GB888148A - Improvements in or relating to the production of semi-conductor materials - Google Patents

Improvements in or relating to the production of semi-conductor materials

Info

Publication number
GB888148A
GB888148A GB4792/59A GB479259A GB888148A GB 888148 A GB888148 A GB 888148A GB 4792/59 A GB4792/59 A GB 4792/59A GB 479259 A GB479259 A GB 479259A GB 888148 A GB888148 A GB 888148A
Authority
GB
United Kingdom
Prior art keywords
rod
relating
semi
production
conductor materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4792/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB888148A publication Critical patent/GB888148A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
GB4792/59A 1958-02-19 1959-02-11 Improvements in or relating to the production of semi-conductor materials Expired GB888148A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (de) 1958-02-19 1958-02-19 Verfahren zur Zuechtung von Einkristallen durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
GB888148A true GB888148A (en) 1962-01-24

Family

ID=7491503

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4792/59A Expired GB888148A (en) 1958-02-19 1959-02-11 Improvements in or relating to the production of semi-conductor materials

Country Status (7)

Country Link
US (1) US3159459A (de)
BE (1) BE575837A (de)
CH (1) CH364244A (de)
DE (1) DE1094710C2 (de)
FR (1) FR1214641A (de)
GB (1) GB888148A (de)
NL (2) NL235481A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (de) * 1961-11-29 1966-05-26 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1208292B (de) * 1963-03-29 1966-01-05 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (de) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
BE510303A (de) * 1951-11-16
BE525102A (de) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
NL234451A (de) * 1957-12-27

Also Published As

Publication number Publication date
BE575837A (fr) 1959-08-18
US3159459A (en) 1964-12-01
DE1094710C2 (de) 1969-02-20
CH364244A (de) 1962-09-15
FR1214641A (fr) 1960-04-11
NL126240C (de)
DE1094710B (de) 1960-12-15
NL235481A (de)

Similar Documents

Publication Publication Date Title
GB888148A (en) Improvements in or relating to the production of semi-conductor materials
CA537909A (en) Method of producing junctions in semi-conductors
CA546346A (en) Methods of producing silicon of high purity
CA557775A (en) Bags formed of heat sealable materials
AU230009B2 (en) Improvements in or relating to methods of forming p-n junctions in semiconductors
AU4030558A (en) Improvements in or relating to methods of forming p-n junctions in semiconductors
AU222780B2 (en) Improvements in or relating to semiconductor devices and methods of manufacture thereof
AU225567B2 (en) Improvements in or relating to semiconductor devices and methods of manufacture thereof
AU221406B2 (en) Improvements in or relating to methods of producing silicon of high purity
AU221156B2 (en) Improvements in or relating to methods of producing silicon of high purity
CA556628A (en) Method of producing pure silicon
AU233769B2 (en) Improvements in the manufacture of pure silicon
AU230081B2 (en) Improvements in or relating tothe manufacture of semiconductor materials
AU236141B2 (en) Production of pure semiconductor material
AU3702558A (en) Improvements in or relating to semiconductor devices and methods of manufacture thereof
AU3702658A (en) Improvements in or relating to semiconductor devices and methods of manufacture thereof
AU3195157A (en) Improvements in or relating to methods of producing silicon of high purity
AU227959B2 (en) Improvements in or relating to methods and apparatus forthe manufacture of single crystals froma substance, for example a semiconductor, such as germanium or silicon
CA556585A (en) Production of elemental silicon
AU2039356A (en) Improvements in or relating to methods of forming a junction ina semiconductor
AU227894B2 (en) Manufacture of pure silicon
AU4270858A (en) Improvements in the manufacture of pure silicon
AU212454B2 (en) Improvements in or relating to methods of producing silicon of high purity
AU3614358A (en) Improvements in or relating tothe manufacture of semiconductor materials
AU4438658A (en) Production of pure semiconductor material