CH468083A - Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls - Google Patents

Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls

Info

Publication number
CH468083A
CH468083A CH196968A CH196968A CH468083A CH 468083 A CH468083 A CH 468083A CH 196968 A CH196968 A CH 196968A CH 196968 A CH196968 A CH 196968A CH 468083 A CH468083 A CH 468083A
Authority
CH
Switzerland
Prior art keywords
shape
single crystal
semiconductor material
body made
silicon single
Prior art date
Application number
CH196968A
Other languages
English (en)
Inventor
Norbert Dr Schink
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to CH196968A priority Critical patent/CH468083A/de
Priority to SE16921/68A priority patent/SE344390B/xx
Priority to FR1599490D priority patent/FR1599490A/fr
Priority to DE19691901524 priority patent/DE1901524A1/de
Priority to NL6900909A priority patent/NL6900909A/xx
Publication of CH468083A publication Critical patent/CH468083A/de
Priority to BE728098D priority patent/BE728098A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B23K26/125—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases of mixed gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CH196968A 1968-02-09 1968-02-09 Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls CH468083A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH196968A CH468083A (de) 1968-02-09 1968-02-09 Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls
SE16921/68A SE344390B (de) 1968-02-09 1968-12-11
FR1599490D FR1599490A (de) 1968-02-09 1968-12-27
DE19691901524 DE1901524A1 (de) 1968-02-09 1969-01-14 Verfahren zum formaendernden Bearbeiten eines kristallinen Koerpers aus Halbleitermaterial,insbesondere eines Siliziumeinkristalls
NL6900909A NL6900909A (de) 1968-02-09 1969-01-20
BE728098D BE728098A (de) 1968-02-09 1969-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH196968A CH468083A (de) 1968-02-09 1968-02-09 Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls

Publications (1)

Publication Number Publication Date
CH468083A true CH468083A (de) 1969-01-31

Family

ID=4222835

Family Applications (1)

Application Number Title Priority Date Filing Date
CH196968A CH468083A (de) 1968-02-09 1968-02-09 Verfahren zum formändernden Bearbeiten eines kristallinen Körpers aus Halbleitermaterial, insbesondere eines Siliziumeinkristalls

Country Status (6)

Country Link
BE (1) BE728098A (de)
CH (1) CH468083A (de)
DE (1) DE1901524A1 (de)
FR (1) FR1599490A (de)
NL (1) NL6900909A (de)
SE (1) SE344390B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092515A (en) * 1977-04-07 1978-05-30 United Technologies Corporation Laser method of precision hole drilling
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
JPS5952037B2 (ja) * 1980-12-26 1984-12-17 株式会社東芝 レ−ザ加工装置
US4490210A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced dry chemical etching of metals
DE3437072A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von leiterbahnen und/oder elektroden auf dielektrischem material
DE3437056A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Aetzverfahren fuer koerper aus dielektrischer oxidkeramik bzw. dielektrische oxidische (ein-)kristalle
DE19827771A1 (de) * 1998-06-23 2000-01-05 Rheinzink Gmbh Anschluß für eckige Dachdurchdringungen

Also Published As

Publication number Publication date
NL6900909A (de) 1969-08-12
DE1901524A1 (de) 1969-08-28
SE344390B (de) 1972-04-10
FR1599490A (de) 1970-07-15
BE728098A (de) 1969-08-07

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