CH442242A - Verfahren zur Herstellung von hochreinen Elementen - Google Patents

Verfahren zur Herstellung von hochreinen Elementen

Info

Publication number
CH442242A
CH442242A CH6792658A CH6792658A CH442242A CH 442242 A CH442242 A CH 442242A CH 6792658 A CH6792658 A CH 6792658A CH 6792658 A CH6792658 A CH 6792658A CH 442242 A CH442242 A CH 442242A
Authority
CH
Switzerland
Prior art keywords
purity
production
Prior art date
Application number
CH6792658A
Other languages
English (en)
Inventor
Zicht
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US70649457 priority Critical patent/US3020128A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH442242A publication Critical patent/CH442242A/de

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/003Phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/01Treating phosphate ores or other raw phosphate materials to obtain phosphorus or phosphorus compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/023Boron
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00General methods of reducing to metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00General methods of reducing to metals
    • C22B5/02Dry methods smelting of sulfides or formation of mattes
    • C22B5/16Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/13Purification
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/162Testing steps
CH6792658A 1957-12-31 1958-12-31 Verfahren zur Herstellung von hochreinen Elementen CH442242A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US70649457 US3020128A (en) 1957-12-31 1957-12-31 Method of preparing materials of high purity

Publications (1)

Publication Number Publication Date
CH442242A true CH442242A (de) 1967-08-31

Family

ID=24837848

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6792658A CH442242A (de) 1957-12-31 1958-12-31 Verfahren zur Herstellung von hochreinen Elementen

Country Status (7)

Country Link
US (1) US3020128A (de)
BE (2) BE574379A (de)
CH (1) CH442242A (de)
DE (1) DE1417172B2 (de)
FR (2) FR1172559A (de)
GB (2) GB799876A (de)
NL (1) NL101577C (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3016291A (en) * 1959-04-15 1962-01-09 Robert S Aries Pure silicon by hydrogen reduction
US3091517A (en) * 1959-11-25 1963-05-28 Texas Instruments Inc Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust
DE1232558B (de) * 1961-03-06 1967-01-19 Siemens Ag Verfahren zum Herstellen von kristallinem, insbesondere einkristallinem Bor
US3216822A (en) * 1962-02-28 1965-11-09 Wyandotte Chemicals Corp Production of niobium by vapor phase reduction of niobium pentachloride
BE632835A (de) * 1962-06-04
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
US3309845A (en) * 1964-04-10 1967-03-21 Dale M Coulson Gas-liquid contact apparatus
US3447506A (en) * 1965-07-19 1969-06-03 Mbt Corp Vapor-coating apparatus
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3516803A (en) * 1966-10-06 1970-06-23 Texas Instruments Inc Method for the purification of trichlorosilane
US3862020A (en) * 1970-12-07 1975-01-21 Dow Corning Production method for polycrystalline semiconductor bodies
US3721210A (en) * 1971-04-19 1973-03-20 Texas Instruments Inc Low volume deposition reactor
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4084024A (en) * 1975-11-10 1978-04-11 J. C. Schumacher Co. Process for the production of silicon of high purity
US4213937A (en) * 1976-09-22 1980-07-22 Texas Instruments Incorporated Silicon refinery
JPS61276975A (en) * 1985-06-03 1986-12-06 Toyo Soda Mfg Co Ltd Manufacture of extremely high purity metallic niobium
US4812167A (en) * 1987-04-24 1989-03-14 Chiyoda Corporation Process for recovering metallic gallium from gallium compound-containing waste
US5798137A (en) * 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
EP1651093B1 (de) * 2003-07-30 2016-09-07 BSH Hausgeräte GmbH Verfahren zum betreiben einer geschirrspülmaschine mit wenigstens einem teilprogrammschritt "trocknen"
JP4520947B2 (ja) * 2003-12-24 2010-08-11 三浦工業株式会社 被測定物回収装置及び被測定物回収方法
KR101217968B1 (ko) * 2006-10-09 2013-01-02 엘지전자 주식회사 건조기의 히터 제어 방법
JP5040717B2 (ja) * 2007-03-19 2012-10-03 Jnc株式会社 高純度シリコンの製造方法
EP2173658A4 (de) * 2007-08-01 2012-10-03 Boston Silicon Materials Llc Verfahren zur herstellung von hochreinem elementarem silicium
US9669378B2 (en) 2014-03-18 2017-06-06 Matheson Tri-Gas, Inc. Reduction of SiCl4 in the presence of BCl3
US20160152481A1 (en) * 2014-12-01 2016-06-02 Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) Primary distillation boron reduction

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1046043A (en) * 1909-10-27 1912-12-03 Gen Electric Method and apparatus for reducing chemical compounds.
US2142694A (en) * 1937-08-03 1939-01-03 Great Western Electro Chemical Co Process for reducing chromium compounds
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2438892A (en) * 1943-07-28 1948-04-06 Bell Telephone Labor Inc Electrical translating materials and devices and methods of making them
US2766112A (en) * 1952-11-17 1956-10-09 Heraeus Gmbh W C Production of metallic tantalum and metallic niobium from mixtures of compounds thereof
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form

Also Published As

Publication number Publication date
BE574379A (fr) 1959-04-16
FR1172559A (fr) 1959-02-12
GB799876A (en) 1958-08-13
BE553349A (de) 1900-01-01
DE1417172A1 (de) 1968-10-03
NL101577C (de) 1900-01-01
FR1229718A (fr) 1960-09-09
US3020128A (en) 1962-02-06
BE574379A1 (de)
DE1417172B2 (de) 1971-03-25
GB901269A (en) 1962-07-18

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