CH364244A - Verfahren zur Herstellung von Halbleitereinkristallen - Google Patents

Verfahren zur Herstellung von Halbleitereinkristallen

Info

Publication number
CH364244A
CH364244A CH6954759A CH6954759A CH364244A CH 364244 A CH364244 A CH 364244A CH 6954759 A CH6954759 A CH 6954759A CH 6954759 A CH6954759 A CH 6954759A CH 364244 A CH364244 A CH 364244A
Authority
CH
Switzerland
Prior art keywords
production
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Application number
CH6954759A
Other languages
English (en)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH364244A publication Critical patent/CH364244A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
CH6954759A 1958-02-19 1959-02-13 Verfahren zur Herstellung von Halbleitereinkristallen CH364244A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (de) 1958-02-19 1958-02-19 Verfahren zur Zuechtung von Einkristallen durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
CH364244A true CH364244A (de) 1962-09-15

Family

ID=7491503

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6954759A CH364244A (de) 1958-02-19 1959-02-13 Verfahren zur Herstellung von Halbleitereinkristallen

Country Status (7)

Country Link
US (1) US3159459A (de)
BE (1) BE575837A (de)
CH (1) CH364244A (de)
DE (1) DE1094710C2 (de)
FR (1) FR1214641A (de)
GB (1) GB888148A (de)
NL (2) NL235481A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (de) * 1961-11-29 1966-05-26 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1208292B (de) * 1963-03-29 1966-01-05 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (de) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
NL168491B (de) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
BE525102A (de) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
NL234451A (de) * 1957-12-27

Also Published As

Publication number Publication date
FR1214641A (fr) 1960-04-11
DE1094710B (de) 1960-12-15
GB888148A (en) 1962-01-24
DE1094710C2 (de) 1969-02-20
NL235481A (de)
NL126240C (de)
BE575837A (fr) 1959-08-18
US3159459A (en) 1964-12-01

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