CH468083A - Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal - Google Patents

Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal

Info

Publication number
CH468083A
CH468083A CH196968A CH196968A CH468083A CH 468083 A CH468083 A CH 468083A CH 196968 A CH196968 A CH 196968A CH 196968 A CH196968 A CH 196968A CH 468083 A CH468083 A CH 468083A
Authority
CH
Switzerland
Prior art keywords
shape
single crystal
semiconductor material
body made
silicon single
Prior art date
Application number
CH196968A
Other languages
German (de)
Inventor
Norbert Dr Schink
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to CH196968A priority Critical patent/CH468083A/en
Priority to SE16921/68A priority patent/SE344390B/xx
Priority to FR1599490D priority patent/FR1599490A/fr
Priority to DE19691901524 priority patent/DE1901524A1/en
Priority to NL6900909A priority patent/NL6900909A/xx
Publication of CH468083A publication Critical patent/CH468083A/en
Priority to BE728098D priority patent/BE728098A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/0823Devices involving rotation of the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B23K26/125Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases of mixed gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
CH196968A 1968-02-09 1968-02-09 Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal CH468083A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH196968A CH468083A (en) 1968-02-09 1968-02-09 Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal
SE16921/68A SE344390B (en) 1968-02-09 1968-12-11
FR1599490D FR1599490A (en) 1968-02-09 1968-12-27
DE19691901524 DE1901524A1 (en) 1968-02-09 1969-01-14 Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal
NL6900909A NL6900909A (en) 1968-02-09 1969-01-20
BE728098D BE728098A (en) 1968-02-09 1969-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH196968A CH468083A (en) 1968-02-09 1968-02-09 Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal

Publications (1)

Publication Number Publication Date
CH468083A true CH468083A (en) 1969-01-31

Family

ID=4222835

Family Applications (1)

Application Number Title Priority Date Filing Date
CH196968A CH468083A (en) 1968-02-09 1968-02-09 Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal

Country Status (6)

Country Link
BE (1) BE728098A (en)
CH (1) CH468083A (en)
DE (1) DE1901524A1 (en)
FR (1) FR1599490A (en)
NL (1) NL6900909A (en)
SE (1) SE344390B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092515A (en) * 1977-04-07 1978-05-30 United Technologies Corporation Laser method of precision hole drilling
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
JPS5952037B2 (en) * 1980-12-26 1984-12-17 株式会社東芝 Laser processing equipment
US4490210A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced dry chemical etching of metals
DE3437072A1 (en) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle METHOD FOR THE PRODUCTION OF CONDUCTOR PATHS AND / OR ELECTRODES ON DIELECTRIC MATERIAL
DE3437056A1 (en) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle ETCHING PROCESS FOR BODIES MADE OF DIELECTRIC OXIDE CERAMICS OR DIELECTRIC OXIDIC (ONE) CRYSTALS
DE19827771A1 (en) * 1998-06-23 2000-01-05 Rheinzink Gmbh Connection for square roof penetrations

Also Published As

Publication number Publication date
BE728098A (en) 1969-08-07
SE344390B (en) 1972-04-10
FR1599490A (en) 1970-07-15
NL6900909A (en) 1969-08-12
DE1901524A1 (en) 1969-08-28

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