method and device for the successive zone melting and resolidifying of extremely pure substances
US409610A US3030194A (en) 1953-02-14 1954-02-11 Processing of semiconductor devices
FR1107076D FR1107076A (en) 1953-02-14 1954-02-13 Method and device for processing a semiconductor crystal assembly
GB4447/54A GB775986A (en) 1953-02-14 1954-02-15 Improvements in or relating to processes and apparatus for treating semi-conductor devices
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt
CH348262D CH348262A (en) 1953-02-14 1956-04-24 Process for at least partial remelting of rods made of semiconducting material
US586125A US2876147A (en) 1953-02-14 1956-05-21 Method of and apparatus for producing semiconductor material
GB16312/56A GB809163A (en) 1953-02-14 1956-05-25 Improvements in or relating to zone-melting processes and apparatus for carrying outsuch processes
FR69746D FR69746E (en) 1953-02-14 1956-05-25 Method and device for processing a semiconductor crystal assembly
US13309A US3234012A (en) 1953-02-14 1960-03-07 Method for remelting a rod of crystallizable material by crucible-free zonemelting
US147799A US3216805A (en) 1953-02-14 1961-10-26 Device for crucible-free zone melting
US209016A US3234009A (en) 1953-02-14 1962-07-11 Method and device for the successive zone melting and resolidifying of extremely pure substances
NL291972D NL291972A (en) 1953-02-14 1963-04-25
NL291970D NL291970A (en) 1953-02-14 1963-04-25
NL291970A NL120780C (en) 1953-02-14 1963-04-25
NL291971A NL127108C (en) 1953-02-14 1963-04-25
NL6601448A NL127664C (en) 1953-02-14 1966-02-04

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DE1953S0036998 DE975158C (en) 1953-12-30 1953-12-30 Method and device for crucible-free zone melting of an elongated rod-shaped body
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

Publications (1)

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DE1061527B true DE1061527B (en) 1959-07-16

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DES32193A Pending DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DES44099A Pending DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

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DES44099A Pending DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

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US (5) US3086856A (en)
CH (2) CH334388A (en)
DE (2) DE1061527B (en)
FR (2) FR1107076A (en)
GB (2) GB775986A (en)
NL (5) NL127108C (en)

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US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body

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NL291970A (en) 1965-07-12
CH348262A (en) 1960-08-15
NL127108C (en) 1969-09-15
US3030194A (en) 1962-04-17
FR1107076A (en) 1955-12-28
US3234012A (en) 1966-02-08
US3086856A (en) 1963-04-23
NL291972A (en) 1965-07-12
DE1210415B (en) 1966-02-10
US3216805A (en) 1965-11-09
FR69746E (en) 1958-11-19
GB775986A (en) 1957-05-29
CH334388A (en) 1958-11-30
US2876147A (en) 1959-03-03
NL127664C (en) 1969-12-15
NL120780C (en) 1966-05-16
GB809163A (en) 1959-02-18
NL6601448A (en) 1966-05-25

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