NL234451A - - Google Patents

Info

Publication number
NL234451A
NL234451A NL234451DA NL234451A NL 234451 A NL234451 A NL 234451A NL 234451D A NL234451D A NL 234451DA NL 234451 A NL234451 A NL 234451A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL234451A publication Critical patent/NL234451A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
NL234451D 1957-12-27 NL234451A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US705685A US2961305A (en) 1957-12-27 1957-12-27 Method of growing semiconductor crystals

Publications (1)

Publication Number Publication Date
NL234451A true NL234451A (de)

Family

ID=24834518

Family Applications (1)

Application Number Title Priority Date Filing Date
NL234451D NL234451A (de) 1957-12-27

Country Status (4)

Country Link
US (1) US2961305A (de)
DE (1) DE1207920B (de)
GB (1) GB838770A (de)
NL (1) NL234451A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL126240C (de) * 1958-02-19
US3041058A (en) * 1958-11-19 1962-06-26 Straumann Inst Ag Heat treatment apparatus
NL133150C (de) * 1959-12-23
US3279896A (en) * 1960-10-26 1966-10-18 Itt Crucible seal
NL273326A (de) * 1961-04-14
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE1519902C3 (de) * 1966-09-24 1975-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4324610A (en) * 1978-03-20 1982-04-13 Motorola, Inc. Method for the controlled melting of semiconductor bodies
DE4318184A1 (de) * 1993-06-01 1994-12-08 Wacker Chemitronic Verfahren und Vorrichtung zum Ziehen von Einkristallen
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法
US8536491B2 (en) * 2009-03-24 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Rotatable and tunable heaters for semiconductor furnace
WO2011063795A1 (de) 2009-11-24 2011-06-03 Forschungsverbund Berlin E. V. Verfahren und vorrichtung zur herstellung von einkristallen aus halbleitermaterial
DE102010040464A1 (de) 2010-09-09 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung eines versetzungsfreien einkristallinen Stabes aus Silicium
RU182737U1 (ru) * 2016-12-29 2018-08-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) Устройство для получения высокочистого монокристалла зонной плавкой
CN111115636B (zh) * 2020-01-10 2022-09-30 昆明理工大学 一种用于冶金级硅电磁悬浮处理的电磁悬浮线圈和方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
NL89230C (de) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal

Also Published As

Publication number Publication date
US2961305A (en) 1960-11-22
GB838770A (en) 1960-06-22
DE1207920B (de) 1965-12-30

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